CA1242989A - Appareil et methode de controle pour la pulverisation cathodique - Google Patents
Appareil et methode de controle pour la pulverisation cathodiqueInfo
- Publication number
- CA1242989A CA1242989A CA000458138A CA458138A CA1242989A CA 1242989 A CA1242989 A CA 1242989A CA 000458138 A CA000458138 A CA 000458138A CA 458138 A CA458138 A CA 458138A CA 1242989 A CA1242989 A CA 1242989A
- Authority
- CA
- Canada
- Prior art keywords
- target
- plasma
- magnetic field
- cathode
- tendency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims abstract description 92
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 62
- 238000000151 deposition Methods 0.000 claims abstract description 77
- 230000008859 change Effects 0.000 claims abstract description 62
- 230000004044 response Effects 0.000 claims abstract description 56
- 230000008021 deposition Effects 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 31
- 238000005259 measurement Methods 0.000 claims abstract description 7
- 230000003628 erosive effect Effects 0.000 claims description 88
- 239000000758 substrate Substances 0.000 claims description 72
- 230000006870 function Effects 0.000 claims description 61
- 230000004907 flux Effects 0.000 claims description 44
- 238000009826 distribution Methods 0.000 claims description 41
- 230000008569 process Effects 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 24
- 239000011248 coating agent Substances 0.000 claims description 21
- 230000005684 electric field Effects 0.000 claims description 21
- 239000000696 magnetic material Substances 0.000 claims description 17
- 238000012544 monitoring process Methods 0.000 claims 21
- 235000008733 Citrus aurantifolia Nutrition 0.000 claims 1
- 240000006909 Tilia x europaea Species 0.000 claims 1
- 235000011941 Tilia x europaea Nutrition 0.000 claims 1
- 230000006872 improvement Effects 0.000 claims 1
- 239000004571 lime Substances 0.000 claims 1
- 230000007774 longterm Effects 0.000 claims 1
- 239000000523 sample Substances 0.000 claims 1
- AHVPOAOWHRMOBY-UHFFFAOYSA-N 2-(diethylamino)-1-[6,7-dimethoxy-1-[1-(6-methoxynaphthalen-2-yl)ethyl]-3,4-dihydro-1h-isoquinolin-2-yl]ethanone Chemical compound C1=C(OC)C=CC2=CC(C(C)C3C4=CC(OC)=C(OC)C=C4CCN3C(=O)CN(CC)CC)=CC=C21 AHVPOAOWHRMOBY-UHFFFAOYSA-N 0.000 description 42
- 239000007789 gas Substances 0.000 description 35
- 238000012545 processing Methods 0.000 description 32
- 230000015654 memory Effects 0.000 description 29
- 230000001276 controlling effect Effects 0.000 description 22
- 230000007423 decrease Effects 0.000 description 16
- 239000013077 target material Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 11
- 239000011261 inert gas Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000035699 permeability Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 125000004122 cyclic group Chemical group 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 206010011906 Death Diseases 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000036470 plasma concentration Effects 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 230000002459 sustained effect Effects 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 101150087426 Gnal gene Proteins 0.000 description 1
- 238000012369 In process control Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 235000021438 curry Nutrition 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002431 foraging effect Effects 0.000 description 1
- 238000010965 in-process control Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000000275 quality assurance Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- ZFXYFBGIUFBOJW-UHFFFAOYSA-N theophylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1NC=N2 ZFXYFBGIUFBOJW-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US51524683A | 1983-07-19 | 1983-07-19 | |
| US515,246 | 1983-07-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1242989A true CA1242989A (fr) | 1988-10-11 |
Family
ID=24050558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000458138A Expired CA1242989A (fr) | 1983-07-19 | 1984-07-04 | Appareil et methode de controle pour la pulverisation cathodique |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS6039161A (fr) |
