CA1299287C - Dispositif de stockage de donnees utilisant un support d'enregistrement a changement de phase reversible par simple superposition et methode de superpositon - Google Patents

Dispositif de stockage de donnees utilisant un support d'enregistrement a changement de phase reversible par simple superposition et methode de superpositon

Info

Publication number: CA1299287C
Authority: CA; Canada
Prior art keywords: phase change; change material; data storage; telluride; layers
Prior art date: 1987-07-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

CA000568331A

Other languages

English (en)

Inventor

David Strand

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Energy Conversion Devices Inc

Original Assignee

Energy Conversion Devices Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-07-20

Filing date

1988-06-01

Publication date

1992-04-21

1987-07-20 Priority claimed from US07/075,502 external-priority patent/US4924436A/en

1988-06-01 Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc

1992-04-21 Application granted granted Critical

1992-04-21 Publication of CA1299287C publication Critical patent/CA1299287C/fr

2009-04-21 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

238000013500 data storage Methods 0.000 title claims abstract description 63
230000008859 change Effects 0.000 title claims abstract description 26
238000000034 method Methods 0.000 title claims abstract description 15
230000002441 reversible effect Effects 0.000 title claims description 4
239000012782 phase change material Substances 0.000 claims description 59
238000002425 crystallisation Methods 0.000 claims description 31
230000008025 crystallization Effects 0.000 claims description 31
238000001816 cooling Methods 0.000 claims description 14
238000010438 heat treatment Methods 0.000 claims description 13
229910052787 antimony Inorganic materials 0.000 claims description 12
239000000203 mixture Substances 0.000 claims description 10
229910052785 arsenic Inorganic materials 0.000 claims description 8
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 7
239000006104 solid solution Substances 0.000 claims description 6
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
229910052797 bismuth Inorganic materials 0.000 claims description 4
JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
150000003346 selenoethers Chemical class 0.000 claims 1
230000003287 optical effect Effects 0.000 abstract description 22
239000000463 material Substances 0.000 description 31
239000000758 substrate Substances 0.000 description 15
239000011232 storage material Substances 0.000 description 9
-1 chalcogenide compound Chemical class 0.000 description 8
238000010521 absorption reaction Methods 0.000 description 6
150000004770 chalcogenides Chemical class 0.000 description 6
239000010408 film Substances 0.000 description 6
239000007787 solid Substances 0.000 description 6
238000004017 vitrification Methods 0.000 description 6
230000009102 absorption Effects 0.000 description 5
230000004888 barrier function Effects 0.000 description 5
150000004771 selenides Chemical class 0.000 description 5
238000013479 data entry Methods 0.000 description 4
238000000151 deposition Methods 0.000 description 4
238000002310 reflectometry Methods 0.000 description 4
238000004544 sputter deposition Methods 0.000 description 4
229910052714 tellurium Inorganic materials 0.000 description 4
230000008901 benefit Effects 0.000 description 3
150000001875 compounds Chemical class 0.000 description 3
230000008021 deposition Effects 0.000 description 3
239000008393 encapsulating agent Substances 0.000 description 3
230000006870 function Effects 0.000 description 3
YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 3
230000008018 melting Effects 0.000 description 3
238000002844 melting Methods 0.000 description 3
238000001579 optical reflectometry Methods 0.000 description 3
PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 3
239000004033 plastic Substances 0.000 description 3
229920003023 plastic Polymers 0.000 description 3
229910052711 selenium Inorganic materials 0.000 description 3
239000011669 selenium Substances 0.000 description 3
XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 3
PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
230000009466 transformation Effects 0.000 description 3
229910017629 Sb2Te3 Inorganic materials 0.000 description 2
BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
229910052581 Si3N4 Inorganic materials 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
238000002679 ablation Methods 0.000 description 2
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
230000015556 catabolic process Effects 0.000 description 2
229910052798 chalcogen Inorganic materials 0.000 description 2
150000001787 chalcogens Chemical class 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
238000006731 degradation reaction Methods 0.000 description 2
239000003989 dielectric material Substances 0.000 description 2
230000008020 evaporation Effects 0.000 description 2
238000001704 evaporation Methods 0.000 description 2
230000006911 nucleation Effects 0.000 description 2
238000010899 nucleation Methods 0.000 description 2
229910052760 oxygen Inorganic materials 0.000 description 2
239000001301 oxygen Substances 0.000 description 2
230000008569 process Effects 0.000 description 2
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
238000003860 storage Methods 0.000 description 2
101100101585 Mus musculus Ubqln4 gene Proteins 0.000 description 1
NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
239000000853 adhesive Substances 0.000 description 1
230000001070 adhesive effect Effects 0.000 description 1
239000000956 alloy Substances 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
239000006117 anti-reflective coating Substances 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
230000007812 deficiency Effects 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000007789 gas Substances 0.000 description 1
229910052732 germanium Inorganic materials 0.000 description 1
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
IWTIUUVUEKAHRM-UHFFFAOYSA-N germanium tin Chemical compound [Ge].[Sn] IWTIUUVUEKAHRM-UHFFFAOYSA-N 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
238000009413 insulation Methods 0.000 description 1
239000012774 insulation material Substances 0.000 description 1
238000002955 isolation Methods 0.000 description 1
239000013028 medium composition Substances 0.000 description 1
VOVZXURTCKPRDQ-CQSZACIVSA-N n-[4-[chloro(difluoro)methoxy]phenyl]-6-[(3r)-3-hydroxypyrrolidin-1-yl]-5-(1h-pyrazol-5-yl)pyridine-3-carboxamide Chemical compound C1[C@H](O)CCN1C1=NC=C(C(=O)NC=2C=CC(OC(F)(F)Cl)=CC=2)C=C1C1=CC=NN1 VOVZXURTCKPRDQ-CQSZACIVSA-N 0.000 description 1
238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
229920000058 polyacrylate Polymers 0.000 description 1
229920000642 polymer Polymers 0.000 description 1
239000004926 polymethyl methacrylate Substances 0.000 description 1
238000010791 quenching Methods 0.000 description 1
230000000171 quenching effect Effects 0.000 description 1
238000005546 reactive sputtering Methods 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
238000000926 separation method Methods 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1
238000010583 slow cooling Methods 0.000 description 1
238000002207 thermal evaporation Methods 0.000 description 1
239000010409 thin film Substances 0.000 description 1
238000012876 topography Methods 0.000 description 1

