CA1278272C - Methode de generation de couches cristallines par epitaxie en phase vapeur - Google Patents

Methode de generation de couches cristallines par epitaxie en phase vapeur

Info

Publication number: CA1278272C
Authority: CA; Canada
Prior art keywords: substrate; gas; alkyl; gas stream; layer
Prior art date: 1985-11-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

CA000494754A

Other languages

English (en)

Inventor

Jean Giess

John B. Mullin

Stuart J.C. Irvine

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

UK Secretary of State for Defence

Original Assignee

UK Secretary of State for Defence

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-11-07

Filing date

1985-11-07

Publication date

1990-12-27

1985-11-07 Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence

1985-11-07 Priority to CA000494754A priority Critical patent/CA1278272C/fr

1990-12-27 Application granted granted Critical

1990-12-27 Publication of CA1278272C publication Critical patent/CA1278272C/fr

2007-12-27 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims abstract description 67
238000000927 vapour-phase epitaxy Methods 0.000 title abstract description 7
239000000758 substrate Substances 0.000 claims abstract description 107
239000007789 gas Substances 0.000 claims abstract description 73
125000000217 alkyl group Chemical group 0.000 claims abstract description 50
238000006243 chemical reaction Methods 0.000 claims abstract description 45
239000012159 carrier gas Substances 0.000 claims abstract description 25
238000000354 decomposition reaction Methods 0.000 claims abstract description 24
239000011261 inert gas Substances 0.000 claims abstract description 22
230000005670 electromagnetic radiation Effects 0.000 claims abstract description 13
230000008021 deposition Effects 0.000 claims abstract description 11
230000001678 irradiating effect Effects 0.000 claims abstract description 5
229910052753 mercury Inorganic materials 0.000 claims description 60
QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 53
230000005855 radiation Effects 0.000 claims description 35
229910004613 CdTe Inorganic materials 0.000 claims description 32
229910052734 helium Inorganic materials 0.000 claims description 29
229910052793 cadmium Inorganic materials 0.000 claims description 26
239000001307 helium Substances 0.000 claims description 26
229910052714 tellurium Inorganic materials 0.000 claims description 26
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 25
239000000203 mixture Substances 0.000 claims description 14
PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 14
229910004262 HgTe Inorganic materials 0.000 claims description 13
-1 alkyl compound Chemical class 0.000 claims description 13
BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 13
229910052739 hydrogen Inorganic materials 0.000 claims description 13
239000001257 hydrogen Substances 0.000 claims description 13
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
239000004065 semiconductor Substances 0.000 claims description 10
150000001875 compounds Chemical class 0.000 claims description 7
229910002058 ternary alloy Inorganic materials 0.000 claims description 5
239000003153 chemical reaction reagent Substances 0.000 claims description 4
238000009792 diffusion process Methods 0.000 claims description 4
150000003498 tellurium compounds Chemical class 0.000 claims description 4
238000005979 thermal decomposition reaction Methods 0.000 claims description 3
229910052711 selenium Inorganic materials 0.000 claims description 2
BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 1
239000011669 selenium Substances 0.000 claims 1
238000000151 deposition Methods 0.000 abstract description 11
230000009471 action Effects 0.000 abstract description 2
AYFVYJQAPQTCCC-GBXIJSLDSA-N L-threonine Chemical compound C[C@@H](O)[C@H](N)C(O)=O AYFVYJQAPQTCCC-GBXIJSLDSA-N 0.000 abstract 1
230000000737 periodic effect Effects 0.000 abstract 1
229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 24
MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 22
VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical group [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 description 13
ILXWFJOFKUNZJA-UHFFFAOYSA-N ethyltellanylethane Chemical group CC[Te]CC ILXWFJOFKUNZJA-UHFFFAOYSA-N 0.000 description 13
239000002019 doping agent Substances 0.000 description 11
239000000047 product Substances 0.000 description 9
239000000463 material Substances 0.000 description 7
230000006911 nucleation Effects 0.000 description 7
238000010899 nucleation Methods 0.000 description 7
239000002245 particle Substances 0.000 description 7
230000015572 biosynthetic process Effects 0.000 description 5
ATZBPOVXVPIOMR-UHFFFAOYSA-N dimethylmercury Chemical compound C[Hg]C ATZBPOVXVPIOMR-UHFFFAOYSA-N 0.000 description 5
238000006303 photolysis reaction Methods 0.000 description 5
MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
150000001335 aliphatic alkanes Chemical class 0.000 description 4
238000002955 isolation Methods 0.000 description 4
239000007788 liquid Substances 0.000 description 4
150000002894 organic compounds Chemical class 0.000 description 4
229910052799 carbon Inorganic materials 0.000 description 3
238000010438 heat treatment Methods 0.000 description 3
239000000155 melt Substances 0.000 description 3
238000002256 photodeposition Methods 0.000 description 3
230000008569 process Effects 0.000 description 3
