CA1201220A - Cuvette double d'epitaxie a partir d'une phase liquide - Google Patents

Cuvette double d'epitaxie a partir d'une phase liquide

Info

Publication number
CA1201220A
CA1201220A CA000448169A CA448169A CA1201220A CA 1201220 A CA1201220 A CA 1201220A CA 000448169 A CA000448169 A CA 000448169A CA 448169 A CA448169 A CA 448169A CA 1201220 A CA1201220 A CA 1201220A
Authority
CA
Canada
Prior art keywords
melt
growth
holder
supply
bins
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000448169A
Other languages
English (en)
Inventor
Mikelis N. Svilans
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lumentum Technology UK Ltd
Original Assignee
Northern Telecom Ltd
Bookham Technology PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd, Bookham Technology PLC filed Critical Northern Telecom Ltd
Priority to CA000448169A priority Critical patent/CA1201220A/fr
Application granted granted Critical
Publication of CA1201220A publication Critical patent/CA1201220A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CA000448169A 1984-02-23 1984-02-23 Cuvette double d'epitaxie a partir d'une phase liquide Expired CA1201220A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA000448169A CA1201220A (fr) 1984-02-23 1984-02-23 Cuvette double d'epitaxie a partir d'une phase liquide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA000448169A CA1201220A (fr) 1984-02-23 1984-02-23 Cuvette double d'epitaxie a partir d'une phase liquide

Publications (1)

Publication Number Publication Date
CA1201220A true CA1201220A (fr) 1986-02-25

Family

ID=4127263

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000448169A Expired CA1201220A (fr) 1984-02-23 1984-02-23 Cuvette double d'epitaxie a partir d'une phase liquide

Country Status (1)

Country Link
CA (1) CA1201220A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998053123A1 (fr) * 1997-05-21 1998-11-26 Commissariat A L'energie Atomique NACELLE D'EPITAXIE ET PROCEDE POUR DEPOT D'UNE COUCHE DE CdHgTe PAR EPITAXIE EN PHASE LIQUIDE

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998053123A1 (fr) * 1997-05-21 1998-11-26 Commissariat A L'energie Atomique NACELLE D'EPITAXIE ET PROCEDE POUR DEPOT D'UNE COUCHE DE CdHgTe PAR EPITAXIE EN PHASE LIQUIDE
FR2763608A1 (fr) * 1997-05-21 1998-11-27 Commissariat Energie Atomique Nacelle d'epitaxie pour depot d'une couche de cdhgte par epitaxie en phase liquide sur un heterosubstrat et procede de depot de cdhgte sur un heterosubstrat utilisant cette nacelle

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