CA1281439C - Reacteur a plasma et methode d'elimination de resines photosensibles - Google Patents

Reacteur a plasma et methode d'elimination de resines photosensibles

Info

Publication number: CA1281439C
Authority: CA; Canada
Prior art keywords: plasma; working; article; chamber; barrel
Prior art date: 1985-02-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

CA000500981A

Other languages

English (en)

Inventor

James F. Battey

Perry A. Diederich

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

PSI Star Inc

Original Assignee

PSI Star Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-02-05

Filing date

1986-02-03

Publication date

1991-03-12

1986-02-03 Application filed by PSI Star Inc filed Critical PSI Star Inc

1991-03-12 Application granted granted Critical

1991-03-12 Publication of CA1281439C publication Critical patent/CA1281439C/fr

2008-03-12 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 27
238000000034 method Methods 0.000 title claims abstract description 15
230000005684 electric field Effects 0.000 claims abstract description 32
239000000463 material Substances 0.000 claims abstract description 26
239000007789 gas Substances 0.000 claims description 54
235000012431 wafers Nutrition 0.000 claims description 36
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
239000004065 semiconductor Substances 0.000 claims description 11
235000012239 silicon dioxide Nutrition 0.000 claims description 9
239000001301 oxygen Substances 0.000 claims description 8
229910052760 oxygen Inorganic materials 0.000 claims description 8
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
229910052782 aluminium Inorganic materials 0.000 claims description 5
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
238000005530 etching Methods 0.000 claims description 5
230000003993 interaction Effects 0.000 claims description 5
229910052710 silicon Inorganic materials 0.000 claims description 5
239000010703 silicon Substances 0.000 claims description 5
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
229920005591 polysilicon Polymers 0.000 claims description 4
239000000377 silicon dioxide Substances 0.000 claims description 4
239000010409 thin film Substances 0.000 claims description 4
229910001882 dioxygen Inorganic materials 0.000 description 6
238000006243 chemical reaction Methods 0.000 description 5
239000010453 quartz Substances 0.000 description 5
229910052751 metal Inorganic materials 0.000 description 4
239000002184 metal Substances 0.000 description 4
239000006227 byproduct Substances 0.000 description 3
238000004891 communication Methods 0.000 description 3
230000008569 process Effects 0.000 description 3
241000894007 species Species 0.000 description 3
230000003245 working effect Effects 0.000 description 3
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
239000010949 copper Substances 0.000 description 2
238000013461 design Methods 0.000 description 2
230000006870 function Effects 0.000 description 2
229920000642 polymer Polymers 0.000 description 2
241000478345 Afer Species 0.000 description 1
230000009471 action Effects 0.000 description 1
230000004323 axial length Effects 0.000 description 1
238000012822 chemical development Methods 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000007812 deficiency Effects 0.000 description 1
230000007850 degeneration Effects 0.000 description 1
230000002500 effect on skin Effects 0.000 description 1
230000000694 effects Effects 0.000 description 1
230000008030 elimination Effects 0.000 description 1
238000003379 elimination reaction Methods 0.000 description 1
230000002708 enhancing effect Effects 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
238000012545 processing Methods 0.000 description 1
239000000047 product Substances 0.000 description 1
230000009993 protective function Effects 0.000 description 1
230000005855 radiation Effects 0.000 description 1
230000036647 reaction Effects 0.000 description 1
239000000126 substance Substances 0.000 description 1
239000000758 substrate Substances 0.000 description 1
238000011144 upstream manufacturing Methods 0.000 description 1
238000013022 venting Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Plasma & Fusion (AREA)
Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Electromagnetism (AREA)
Spectroscopy & Molecular Physics (AREA)
General Physics & Mathematics (AREA)
Drying Of Semiconductors (AREA)
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

CA000500981A 1985-02-05 1986-02-03 Reacteur a plasma et methode d'elimination de resines photosensibles Expired - Lifetime CA1281439C (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US69835785A	1985-02-05	1985-02-05
US698,357		1985-02-05

Publications (1)

Publication Number	Publication Date
CA1281439C true CA1281439C (fr)	1991-03-12

Family

ID=24804903

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000500981A Expired - Lifetime CA1281439C (fr)	1985-02-05	1986-02-03	Reacteur a plasma et methode d'elimination de resines photosensibles

Country Status (5)

Country	Link
JP (1)	JPS61191033A (fr)
CA (1)	CA1281439C (fr)
DE (1)	DE3603355A1 (fr)
FR (1)	FR2579059A1 (fr)
GB (1)	GB2175131B (fr)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3847652A (en) *	1972-12-08	1974-11-12	Nasa	Method of preparing water purification membranes
US4362632A (en) *	1974-08-02	1982-12-07	Lfe Corporation	Gas discharge apparatus
US4192706A (en) *	1975-01-22	1980-03-11	Tokyo Shibaura Electric Co., Ltd.	Gas-etching device
US4230515A (en) *	1978-07-27	1980-10-28	Davis & Wilder, Inc.	Plasma etching apparatus
JPS5531154A (en) *	1978-08-28	1980-03-05	Hitachi Ltd	Plasma etching apparatus
US4342901A (en) *	1980-08-11	1982-08-03	Eaton Corporation	Plasma etching electrode
DE3272083D1 (en) *	1982-03-31	1986-08-28	Ibm Deutschland	Reactor for reactive ion etching, and etching process

1986
- 1986-02-03 CA CA000500981A patent/CA1281439C/fr not_active Expired - Lifetime
- 1986-02-04 FR FR8601507A patent/FR2579059A1/fr not_active Withdrawn
- 1986-02-04 GB GB08602734A patent/GB2175131B/en not_active Expired
- 1986-02-04 DE DE19863603355 patent/DE3603355A1/de not_active Withdrawn
- 1986-02-04 JP JP2135786A patent/JPS61191033A/ja active Pending

Also Published As

Publication number	Publication date
FR2579059A1 (fr)	1986-09-19
GB2175131A (en)	1986-11-19
JPS61191033A (ja)	1986-08-25
GB2175131B (en)	1988-12-29
GB8602734D0 (en)	1986-03-12
DE3603355A1 (de)	1986-08-07

Legal Events

Date	Code	Title	Description
1993-09-14	MKLA	Lapsed

Publication	Publication Date	Title
US5453125A (en)	1995-09-26	ECR plasma source for gas abatement
EP0380119B1 (fr)	1994-07-13	Appareil de traitement par plasma micro-ondes
EP0131433A2 (fr)	1985-01-16	Appareil de traitement à plasma
EP0180020A2 (fr)	1986-05-07	Dispositif de gravure par plasma
KR870008379A (ko)	1987-09-26	반도체 웨이퍼상에 포토레지스트 박리방법
JPH03261138A (ja)	1991-11-21	半導体装置のクリーニング方法およびクリーニング装置
CA1281439C (fr)	1991-03-12	Reacteur a plasma et methode d'elimination de resines photosensibles
CN101091420B (zh)	2011-02-23	表面波激发等离子体产生装置以及表面波激发等离子体处理装置
JPS63308920A (ja)	1988-12-16	有機物質表面の改質方法
JPS61189642A (ja)	1986-08-23	プラズマ反応装置
NO942489L (no)	1995-01-06	Plasmareaktor for en avsetnings- eller etsingsprosess
JPH0722195A (ja)	1995-01-24	高密度プラズマ処理装置
JPH1187313A (ja)	1999-03-30	プラズマ処理方法
JP2700297B2 (ja)	1998-01-19	処理方法
JP2535517B2 (ja)	1996-09-18	処理方法
JPS61247032A (ja)	1986-11-04	テ−パエツチング方法
JP2511810B2 (ja)	1996-07-03	処理方法
JPH0722389A (ja)	1995-01-24	プラズマ処理装置
JP2969651B2 (ja)	1999-11-02	Ｅｃｒプラズマｃｖｄ装置
JP2929151B2 (ja)	1999-08-03	プラズマ装置
JPH07283203A (ja)	1995-10-27	表面処理装置
KR0167064B1 (ko)	1999-02-01	플라즈마 식각방법 및 장치
JPS6188528A (ja)	1986-05-06	エツチング装置
JP2598432B2 (ja)	1997-04-09	排ガス処理装置
JPH03109730A (ja)	1991-05-09	ドライエッチング方法