CA1279471C - Gaz mixtes pour la deposition en phase gazeuse de materiau semiconducteur - Google Patents

Gaz mixtes pour la deposition en phase gazeuse de materiau semiconducteur

Info

Publication number: CA1279471C
Authority: CA; Canada
Prior art keywords: mixture; fluorine; silicon; gas; disilane
Prior art date: 1985-04-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

CA000504280A

Other languages

English (en)

Inventor

James Kulman

Stanford R. Ovshinsky

Subhendu Guha

Prem Nath

Chi Chung Yang

Jeffrey Fournier

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Energy Conversion Devices Inc

Original Assignee

Energy Conversion Devices Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-04-01

Filing date

1986-03-17

Publication date

1991-01-29

1986-03-17 Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc

1986-03-17 Priority to CA000504280A priority Critical patent/CA1279471C/fr

1991-01-29 Application granted granted Critical

1991-01-29 Publication of CA1279471C publication Critical patent/CA1279471C/fr

2008-01-29 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 21
239000000203 mixture Substances 0.000 title claims description 61
239000000463 material Substances 0.000 title abstract description 12
238000007740 vapor deposition Methods 0.000 title 1
239000002243 precursor Substances 0.000 claims abstract description 34
239000000956 alloy Substances 0.000 claims abstract description 31
238000000034 method Methods 0.000 claims abstract description 10
230000008569 process Effects 0.000 claims abstract description 8
229910052731 fluorine Inorganic materials 0.000 claims description 39
239000011737 fluorine Substances 0.000 claims description 39
PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 28
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
229910052710 silicon Inorganic materials 0.000 claims description 25
239000010703 silicon Substances 0.000 claims description 25
229910045601 alloy Inorganic materials 0.000 claims description 22
229910000078 germane Inorganic materials 0.000 claims description 18
ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 13
238000000354 decomposition reaction Methods 0.000 claims description 7
239000002019 doping agent Substances 0.000 claims description 7
PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
239000008246 gaseous mixture Substances 0.000 abstract description 17
238000004519 manufacturing process Methods 0.000 abstract description 6
239000007789 gas Substances 0.000 description 62
YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 34
238000000151 deposition Methods 0.000 description 22
230000008021 deposition Effects 0.000 description 19
229910052732 germanium Inorganic materials 0.000 description 18
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 16
239000001257 hydrogen Substances 0.000 description 16
229910052739 hydrogen Inorganic materials 0.000 description 16
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 13
229910000077 silane Inorganic materials 0.000 description 13
239000010408 film Substances 0.000 description 11
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
229910052796 boron Inorganic materials 0.000 description 9
229920000548 poly(silane) polymer Polymers 0.000 description 8
229910000927 Ge alloy Inorganic materials 0.000 description 7
239000003085 diluting agent Substances 0.000 description 7
150000002431 hydrogen Chemical class 0.000 description 7
238000001782 photodegradation Methods 0.000 description 7
241000894007 species Species 0.000 description 7
230000004913 activation Effects 0.000 description 5
230000007547 defect Effects 0.000 description 5
UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 4
238000010521 absorption reaction Methods 0.000 description 4
150000001875 compounds Chemical class 0.000 description 4
-1 disilane Chemical class 0.000 description 4
238000005286 illumination Methods 0.000 description 4
229910000878 H alloy Inorganic materials 0.000 description 3
229910000676 Si alloy Inorganic materials 0.000 description 3
239000002800 charge carrier Substances 0.000 description 3
230000000694 effects Effects 0.000 description 3
125000001153 fluoro group Chemical group F* 0.000 description 3
230000009467 reduction Effects 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
229910004014 SiF4 Inorganic materials 0.000 description 2
WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
230000008859 change Effects 0.000 description 2
230000002844 continuous effect Effects 0.000 description 2
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
238000005259 measurement Methods 0.000 description 2
WKFBZNUBXWCCHG-UHFFFAOYSA-N phosphorus trifluoride Chemical class FP(F)F WKFBZNUBXWCCHG-UHFFFAOYSA-N 0.000 description 2
150000004756 silanes Chemical class 0.000 description 2
239000000758 substrate Substances 0.000 description 2
KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical class F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
229910015900 BF3 Inorganic materials 0.000 description 1
WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
241000490229 Eucephalus Species 0.000 description 1
KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
125000000205 L-threonino group Chemical group [H]OC(=O)[C@@]([H])(N([H])[*])[C@](C([H])([H])[H])([H])O[H] 0.000 description 1
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
GFRROZIJVHUSKZ-FXGMSQOLSA-N OS I Natural products C[C@@H]1O[C@@H](O[C@H]2[C@@H](O)[C@@H](CO)O[C@@H](OC[C@@H](O)[C@@H](O)[C@@H](O)CO)[C@@H]2NC(=O)C)[C@H](O)[C@H](O)[C@H]1O GFRROZIJVHUSKZ-FXGMSQOLSA-N 0.000 description 1
241001296096 Probles Species 0.000 description 1
229910007264 Si2H6 Inorganic materials 0.000 description 1
229910005096 Si3H8 Inorganic materials 0.000 description 1
229910000577 Silicon-germanium Inorganic materials 0.000 description 1
241000950638 Symphysodon discus Species 0.000 description 1
LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
238000003491 array Methods 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
229910052794 bromium Inorganic materials 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
239000003054 catalyst Substances 0.000 description 1
239000000460 chlorine Substances 0.000 description 1
229910052801 chlorine Inorganic materials 0.000 description 1
238000011109 contamination Methods 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
238000006731 degradation reaction Methods 0.000 description 1
230000006870 function Effects 0.000 description 1
QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
229910052986 germanium hydride Inorganic materials 0.000 description 1
239000011521 glass Substances 0.000 description 1
229910052736 halogen Inorganic materials 0.000 description 1
150000002367 halogens Chemical class 0.000 description 1
239000001307 helium Substances 0.000 description 1
229910052734 helium Inorganic materials 0.000 description 1
SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
230000006872 improvement Effects 0.000 description 1
238000010348 incorporation Methods 0.000 description 1
239000011261 inert gas Substances 0.000 description 1
238000012423 maintenance Methods 0.000 description 1
239000007769 metal material Substances 0.000 description 1
229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
229910052750 molybdenum Inorganic materials 0.000 description 1
239000011733 molybdenum Substances 0.000 description 1
229910052754 neon Inorganic materials 0.000 description 1
GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
239000002245 particle Substances 0.000 description 1
150000003018 phosphorus compounds Chemical class 0.000 description 1
229910000073 phosphorus hydride Inorganic materials 0.000 description 1
OBCUTHMOOONNBS-UHFFFAOYSA-N phosphorus pentafluoride Chemical compound FP(F)(F)(F)F OBCUTHMOOONNBS-UHFFFAOYSA-N 0.000 description 1
150000003254 radicals Chemical class 0.000 description 1
230000009257 reactivity Effects 0.000 description 1
238000005215 recombination Methods 0.000 description 1
230000006798 recombination Effects 0.000 description 1
IOVGROKTTNBUGK-SJCJKPOMSA-N ritodrine Chemical compound N([C@@H](C)[C@H](O)C=1C=CC(O)=CC=1)CCC1=CC=C(O)C=C1 IOVGROKTTNBUGK-SJCJKPOMSA-N 0.000 description 1
150000003377 silicon compounds Chemical class 0.000 description 1
239000002210 silicon-based material Substances 0.000 description 1
238000004611 spectroscopical analysis Methods 0.000 description 1
239000010935 stainless steel Substances 0.000 description 1
229910001220 stainless steel Inorganic materials 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
239000010409 thin film Substances 0.000 description 1
VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
229910052724 xenon Inorganic materials 0.000 description 1
FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1

Landscapes

Photovoltaic Devices (AREA)

CA000504280A 1985-04-01 1986-03-17 Gaz mixtes pour la deposition en phase gazeuse de materiau semiconducteur Expired - Lifetime CA1279471C (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA000504280A CA1279471C (fr)	1985-04-01	1986-03-17	Gaz mixtes pour la deposition en phase gazeuse de materiau semiconducteur

