CA1213375A - Dispositif semiconducteur a corps en silice amorphe - Google Patents

Dispositif semiconducteur a corps en silice amorphe

Info

Publication number: CA1213375A
Authority: CA; Canada
Prior art keywords: doped; layer; semitransparent; producing; polysilanes
Prior art date: 1981-03-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA000480130A

Other languages

English (en)

Inventor

Alan G. Macdiarmid

Zoltan J. Kiss

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Chronar Corp

Original Assignee

Chronar Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-03-11

Filing date

1985-04-25

Publication date

1986-10-28

1982-03-10 Priority claimed from CA000398016A external-priority patent/CA1187622A/fr

1985-04-25 Application filed by Chronar Corp filed Critical Chronar Corp

1985-04-25 Priority to CA000480130A priority Critical patent/CA1213375A/fr

1986-10-28 Application granted granted Critical

1986-10-28 Publication of CA1213375A publication Critical patent/CA1213375A/fr

Status Expired legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 48
229910021417 amorphous silicon Inorganic materials 0.000 title claims description 68
238000000034 method Methods 0.000 claims abstract description 61
239000000463 material Substances 0.000 claims abstract description 41
238000000354 decomposition reaction Methods 0.000 claims abstract description 35
229920000548 poly(silane) polymer Polymers 0.000 claims abstract description 34
239000007792 gaseous phase Substances 0.000 claims abstract description 10
239000000758 substrate Substances 0.000 claims description 42
239000002019 doping agent Substances 0.000 claims description 27
238000004519 manufacturing process Methods 0.000 claims description 18
230000005855 radiation Effects 0.000 claims description 16
238000000151 deposition Methods 0.000 claims description 12
239000011521 glass Substances 0.000 claims description 9
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
229910052710 silicon Inorganic materials 0.000 claims description 7
239000010703 silicon Substances 0.000 claims description 7
229910052751 metal Inorganic materials 0.000 claims description 6
239000002184 metal Substances 0.000 claims description 6
230000004888 barrier function Effects 0.000 claims description 5
OFZCMPKIAFHGRP-UHFFFAOYSA-N [GeH3][GeH2][GeH2][GeH2][GeH2][GeH3] Chemical class [GeH3][GeH2][GeH2][GeH2][GeH2][GeH3] OFZCMPKIAFHGRP-UHFFFAOYSA-N 0.000 claims description 2
PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 14
XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 12
229910001887 tin oxide Inorganic materials 0.000 claims 6
229910003437 indium oxide Inorganic materials 0.000 claims 5
229910045601 alloy Inorganic materials 0.000 claims 4
239000000956 alloy Substances 0.000 claims 4
229910000846 In alloy Inorganic materials 0.000 claims 3
239000005083 Zinc sulfide Substances 0.000 claims 3
229910052984 zinc sulfide Inorganic materials 0.000 claims 3
UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 2
DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims 2
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
238000002360 preparation method Methods 0.000 abstract description 2
239000007789 gas Substances 0.000 description 19
239000010408 film Substances 0.000 description 17
238000006243 chemical reaction Methods 0.000 description 10
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
239000008246 gaseous mixture Substances 0.000 description 7
239000000203 mixture Substances 0.000 description 7
230000008569 process Effects 0.000 description 7
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
238000005229 chemical vapour deposition Methods 0.000 description 6
230000008021 deposition Effects 0.000 description 5
230000000694 effects Effects 0.000 description 5
230000036961 partial effect Effects 0.000 description 5
239000012071 phase Substances 0.000 description 5
239000000376 reactant Substances 0.000 description 5
229910052782 aluminium Inorganic materials 0.000 description 4
238000010586 diagram Methods 0.000 description 4
150000004756 silanes Chemical group 0.000 description 4
238000004544 sputter deposition Methods 0.000 description 4
238000007738 vacuum evaporation Methods 0.000 description 4
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
229910052786 argon Inorganic materials 0.000 description 3
239000000919 ceramic Substances 0.000 description 3
239000013078 crystal Substances 0.000 description 3
230000007547 defect Effects 0.000 description 3
VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 description 3
PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
229910052732 germanium Inorganic materials 0.000 description 3
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
239000001257 hydrogen Substances 0.000 description 3
229910052739 hydrogen Inorganic materials 0.000 description 3
230000006911 nucleation Effects 0.000 description 3
238000010899 nucleation Methods 0.000 description 3
239000002245 particle Substances 0.000 description 3
229910000073 phosphorus hydride Inorganic materials 0.000 description 3
229910001220 stainless steel Inorganic materials 0.000 description 3
239000010935 stainless steel Substances 0.000 description 3
230000003068 static effect Effects 0.000 description 3
229910001339 C alloy Inorganic materials 0.000 description 2
UIQWBVPFHHQZHH-UHFFFAOYSA-N OOOOOOOOOOOOOO Chemical compound OOOOOOOOOOOOOO UIQWBVPFHHQZHH-UHFFFAOYSA-N 0.000 description 2
206010034972 Photosensitivity reaction Diseases 0.000 description 2
