CA1170077A - Senseur de pression a semiconducteur avec resistances inclinees - Google Patents
Senseur de pression a semiconducteur avec resistances inclineesInfo
- Publication number
- CA1170077A CA1170077A CA000411049A CA411049A CA1170077A CA 1170077 A CA1170077 A CA 1170077A CA 000411049 A CA000411049 A CA 000411049A CA 411049 A CA411049 A CA 411049A CA 1170077 A CA1170077 A CA 1170077A
- Authority
- CA
- Canada
- Prior art keywords
- strain
- diaphragm
- resistor
- ridge
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 230000004044 response Effects 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000008859 change Effects 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 210000000188 diaphragm Anatomy 0.000 description 24
- 230000008901 benefit Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- BXNANOICGRISHX-UHFFFAOYSA-N coumaphos Chemical compound CC1=C(Cl)C(=O)OC2=CC(OP(=S)(OCC)OCC)=CC=C21 BXNANOICGRISHX-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000411049A CA1170077A (fr) | 1982-09-09 | 1982-09-09 | Senseur de pression a semiconducteur avec resistances inclinees |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000411049A CA1170077A (fr) | 1982-09-09 | 1982-09-09 | Senseur de pression a semiconducteur avec resistances inclinees |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1170077A true CA1170077A (fr) | 1984-07-03 |
Family
ID=4123549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000411049A Expired CA1170077A (fr) | 1982-09-09 | 1982-09-09 | Senseur de pression a semiconducteur avec resistances inclinees |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1170077A (fr) |
-
1982
- 1982-09-09 CA CA000411049A patent/CA1170077A/fr not_active Expired
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0059539B1 (fr) | Capteur de pression | |
| US10370243B2 (en) | Pressure sensor having a bossed diaphragm | |
| KR100345645B1 (ko) | 압력 센서 | |
| CN113551812A (zh) | 一种十字梁膜应力集中微压传感器芯片及其制备方法 | |
| US20100219490A1 (en) | Semiconductor sensor and method of manufacturing the same | |
| US10221062B2 (en) | Cavity with silicon on insulator MEMS pressure sensing device with an extended shallow cross-shaped cavity | |
| CN107870050B (zh) | 具有过压保护的压力传感器隔膜 | |
| KR101232613B1 (ko) | 금속 다이아프램을 구비한 후막형 압력측정센서 및 상기 압력측정센서의 제조방법 | |
| US8567255B2 (en) | Semiconductor pressure sensor having a recess with a larger area than a planar shape of a diaphragm | |
| CN109374158B (zh) | 一种压力传感器 | |
| CN113218544A (zh) | 具有应力集中结构的微压传感器芯片及其制备方法 | |
| EP0429641A1 (fr) | Transducteur a diaphragme unique dote d'elements de detection multiple. | |
| JP2000340805A (ja) | 電子部品および製造方法 | |
| US6308575B1 (en) | Manufacturing method for the miniaturization of silicon bulk-machined pressure sensors | |
| CN113390552B (zh) | 一种压力传感器及其制备方法 | |
| JPS6016756B2 (ja) | ストレ−ンゲ−ジ式圧力測定変換器 | |
| KR101965051B1 (ko) | 스트레인 게이지 및 그를 포함하는 스트레인 센서 | |
| JP2006003100A (ja) | ピエゾ抵抗型圧力センサ | |
| JP2633124B2 (ja) | ダイアフラムセンサ | |
| JP5217163B2 (ja) | 圧力センサ | |
| US12467802B2 (en) | Membrane of a sensor with multiple deflectable sections for different ranges of a sensed force or pressure | |
| JP2603204B2 (ja) | 高感度ひずみゲージ | |
| JPS6154270B2 (fr) | ||
| JPH01236659A (ja) | 半導体圧力センサ | |
| US20250076130A1 (en) | Pressure sensing element and method of manufacture thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |