CA1307062C - Methode et structure de fabrication de matrices de transistors en couches minces pour afficheurs a cristaux liquides - Google Patents

Methode et structure de fabrication de matrices de transistors en couches minces pour afficheurs a cristaux liquides

Info

Publication number: CA1307062C
Authority: CA; Canada
Prior art keywords: layer; disposed; aluminum; gate; insulative
Prior art date: 1987-11-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

CA000568390A

Other languages

English (en)

Inventor

Harold George Parks

William Weidman Piper

George Edward Possin

Donald Earl Castleberry

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

General Electric Co

Original Assignee

General Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-11-30

Filing date

1988-06-02

Publication date

1992-09-01

1988-06-02 Application filed by General Electric Co filed Critical General Electric Co

1992-09-01 Application granted granted Critical

1992-09-01 Publication of CA1307062C publication Critical patent/CA1307062C/fr

2009-09-01 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims abstract description 54
230000008569 process Effects 0.000 title claims abstract description 45
239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 32
239000010409 thin film Substances 0.000 title claims abstract description 20
239000011159 matrix material Substances 0.000 title claims abstract description 10
239000010410 layer Substances 0.000 claims abstract description 108
229910052782 aluminium Inorganic materials 0.000 claims abstract description 54
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 54
239000000463 material Substances 0.000 claims abstract description 44
229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 39
238000004519 manufacturing process Methods 0.000 claims abstract description 32
AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims abstract description 23
239000007772 electrode material Substances 0.000 claims abstract description 12
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 11
239000010936 titanium Substances 0.000 claims abstract description 11
229910052719 titanium Inorganic materials 0.000 claims abstract description 11
239000004020 conductor Substances 0.000 claims abstract description 6
239000000758 substrate Substances 0.000 claims description 28
238000001465 metallisation Methods 0.000 claims description 22
230000005669 field effect Effects 0.000 claims description 21
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
229910052710 silicon Inorganic materials 0.000 claims description 16
239000010703 silicon Substances 0.000 claims description 16
229910052581 Si3N4 Inorganic materials 0.000 claims description 14
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
239000011248 coating agent Substances 0.000 claims description 12
238000000576 coating method Methods 0.000 claims description 12
238000000059 patterning Methods 0.000 claims description 10
238000009413 insulation Methods 0.000 claims description 9
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
229910052750 molybdenum Inorganic materials 0.000 claims description 7
239000011733 molybdenum Substances 0.000 claims description 7
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
239000004065 semiconductor Substances 0.000 claims description 6
238000002161 passivation Methods 0.000 claims description 5
229910052751 metal Inorganic materials 0.000 claims description 4
239000002184 metal Substances 0.000 claims description 4
238000004544 sputter deposition Methods 0.000 claims description 4
238000005566 electron beam evaporation Methods 0.000 claims description 3
238000001020 plasma etching Methods 0.000 claims description 3
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
238000005530 etching Methods 0.000 claims description 2
239000000377 silicon dioxide Substances 0.000 claims description 2
235000012239 silicon dioxide Nutrition 0.000 claims description 2
230000001681 protective effect Effects 0.000 claims 6
QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
229910017604 nitric acid Inorganic materials 0.000 claims 1
239000011241 protective layer Substances 0.000 claims 1
238000007740 vapor deposition Methods 0.000 claims 1
238000001039 wet etching Methods 0.000 claims 1
235000010210 aluminium Nutrition 0.000 description 29
230000000873 masking effect Effects 0.000 description 10
238000000151 deposition Methods 0.000 description 9
230000008021 deposition Effects 0.000 description 9
238000012545 processing Methods 0.000 description 6
230000000694 effects Effects 0.000 description 5
230000003287 optical effect Effects 0.000 description 5
230000015572 biosynthetic process Effects 0.000 description 3
235000013351 cheese Nutrition 0.000 description 3
230000001747 exhibiting effect Effects 0.000 description 3
238000005755 formation reaction Methods 0.000 description 3
239000011521 glass Substances 0.000 description 3
150000004767 nitrides Chemical class 0.000 description 3
239000002210 silicon-based material Substances 0.000 description 3
230000000007 visual effect Effects 0.000 description 3
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
230000015556 catabolic process Effects 0.000 description 2
230000008859 change Effects 0.000 description 2
238000006731 degradation reaction Methods 0.000 description 2
238000010586 diagram Methods 0.000 description 2
239000000203 mixture Substances 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
229910052760 oxygen Inorganic materials 0.000 description 2
239000001301 oxygen Substances 0.000 description 2
229910052814 silicon oxide Inorganic materials 0.000 description 2
238000004381 surface treatment Methods 0.000 description 2
UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
238000000637 aluminium metallisation Methods 0.000 description 1
239000007864 aqueous solution Substances 0.000 description 1
238000004380 ashing Methods 0.000 description 1
239000003990 capacitor Substances 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
239000000470 constituent Substances 0.000 description 1
238000011109 contamination Methods 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
230000009977 dual effect Effects 0.000 description 1
239000000975 dye Substances 0.000 description 1
230000002708 enhancing effect Effects 0.000 description 1
239000010408 film Substances 0.000 description 1
238000005984 hydrogenation reaction Methods 0.000 description 1
238000010348 incorporation Methods 0.000 description 1
RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
238000011835 investigation Methods 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
239000007788 liquid Substances 0.000 description 1
238000012423 maintenance Methods 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
229910044991 metal oxide Inorganic materials 0.000 description 1
150000004706 metal oxides Chemical class 0.000 description 1
230000008520 organization Effects 0.000 description 1
230000003647 oxidation Effects 0.000 description 1
238000007254 oxidation reaction Methods 0.000 description 1
238000003672 processing method Methods 0.000 description 1
238000011160 research Methods 0.000 description 1
229910021332 silicide Inorganic materials 0.000 description 1
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
239000000243 solution Substances 0.000 description 1
239000000126 substance Substances 0.000 description 1
239000012780 transparent material Substances 0.000 description 1
210000003462 vein Anatomy 0.000 description 1

Landscapes

Liquid Crystal (AREA)
Thin Film Transistor (AREA)

CA000568390A 1987-11-30 1988-06-02 Methode et structure de fabrication de matrices de transistors en couches minces pour afficheurs a cristaux liquides Expired - Lifetime CA1307062C (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US12702487A	1987-11-30	1987-11-30
US127,024		1987-11-30

Publications (1)

Publication Number	Publication Date
CA1307062C true CA1307062C (fr)	1992-09-01

Family

ID=22427935

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA000568390A Expired - Lifetime CA1307062C (fr)	1987-11-30	1988-06-02	Methode et structure de fabrication de matrices de transistors en couches minces pour afficheurs a cristaux liquides

Country Status (1)

Country	Link
CA (1)	CA1307062C (fr)

1988
- 1988-06-02 CA CA000568390A patent/CA1307062C/fr not_active Expired - Lifetime

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Legal Events

Date	Code	Title	Description
2000-09-01	MKLA	Lapsed