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
238000010521 absorption reaction Methods 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
230000008901 benefit Effects 0.000 description 2
239000000969 carrier Substances 0.000 description 2
LICVGLCXGGVLPA-UHFFFAOYSA-N disilanyl(disilanylsilyl)silane Chemical class [SiH3][SiH2][SiH2][SiH2][SiH2][SiH3] LICVGLCXGGVLPA-UHFFFAOYSA-N 0.000 description 2
238000004821 distillation Methods 0.000 description 2
230000006870 function Effects 0.000 description 2
QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 2
229910052986 germanium hydride Inorganic materials 0.000 description 2
238000010438 heat treatment Methods 0.000 description 2
239000011261 inert gas Substances 0.000 description 2
-1 lithium aluminum hydride Chemical compound 0.000 description 2
QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
229910052753 mercury Inorganic materials 0.000 description 2
VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000012986 modification Methods 0.000 description 2
229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
230000000737 periodic effect Effects 0.000 description 2
230000036211 photosensitivity Effects 0.000 description 2
239000000047 product Substances 0.000 description 2
230000009467 reduction Effects 0.000 description 2
230000002829 reductive effect Effects 0.000 description 2
230000004044 response Effects 0.000 description 2
230000003595 spectral effect Effects 0.000 description 2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
239000005953 Magnesium phosphide Substances 0.000 description 1
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
229910000831 Steel Inorganic materials 0.000 description 1
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
PZKRHHZKOQZHIO-UHFFFAOYSA-N [B].[B].[Mg] Chemical compound [B].[B].[Mg] PZKRHHZKOQZHIO-UHFFFAOYSA-N 0.000 description 1
239000002253 acid Substances 0.000 description 1
230000006978 adaptation Effects 0.000 description 1
HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
230000003466 anti-cipated effect Effects 0.000 description 1
229910052787 antimony Inorganic materials 0.000 description 1
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
239000011260 aqueous acid Substances 0.000 description 1
230000006399 behavior Effects 0.000 description 1
239000011230 binding agent Substances 0.000 description 1
LUXIMSHPDKSEDK-UHFFFAOYSA-N bis(disilanyl)silane Chemical class [SiH3][SiH2][SiH2][SiH2][SiH3] LUXIMSHPDKSEDK-UHFFFAOYSA-N 0.000 description 1
UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
229910052796 boron Inorganic materials 0.000 description 1
229910010277 boron hydride Inorganic materials 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
239000012159 carrier gas Substances 0.000 description 1
238000005234 chemical deposition Methods 0.000 description 1
239000007795 chemical reaction product Substances 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
239000011651 chromium Substances 0.000 description 1
238000002485 combustion reaction Methods 0.000 description 1
230000002860 competitive effect Effects 0.000 description 1
239000000470 constituent Substances 0.000 description 1
230000007812 deficiency Effects 0.000 description 1
125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
230000005284 excitation Effects 0.000 description 1
230000005669 field effect Effects 0.000 description 1
238000005194 fractionation Methods 0.000 description 1
VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 description 1
150000004820 halides Chemical class 0.000 description 1
239000001307 helium Substances 0.000 description 1
229910052734 helium Inorganic materials 0.000 description 1
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
150000004678 hydrides Chemical class 0.000 description 1
229910000041 hydrogen chloride Inorganic materials 0.000 description 1
IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
239000012280 lithium aluminium hydride Substances 0.000 description 1
YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
230000015654 memory Effects 0.000 description 1
229910052758 niobium Inorganic materials 0.000 description 1
239000010955 niobium Substances 0.000 description 1
GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
229910052698 phosphorus Inorganic materials 0.000 description 1
239000011574 phosphorus Substances 0.000 description 1
238000005086 pumping Methods 0.000 description 1
238000000197 pyrolysis Methods 0.000 description 1
239000010453 quartz Substances 0.000 description 1
238000005215 recombination Methods 0.000 description 1
230000006798 recombination Effects 0.000 description 1
229910052711 selenium Inorganic materials 0.000 description 1
239000011669 selenium Substances 0.000 description 1
229910000077 silane Inorganic materials 0.000 description 1
150000003376 silicon Chemical class 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
239000002210 silicon-based material Substances 0.000 description 1
229910021483 silicon-carbon alloy Inorganic materials 0.000 description 1
230000002269 spontaneous effect Effects 0.000 description 1
239000010959 steel Substances 0.000 description 1
238000006467 substitution reaction Methods 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
229910052714 tellurium Inorganic materials 0.000 description 1
PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
239000010409 thin film Substances 0.000 description 1
LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1

