CA1289267C - Structure de protection contre les effets de verrouillage et les decharges electrostatiques - Google Patents

Structure de protection contre les effets de verrouillage et les decharges electrostatiques

Info

Publication number
CA1289267C
CA1289267C CA000547801A CA547801A CA1289267C CA 1289267 C CA1289267 C CA 1289267C CA 000547801 A CA000547801 A CA 000547801A CA 547801 A CA547801 A CA 547801A CA 1289267 C CA1289267 C CA 1289267C
Authority
CA
Canada
Prior art keywords
region
substrate
well
doped
polarity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CA000547801A
Other languages
English (en)
Inventor
Colin Harris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsemi Semiconductor ULC
Original Assignee
Mitel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitel Corp filed Critical Mitel Corp
Priority to CA000547801A priority Critical patent/CA1289267C/fr
Priority to GB8816796A priority patent/GB2210197B/en
Priority to JP63229696A priority patent/JP2873008B2/ja
Priority to DE3832253A priority patent/DE3832253C2/de
Application granted granted Critical
Publication of CA1289267C publication Critical patent/CA1289267C/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CA000547801A 1987-09-24 1987-09-24 Structure de protection contre les effets de verrouillage et les decharges electrostatiques Expired - Lifetime CA1289267C (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CA000547801A CA1289267C (fr) 1987-09-24 1987-09-24 Structure de protection contre les effets de verrouillage et les decharges electrostatiques
GB8816796A GB2210197B (en) 1987-09-24 1988-07-14 Latchup and electrostatic discharge protection structure
JP63229696A JP2873008B2 (ja) 1987-09-24 1988-09-13 ラッチアップ防止および，静電放電保護装置
DE3832253A DE3832253C2 (de) 1987-09-24 1988-09-22 Latchup- und Entladungsschutzeinrichtung für einen integrierten CMOS Schaltkreis

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA000547801A CA1289267C (fr) 1987-09-24 1987-09-24 Structure de protection contre les effets de verrouillage et les decharges electrostatiques

Publications (1)

Publication Number Publication Date
CA1289267C true CA1289267C (fr) 1991-09-17

Family

ID=4136515

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000547801A Expired - Lifetime CA1289267C (fr) 1987-09-24 1987-09-24 Structure de protection contre les effets de verrouillage et les decharges electrostatiques

Country Status (4)

Country Link
JP (1) JP2873008B2 (fr)
CA (1) CA1289267C (fr)
DE (1) DE3832253C2 (fr)
GB (1) GB2210197B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH039502U (fr) * 1989-06-12 1991-01-29
FR2649830B1 (fr) * 1989-07-13 1994-05-27 Sgs Thomson Microelectronics Structure de circuit integre cmos protege contre les decharges electrostatiques
US5212618A (en) * 1990-05-03 1993-05-18 Linear Technology Corporation Electrostatic discharge clamp using vertical NPN transistor
DE10026742B4 (de) * 2000-05-30 2007-11-22 Infineon Technologies Ag In beide Richtungen sperrendes Halbleiterschaltelement
US6583476B1 (en) * 2002-06-28 2003-06-24 Micrel, Inc. Electrostatic discharge protection for integrated semiconductor devices using channel stop field plates

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5869124A (ja) * 1981-10-20 1983-04-25 Toshiba Corp 半導体集積回路

Also Published As

Publication number Publication date
GB2210197B (en) 1990-12-19
JP2873008B2 (ja) 1999-03-24
JPH01106464A (ja) 1989-04-24
DE3832253A1 (de) 1989-04-27
GB2210197A (en) 1989-06-01
DE3832253C2 (de) 2000-07-13
GB8816796D0 (en) 1988-08-17

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