CA1242789A - Reseau laser a asservissement de phase a dispositif de melange de modes - Google Patents

Reseau laser a asservissement de phase a dispositif de melange de modes

Info

Publication number: CA1242789A
Authority: CA; Canada
Prior art keywords: mode; array; phase; distance; clad
Prior art date: 1985-06-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA000501606A

Other languages

English (en)

Inventor

Donald E. Ackley

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

RCA Corp

Original Assignee

RCA Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-06-26

Filing date

1986-02-11

Publication date

1988-10-04

1986-02-11 Application filed by RCA Corp filed Critical RCA Corp

1988-10-04 Application granted granted Critical

1988-10-04 Publication of CA1242789A publication Critical patent/CA1242789A/fr

Status Expired legal-status Critical Current

Links

238000002156 mixing Methods 0.000 title claims abstract description 20
239000000758 substrate Substances 0.000 claims abstract description 11
239000004065 semiconductor Substances 0.000 claims description 10
239000000463 material Substances 0.000 claims description 8
230000008878 coupling Effects 0.000 abstract description 6
238000010168 coupling process Methods 0.000 abstract description 6
238000005859 coupling reaction Methods 0.000 abstract description 6
230000003287 optical effect Effects 0.000 abstract description 2
238000000034 method Methods 0.000 description 5
239000012071 phase Substances 0.000 description 4
229910001218 Gallium arsenide Inorganic materials 0.000 description 3
238000003491 array Methods 0.000 description 3
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
239000010931 gold Substances 0.000 description 3
229910052737 gold Inorganic materials 0.000 description 3
230000005855 radiation Effects 0.000 description 3
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
230000000873 masking effect Effects 0.000 description 2
230000010355 oscillation Effects 0.000 description 2
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
238000003486 chemical etching Methods 0.000 description 1
238000000354 decomposition reaction Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005530 etching Methods 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
239000007789 gas Substances 0.000 description 1
229910052732 germanium Inorganic materials 0.000 description 1
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
229910052738 indium Inorganic materials 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
239000007791 liquid phase Substances 0.000 description 1
238000004943 liquid phase epitaxy Methods 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
229910052759 nickel Inorganic materials 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
238000000926 separation method Methods 0.000 description 1
229910000077 silane Inorganic materials 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
238000005245 sintering Methods 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
239000010936 titanium Substances 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Landscapes

Semiconductor Lasers (AREA)

CA000501606A 1985-06-26 1986-02-11 Reseau laser a asservissement de phase a dispositif de melange de modes Expired CA1242789A (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US74875785A	1985-06-26	1985-06-26
US748,757		1985-06-26

Publications (1)

Publication Number	Publication Date
CA1242789A true CA1242789A (fr)	1988-10-04

Family

ID=25010789

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000501606A Expired CA1242789A (fr)	1985-06-26	1986-02-11	Reseau laser a asservissement de phase a dispositif de melange de modes

Country Status (1)

Country	Link
CA (1)	CA1242789A (fr)

1986
- 1986-02-11 CA CA000501606A patent/CA1242789A/fr not_active Expired

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Legal Events

Date	Code	Title	Description
2006-02-11	MKEX	Expiry