239000000376 reactant Substances 0.000 description 3
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
229910001218 Gallium arsenide Inorganic materials 0.000 description 2
XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
229910052782 aluminium Inorganic materials 0.000 description 2
229910052785 arsenic Inorganic materials 0.000 description 2
125000004429 atom Chemical group 0.000 description 2
239000013078 crystal Substances 0.000 description 2
230000001627 detrimental effect Effects 0.000 description 2
YMUZFVVKDBZHGP-UHFFFAOYSA-N dimethyl telluride Chemical compound C[Te]C YMUZFVVKDBZHGP-UHFFFAOYSA-N 0.000 description 2
239000000428 dust Substances 0.000 description 2
230000002708 enhancing effect Effects 0.000 description 2
229910052733 gallium Inorganic materials 0.000 description 2
229930195733 hydrocarbon Natural products 0.000 description 2
150000002430 hydrocarbons Chemical class 0.000 description 2
229940100892 mercury compound Drugs 0.000 description 2
150000002731 mercury compounds Chemical class 0.000 description 2
VCEXCCILEWFFBG-UHFFFAOYSA-N mercury telluride Chemical compound [Hg]=[Te] VCEXCCILEWFFBG-UHFFFAOYSA-N 0.000 description 2
150000002902 organometallic compounds Chemical group 0.000 description 2
229910052698 phosphorus Inorganic materials 0.000 description 2
230000002165 photosensitisation Effects 0.000 description 2
230000002028 premature Effects 0.000 description 2
229920006395 saturated elastomer Polymers 0.000 description 2
239000000126 substance Substances 0.000 description 2
XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
239000002341 toxic gas Substances 0.000 description 2
HTDIUWINAKAPER-UHFFFAOYSA-N trimethylarsine Chemical compound C[As](C)C HTDIUWINAKAPER-UHFFFAOYSA-N 0.000 description 2
238000001947 vapour-phase growth Methods 0.000 description 2
WINDXPMAARBVOY-UHFFFAOYSA-N 1-butyltellanylbutane Chemical compound CCCC[Te]CCCC WINDXPMAARBVOY-UHFFFAOYSA-N 0.000 description 1
XRPHHVRIJPKDOE-UHFFFAOYSA-N CCC[Cd]CCC Chemical compound CCC[Cd]CCC XRPHHVRIJPKDOE-UHFFFAOYSA-N 0.000 description 1
DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
241000282337 Nasua nasua Species 0.000 description 1
ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
238000010521 absorption reaction Methods 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
239000004411 aluminium Substances 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
229910052787 antimony Inorganic materials 0.000 description 1
230000005587 bubbling Effects 0.000 description 1
239000006227 byproduct Substances 0.000 description 1
UJYLYGDHTIVYRI-UHFFFAOYSA-N cadmium(2+);ethane Chemical compound [Cd+2].[CH2-]C.[CH2-]C UJYLYGDHTIVYRI-UHFFFAOYSA-N 0.000 description 1
125000004432 carbon atom Chemical group C* 0.000 description 1
230000005465 channeling Effects 0.000 description 1
238000011109 contamination Methods 0.000 description 1
230000006735 deficit Effects 0.000 description 1
238000001514 detection method Methods 0.000 description 1
INTMMHZKGCDQGT-UHFFFAOYSA-N diethyldiazene Chemical compound CCN=NCC INTMMHZKGCDQGT-UHFFFAOYSA-N 0.000 description 1
238000010790 dilution Methods 0.000 description 1
239000012895 dilution Substances 0.000 description 1
230000000694 effects Effects 0.000 description 1
125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
230000008570 general process Effects 0.000 description 1
229910052732 germanium Inorganic materials 0.000 description 1
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
229910002804 graphite Inorganic materials 0.000 description 1
239000010439 graphite Substances 0.000 description 1
150000002431 hydrogen Chemical class 0.000 description 1
125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
238000005286 illumination Methods 0.000 description 1
239000012535 impurity Substances 0.000 description 1
229910052738 indium Inorganic materials 0.000 description 1
WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
238000007689 inspection Methods 0.000 description 1
229910052742 iron Inorganic materials 0.000 description 1
229910052744 lithium Inorganic materials 0.000 description 1
238000005259 measurement Methods 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
238000002156 mixing Methods 0.000 description 1
125000002524 organometallic group Chemical group 0.000 description 1
230000015843 photosynthesis, light reaction Effects 0.000 description 1
229910052700 potassium Inorganic materials 0.000 description 1
239000011591 potassium Substances 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
238000010926 purge Methods 0.000 description 1
230000009467 reduction Effects 0.000 description 1
229910052594 sapphire Inorganic materials 0.000 description 1
239000010980 sapphire Substances 0.000 description 1
238000001004 secondary ion mass spectrometry Methods 0.000 description 1
238000005204 segregation Methods 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
229910052708 sodium Inorganic materials 0.000 description 1
239000011734 sodium Substances 0.000 description 1
229910052596 spinel Inorganic materials 0.000 description 1
239000011029 spinel Substances 0.000 description 1
229910052717 sulfur Inorganic materials 0.000 description 1
238000006557 surface reaction Methods 0.000 description 1
230000007704 transition Effects 0.000 description 1
JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
239000002699 waste material Substances 0.000 description 1
229910052725 zinc Inorganic materials 0.000 description 1