Landscapes

Thermal Transfer Or Thermal Recording In General (AREA)

CA000568331A 1987-07-20 1988-06-01 Dispositif de stockage de donnees utilisant un support d'enregistrement a changement de phase reversible par simple superposition et methode de superpositon Expired - Lifetime CA1299287C (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US07/075,502 US4924436A (en)	1987-06-22	1987-07-20	Data storage device having a phase change memory medium reversible by direct overwrite and method of direct overwrite
US075,502		1987-07-20

Publications (1)

Publication Number	Publication Date
CA1299287C true CA1299287C (fr)	1992-04-21

Family

ID=22126183

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000568331A Expired - Lifetime CA1299287C (fr)	1987-07-20	1988-06-01	Dispositif de stockage de donnees utilisant un support d'enregistrement a changement de phase reversible par simple superposition et methode de superpositon

Country Status (1)

Country	Link
CA (1)	CA1299287C (fr)

1988
- 1988-06-01 CA CA000568331A patent/CA1299287C/fr not_active Expired - Lifetime

Legal Events

Date	Code	Title	Description
2009-04-21	MKLA	Lapsed
2012-12-05	MKEC	Expiry (correction)

Publication	Publication Date	Title
EP0296716B1 (fr)	1995-02-01	Dispositif de mémorisation de données avec support mémoire à chargement de phase réversible par surimpression directe et méthode de surimpression directe
CA1299286C (fr)	1992-04-21	Dispositif de stockage de donnees a support d'enregistrement a changement de phase reversible par simple superposition
Yamada	1996	Erasable phase-change optical materials
CA1244943A (fr)	1988-11-15	Dispositif de stockage de donnees optique
US5194363A (en)	1993-03-16	Optical recording medium and production process for the medium
US6011757A (en)	2000-01-04	Optical recording media having increased erasability
CA2061187C (fr)	1998-11-17	Materiau de memoire optique pouvant changer d'etat et dispositif utilisant ce materiau
EP0784316B1 (fr)	2002-11-27	Supports d'enregistrement optiques et unités d'enregistrement et de reproduction d'information
US4737934A (en)	1988-04-12	Data storage device and system having an optically non transmissive chalcogenide layer
CA1245763A (fr)	1988-11-29	Materiau modifiable en phase
US5191565A (en)	1993-03-02	Optical information recording medium
US4744055A (en)	1988-05-10	Erasure means and data storage system incorporating improved erasure means
US20030165111A1 (en)	2003-09-04	Phase change data storage device for multi-level recording
US4860274A (en)	1989-08-22	Information storage medium and method of erasing information
CA1268251A (fr)	1990-04-24	Dispositif et systeme de stockage de donnees
CA1299287C (fr)	1992-04-21	Dispositif de stockage de donnees utilisant un support d'enregistrement a changement de phase reversible par simple superposition et methode de superpositon
US4667309A (en)	1987-05-19	Erasure means
AKiyama et al.	1995	New disk structure for million cycle overwritable phase change optical disk
JPS63167440A (ja)	1988-07-11	情報を記録もしくは記録及び消去する方法
CA2370836A1 (fr)	2000-11-02	Supports d'enregistrement optique avec possibilites d'effacement ameliorees
JPH06150375A (ja)	1994-05-31	光学的記録用媒体およびこれを用いた記録再生方法
JP2000222776A (ja)	2000-08-11	光記録媒体
JPH03101989A (ja)	1991-04-26	光記録媒体
JPH054453A (ja)	1993-01-14	光記録媒体
JPH0482779A (ja)	1992-03-16	光記録媒体