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US718,661		1985-04-01
CA000504280A CA1279471C (fr)	1985-04-01	1986-03-17	Gaz mixtes pour la deposition en phase gazeuse de materiau semiconducteur

Publications (1)

Publication Number	Publication Date
CA1279471C true CA1279471C (fr)	1991-01-29

Family

ID=4132687

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000504280A Expired - Lifetime CA1279471C (fr)	1985-04-01	1986-03-17	Gaz mixtes pour la deposition en phase gazeuse de materiau semiconducteur

Country Status (1)

Country	Link
CA (1)	CA1279471C (fr)

1986
- 1986-03-17 CA CA000504280A patent/CA1279471C/fr not_active Expired - Lifetime

Legal Events

Date	Code	Title	Description
2008-01-29	MKEX	Expiry

Publication	Publication Date	Title
EP0204396A1 (fr)	1986-12-10	Mélanges gazeux et procédés pour le dépôt de semi-conducteurs amorphes
EP0122778A2 (fr)	1984-10-24	Dispositifs photovoltaiques à zone interdite étroite avec augmentation de la tension en circuit ouvert
Chu et al.	1992	Films and junctions of cadmium zinc telluride
US6383898B1 (en)	2002-05-07	Method for manufacturing photoelectric conversion device
EP0070509A2 (fr)	1983-01-26	Semiconducteur amorphe et dispositif photovoltaique en silicium amorphe
US20030079771A1 (en)	2003-05-01	Stacked photovoltaic device
CA1263731A (fr)	1989-12-05	Semiconducteurs dopes au bore et methode de fabrication
EP0559141A2 (fr)	1993-09-08	Dispositif photovoltaique
EP0141537A1 (fr)	1985-05-15	Cellule solaire produite à partir de matériau amorphe à structure de super-réseau
EP0189636A1 (fr)	1986-08-06	Alliages semi-conducteurs microcristallins fluorés de type p et méthode de fabrication
US4769682A (en)	1988-09-06	Boron doped semiconductor materials and method for producing same
AU646761B2 (en)	1994-03-03	Photovoltaic device
EP0500067A2 (fr)	1992-08-26	Dispositif photovoltaique avec une région d'une couche contenant du germanium
Kim et al.	1987	Use of a carbon‐alloyed graded‐band‐gap layer at the p/i interface to improve the photocharacteristics of amorphous silicon alloyed p‐i‐n solar cells prepared by photochemical vapor deposition
EP0167323A2 (fr)	1986-01-08	Dispositifs photovoltaiques stables et leur méthode de fabrication
CA1298639C (fr)	1992-04-07	Element photovoltaique a jonction pin a couche de semiconducteur de type p ou n comportant un materiau non monocristallin contenant zn, se, te et h dans un rapport atomique de 1 a4 et un dopant, ainsi qu'une couche de semiconducteur de type i contenant un materiau non monocristallin de si(h,f)
CA1279471C (fr)	1991-01-29	Gaz mixtes pour la deposition en phase gazeuse de materiau semiconducteur
US4843451A (en)	1989-06-27	Photovoltaic device with O and N doping
JP3250583B2 (ja)	2002-01-28	光起電力素子及び発電システム
JP3250573B2 (ja)	2002-01-28	光起電力素子及びその製造方法、並びに発電システム
Yang et al.	1992	Microcrystalline Silicon in a-SI: H Based Multljunction Solar Cells
Ohnishi et al.	1983	Preparation and properties of amorphous silicon produced by a consecutive, separated reaction chamber method
JP3250574B2 (ja)	2002-01-28	光起電力素子及びその製造方法、並びに発電システム
Park et al.	1993	Improved Amorphous Silicon Solar Cells Using RPCVD
Trinh et al.	2018	Influence of doping concentration and contact geometry on the performance of interdigitated back-contact silicon heterojunction of liquid phase crystalline silicon on glass