CA000494754A 1985-11-07 1985-11-07 Methode de generation de couches cristallines par epitaxie en phase vapeur Expired - Lifetime CA1278272C (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA000494754A CA1278272C (fr)	1985-11-07	1985-11-07	Methode de generation de couches cristallines par epitaxie en phase vapeur

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CA000494754A CA1278272C (fr)	1985-11-07	1985-11-07	Methode de generation de couches cristallines par epitaxie en phase vapeur

Publications (1)

Publication Number	Publication Date
CA1278272C true CA1278272C (fr)	1990-12-27

Family

ID=4131815

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000494754A Expired - Lifetime CA1278272C (fr)	1985-11-07	1985-11-07	Methode de generation de couches cristallines par epitaxie en phase vapeur

Country Status (1)

Country	Link
CA (1)	CA1278272C (fr)

1985
- 1985-11-07 CA CA000494754A patent/CA1278272C/fr not_active Expired - Lifetime

Legal Events

Date	Code	Title	Description
1994-06-27	MKLA	Lapsed

Publication	Publication Date	Title
US4950621A (en)	1990-08-21	Method of growing crystalline layers by vapor phase epitaxy
US4404265A (en)	1983-09-13	Epitaxial composite and method of making
Lu et al.	1986	Epitaxial Hg1− x Cd x Te growth by low‐temperature metalorganic chemical vapor deposition
Capper et al.	2017	Epitaxial crystal growth: methods and materials
US4368098A (en)	1983-01-11	Epitaxial composite and method of making
US4650539A (en)	1987-03-17	Manufacture of cadmium mercury telluride
JPH0650744B2 (ja)	1994-06-29	カドミウム水銀テルル化物の製法
US4632711A (en)	1986-12-30	Vapor phase epitaxial growth method of zinc selenide and zinc selenide-sulphide by organometallic chemical vapor deposition
Fry et al.	1986	OMVPE growth of InP and Ga0. 47ln0. 53as using ethyldimethylindium
Tsang	1985	Chemical beam epitaxy of InGaAs
US4886683A (en)	1989-12-12	Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
US4904337A (en)	1990-02-27	Photo-enhanced pyrolytic MOCVD growth of group II-VI materials
Piotrowski et al.	2004	MOCVD growth of Hg~ 1~-~ xCd~ xTe heterostructures for uncooled infrared photodetectors
US5202283A (en)	1993-04-13	Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species
Wang et al.	1985	The growth and characterization of CdTe epitaxial layers on CdTe and InSb by metalorganic chemical vapor deposition
Irvine	1997	Metal-organic vapour phase epitaxy
CA1278272C (fr)	1990-12-27	Methode de generation de couches cristallines par epitaxie en phase vapeur
JPH01232732A (ja)	1989-09-18	半導体結晶製造方法
Shin et al.	1994	Trisdimethylaminoantimony: a new Sb source for low temperature epitaxial growth of InSb
US4487640A (en)	1984-12-11	Method for the preparation of epitaxial films of mercury cadmium telluride
US4920068A (en)	1990-04-24	Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
Williams et al.	1987	Plasma enhanced chemical vapor deposition of epitaxial mercury telluride
EP0048546B1 (fr)	1984-05-23	Etain gris semiconducteur
GB2078695A (en)	1982-01-13	Cadmium Mercury Telluride Deposition
JPH0527598B2 (fr)	1993-04-21