Landscapes

Photovoltaic Devices (AREA)

CA000480130A 1981-03-11 1985-04-25 Dispositif semiconducteur a corps en silice amorphe Expired CA1213375A (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA000480130A CA1213375A (fr)	1981-03-11	1985-04-25	Dispositif semiconducteur a corps en silice amorphe

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
US24270781A	1981-03-11	1981-03-11
US242,707		1981-03-11
CA000398016A CA1187622A (fr)	1981-03-11	1982-03-10	Dispositif semiconducteur a corps en silicone amorphe
CA000480130A CA1213375A (fr)	1981-03-11	1985-04-25	Dispositif semiconducteur a corps en silice amorphe

Related Parent Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000398016A Division CA1187622A (fr)	1981-03-11	1982-03-10	Dispositif semiconducteur a corps en silicone amorphe

Publications (1)

Publication Number	Publication Date
CA1213375A true CA1213375A (fr)	1986-10-28

Family

ID=25669605

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000480130A Expired CA1213375A (fr)	1981-03-11	1985-04-25	Dispositif semiconducteur a corps en silice amorphe

Country Status (1)

Country	Link
CA (1)	CA1213375A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7943721B2 (en)	2005-10-05	2011-05-17	Kovio, Inc.	Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions

1985
- 1985-04-25 CA CA000480130A patent/CA1213375A/fr not_active Expired

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7943721B2 (en)	2005-10-05	2011-05-17	Kovio, Inc.	Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions
US8378050B2 (en)	2005-10-05	2013-02-19	Kovio, Inc.	Linear and cross-linked high molecular weight polysilanes, polygermanes, and copolymers thereof, compositions containing the same, and methods of making and using such compounds and compositions

Legal Events

Date	Code	Title	Description
2003-10-28	MKEX	Expiry

Publication	Publication Date	Title
US4459163A (en)	1984-07-10	Amorphous semiconductor method
US5279679A (en)	1994-01-18	Multi-layered photovoltaic element having at least three unit cells
US4379943A (en)	1983-04-12	Current enhanced photovoltaic device
JP2951146B2 (ja)	1999-09-20	光起電力デバイス
CA1113594A (fr)	1981-12-01	Cellule solaire en silicium amorphe avec barriere de schottky et couche mince dopee, adjacente a la barriere metallique de schottky
EP0523919A1 (fr)	1993-01-20	Dispositif photovoltaique à multijonction et méthode de fabrication
US5024706A (en)	1991-06-18	Pin heterojunction photovoltaic elements with polycrystal AlP(H,F) semiconductor film
EP0141537A1 (fr)	1985-05-15	Cellule solaire produite à partir de matériau amorphe à structure de super-réseau
JP2006080557A (ja)	2006-03-23	高水素希釈低温プラズマ蒸着によって製造されるアモルファスシリコン系素子の向上せしめられた安定化特性
GB2124826A (en)	1984-02-22	Amorphous semiconductor materials
GB2076433A (en)	1981-12-02	P-doped silicon films and devices made therefrom
US5006180A (en)	1991-04-09	Pin heterojunction photovoltaic elements with polycrystal GaP (H,F) semiconductor film
JPS59205770A (ja)	1984-11-21	光起電力装置およびその製造方法
US5007971A (en)	1991-04-16	Pin heterojunction photovoltaic elements with polycrystal BP(H,F) semiconductor film
KR910002764B1 (ko)	1991-05-04	비결정 반도체의 제법 및 장치
US5002618A (en)	1991-03-26	Pin heterojunction photovoltaic elements with polycrystal BAs(H,F) semiconductor film
CA1245330A (fr)	1988-11-22	Dispositif retroreflechissant et systeme qui en est garni
US4396793A (en)	1983-08-02	Compensated amorphous silicon solar cell
US5002617A (en)	1991-03-26	Pin heterojunction photovoltaic elements with polycrystal AlAs(H,F) semiconductor film
US4478654A (en)	1984-10-23	Amorphous silicon carbide method
CA1187588A (fr)	1985-05-21	Dispositif pin en silicium amorphe a construction hybride
JPS6334632B2 (fr)	1988-07-11
US5278015A (en)	1994-01-11	Amorphous silicon film, its production and photo semiconductor device utilizing such a film
CA1213375A (fr)	1986-10-28	Dispositif semiconducteur a corps en silice amorphe
US11670729B2 (en)	2023-06-06	Solar cell apparatus and method for forming the same for single, tandem and heterojunction systems