| CA (1) | CA1242989A (fr) |
| DE (1) | DE3425659A1 (fr) |
| FR (1) | FR2549496B1 (fr) |
| GB (1) | GB2144888B (fr) |
| NL (1) | NL8402163A (fr) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3331406A1 (de) * | 1983-08-31 | 1985-03-14 | Leybold-Heraeus GmbH, 5000 Köln | Zerstaeubungskatode |
| US4595482A (en) * | 1984-05-17 | 1986-06-17 | Varian Associates, Inc. | Apparatus for and the method of controlling magnetron sputter device having separate confining magnetic fields to separate targets subject to separate discharges |
| US4875810A (en) * | 1985-10-21 | 1989-10-24 | Canon Kabushiki Kaisha | Apparatus for controlling fine particle flow |
| JPH0726204B2 (ja) * | 1986-04-16 | 1995-03-22 | 日本真空技術株式会社 | スパツタによる成膜制御装置 |
| DE3630737C1 (de) * | 1986-09-10 | 1987-11-05 | Philips & Du Pont Optical | Kathodenzerstaeubungseinrichtung mit einer Vorrichtung zur Messung eines kritischen Target-Abtrages |
| JPS63125676A (ja) * | 1986-11-13 | 1988-05-28 | Japan Aviation Electronics Ind Ltd | スパツタリング成膜法 |
| CH669609A5 (fr) * | 1986-12-23 | 1989-03-31 | Balzers Hochvakuum | |
| JP2599395B2 (ja) * | 1987-07-29 | 1997-04-09 | 三菱プレシジョン株式会社 | チューンド・ドライ・ジャイロ |
| JPH01116071A (ja) * | 1987-10-28 | 1989-05-09 | Tokyo Electron Ltd | スパッタリング装置 |
| DE10154229B4 (de) | 2001-11-07 | 2004-08-05 | Applied Films Gmbh & Co. Kg | Einrichtung für die Regelung einer Plasmaimpedanz |
| JP5850713B2 (ja) * | 2011-11-11 | 2016-02-03 | 株式会社アルバック | マグネトロンスパッタリング装置及びマグネトロンスパッタリング方法 |
| CN104213089B (zh) * | 2014-08-22 | 2016-06-29 | 京东方科技集团股份有限公司 | 磁控溅射设备及磁控溅射方法 |
| GB201714646D0 (en) * | 2017-09-12 | 2017-10-25 | Spts Technologies Ltd | Saw device and method of manufacture |
| DE102020128802B4 (de) | 2020-11-02 | 2025-03-20 | VON ARDENNE Asset GmbH & Co. KG | Verfahren, Steuervorrichtung und Speichermedium |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3956093A (en) * | 1974-12-16 | 1976-05-11 | Airco, Inc. | Planar magnetron sputtering method and apparatus |
| FR2371009A1 (fr) * | 1976-11-15 | 1978-06-09 | Commissariat Energie Atomique | Procede de controle du depot de couches par pulverisation reactive et dispositif de mise en oeuvre |
| US4166783A (en) * | 1978-04-17 | 1979-09-04 | Varian Associates, Inc. | Deposition rate regulation by computer control of sputtering systems |
| US4299678A (en) * | 1979-07-23 | 1981-11-10 | Spin Physics, Inc. | Magnetic target plate for use in magnetron sputtering of magnetic films |
| DE3047113A1 (de) * | 1980-12-13 | 1982-07-29 | Leybold-Heraeus GmbH, 5000 Köln | Katodenanordnung und regelverfahren fuer katodenzerstaeubungsanlagen mit einem magnetsystem zur erhoehung der zerstaeubungsrate |
| JPS583976A (ja) * | 1981-06-29 | 1983-01-10 | Hitachi Ltd | スパツタリングによる成膜方法及びその装置 |
| US4401539A (en) * | 1981-01-30 | 1983-08-30 | Hitachi, Ltd. | Sputtering cathode structure for sputtering apparatuses, method of controlling magnetic flux generated by said sputtering cathode structure, and method of forming films by use of said sputtering cathode structure |
| JPS5816068A (ja) * | 1981-07-22 | 1983-01-29 | Hitachi Ltd | プレ−ナマグネトロン方式のスパッタリング方法 |
| JPS5887270A (ja) * | 1981-11-18 | 1983-05-25 | Hitachi Ltd | プレ−ナマグネトロン方式のスパッタリング電極 |
-
1984
- 1984-07-04 CA CA000458138A patent/CA1242989A/fr not_active Expired
- 1984-07-06 NL NL8402163A patent/NL8402163A/nl not_active Application Discontinuation
- 1984-07-12 DE DE19843425659 patent/DE3425659A1/de not_active Ceased
- 1984-07-16 GB GB08418029A patent/GB2144888B/en not_active Expired
- 1984-07-16 JP JP14616984A patent/JPS6039161A/ja active Pending
- 1984-07-19 FR FR8411474A patent/FR2549496B1/fr not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2549496B1 (fr) | 1991-03-29 |
| DE3425659A1 (de) | 1985-01-31 |
| NL8402163A (nl) | 1985-02-18 |
| GB2144888B (en) | 1986-11-12 |
| GB8418029D0 (en) | 1984-08-22 |
| JPS6039161A (ja) | 1985-02-28 |
| GB2144888A (en) | 1985-03-13 |
| FR2549496A1 (fr) | 1985-01-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |