CA1285642C - Detecteur photoconducteur vertical - Google Patents
Detecteur photoconducteur verticalInfo
- Publication number
- CA1285642C CA1285642C CA000522942A CA522942A CA1285642C CA 1285642 C CA1285642 C CA 1285642C CA 000522942 A CA000522942 A CA 000522942A CA 522942 A CA522942 A CA 522942A CA 1285642 C CA1285642 C CA 1285642C
- Authority
- CA
- Canada
- Prior art keywords
- detector
- active region
- substrate layer
- ohmic contact
- photoconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
Landscapes
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US84533586A | 1986-03-28 | 1986-03-28 | |
| US845,335 | 1986-03-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1285642C true CA1285642C (fr) | 1991-07-02 |
Family
ID=25294993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000522942A Expired - Lifetime CA1285642C (fr) | 1986-03-28 | 1986-11-13 | Detecteur photoconducteur vertical |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH0719903B2 (fr) |
| CA (1) | CA1285642C (fr) |
| DE (1) | DE3639922A1 (fr) |
| GB (1) | GB2188480B (fr) |
| SG (1) | SG135192G (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010073814A (ja) * | 2008-09-17 | 2010-04-02 | Ngk Insulators Ltd | 受光素子および受光素子の作製方法 |
| CN111244195B (zh) * | 2020-01-16 | 2023-11-03 | 西安理工大学 | 一种微米间隙异面叉指式光电导开关 |
| US20250081635A1 (en) * | 2023-09-06 | 2025-03-06 | National Taiwan University Of Science And Technology | Light sensor and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4405915A (en) * | 1980-03-28 | 1983-09-20 | Canon Kabushiki Kaisha | Photoelectric transducing element |
| DE3104075A1 (de) * | 1981-02-06 | 1982-09-09 | Philips Patentverwaltung Gmbh, 2000 Hamburg | "photoempfindlicher halbleiterwiderstand" |
| US4507674A (en) * | 1982-06-07 | 1985-03-26 | Hughes Aircraft Company | Backside illuminated blocked impurity band infrared detector |
-
1986
- 1986-11-13 CA CA000522942A patent/CA1285642C/fr not_active Expired - Lifetime
- 1986-11-18 GB GB8627556A patent/GB2188480B/en not_active Expired - Lifetime
- 1986-11-22 DE DE19863639922 patent/DE3639922A1/de not_active Withdrawn
- 1986-11-27 JP JP61284065A patent/JPH0719903B2/ja not_active Expired - Lifetime
-
1992
- 1992-12-30 SG SG1351/92A patent/SG135192G/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0719903B2 (ja) | 1995-03-06 |
| GB8627556D0 (en) | 1986-12-17 |
| GB2188480B (en) | 1990-01-17 |
| GB2188480A (en) | 1987-09-30 |
| DE3639922A1 (de) | 1987-10-01 |
| JPS62232975A (ja) | 1987-10-13 |
| SG135192G (en) | 1993-03-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKLA | Lapsed |