CA1271393A - Methode de fabrication d'un monocristal a proprietes semi-isolantes d'arseniure de gallium et d'indium - Google Patents
Methode de fabrication d'un monocristal a proprietes semi-isolantes d'arseniure de gallium et d'indiumInfo
- Publication number
- CA1271393A CA1271393A CA000492218A CA492218A CA1271393A CA 1271393 A CA1271393 A CA 1271393A CA 000492218 A CA000492218 A CA 000492218A CA 492218 A CA492218 A CA 492218A CA 1271393 A CA1271393 A CA 1271393A
- Authority
- CA
- Canada
- Prior art keywords
- single crystal
- indium
- semi
- gallium
- mass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 56
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000005245 sintering Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 18
- 229910052738 indium Inorganic materials 0.000 claims abstract description 17
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 15
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 15
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 14
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000005538 encapsulation Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 206010023204 Joint dislocation Diseases 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 4
- 239000012212 insulator Substances 0.000 abstract description 2
- 230000007547 defect Effects 0.000 description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 17
- 229910000673 Indium arsenide Inorganic materials 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000007792 addition Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241001101998 Galium Species 0.000 description 1
- 102100026933 Myelin-associated neurite-outgrowth inhibitor Human genes 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000492218A CA1271393A (fr) | 1985-10-03 | 1985-10-03 | Methode de fabrication d'un monocristal a proprietes semi-isolantes d'arseniure de gallium et d'indium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000492218A CA1271393A (fr) | 1985-10-03 | 1985-10-03 | Methode de fabrication d'un monocristal a proprietes semi-isolantes d'arseniure de gallium et d'indium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1271393A true CA1271393A (fr) | 1990-07-10 |
Family
ID=4131539
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000492218A Expired CA1271393A (fr) | 1985-10-03 | 1985-10-03 | Methode de fabrication d'un monocristal a proprietes semi-isolantes d'arseniure de gallium et d'indium |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1271393A (fr) |
-
1985
- 1985-10-03 CA CA000492218A patent/CA1271393A/fr not_active Expired
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKLA | Lapsed |