CA1310433C - Non-rectifying contacts to iii-v semiconductors - Google Patents

Non-rectifying contacts to iii-v semiconductors

Info

Publication number
CA1310433C
CA1310433C CA000540407A CA540407A CA1310433C CA 1310433 C CA1310433 C CA 1310433C CA 000540407 A CA000540407 A CA 000540407A CA 540407 A CA540407 A CA 540407A CA 1310433 C CA1310433 C CA 1310433C
Authority
CA
Canada
Prior art keywords
region
nickel
equal
composition
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CA000540407A
Other languages
English (en)
French (fr)
Inventor
Amiram Appelbaum
Murray Robbins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of CA1310433C publication Critical patent/CA1310433C/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
CA000540407A 1986-06-24 1987-06-23 Non-rectifying contacts to iii-v semiconductors Expired - Lifetime CA1310433C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US87807786A 1986-06-24 1986-06-24
US878,077 1986-06-24

Publications (1)

Publication Number Publication Date
CA1310433C true CA1310433C (en) 1992-11-17

Family

ID=25371327

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000540407A Expired - Lifetime CA1310433C (en) 1986-06-24 1987-06-23 Non-rectifying contacts to iii-v semiconductors

Country Status (4)

Country Link
EP (1) EP0272303A1 (de)
JP (1) JPS63503583A (de)
CA (1) CA1310433C (de)
WO (1) WO1988000392A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5011792A (en) * 1990-02-12 1991-04-30 At&T Bell Laboratories Method of making ohmic resistance WSb, contacts to III-V semiconductor materials
JP3654037B2 (ja) 1999-03-25 2005-06-02 住友電気工業株式会社 オーミック電極とその製造方法、および半導体装置
US6881983B2 (en) 2002-02-25 2005-04-19 Kopin Corporation Efficient light emitting diodes and lasers
US6911079B2 (en) * 2002-04-19 2005-06-28 Kopin Corporation Method for reducing the resistivity of p-type II-VI and III-V semiconductors
US6847052B2 (en) 2002-06-17 2005-01-25 Kopin Corporation Light-emitting diode device geometry
US7002180B2 (en) 2002-06-28 2006-02-21 Kopin Corporation Bonding pad for gallium nitride-based light-emitting device
US6734091B2 (en) 2002-06-28 2004-05-11 Kopin Corporation Electrode for p-type gallium nitride-based semiconductors
US6955985B2 (en) 2002-06-28 2005-10-18 Kopin Corporation Domain epitaxy for thin film growth
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US7122841B2 (en) 2003-06-04 2006-10-17 Kopin Corporation Bonding pad for gallium nitride-based light-emitting devices
CN107578994B (zh) 2011-11-23 2020-10-30 阿科恩科技公司 通过插入界面原子单层改进与iv族半导体的金属接触
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
DE112017005855T5 (de) 2016-11-18 2019-08-01 Acorn Technologies, Inc. Nanodrahttransistor mit Source und Drain induziert durch elektrische Kontakte mit negativer Schottky-Barrierenhöhe
FR3061354B1 (fr) * 2016-12-22 2021-06-11 Commissariat Energie Atomique Procede de realisation de composant comprenant des materiaux iii-v et des contacts compatibles de filiere silicium

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4186410A (en) * 1978-06-27 1980-01-29 Bell Telephone Laboratories, Incorporated Nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors
JPH0789556B2 (ja) * 1986-01-13 1995-09-27 株式会社東芝 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP0272303A1 (de) 1988-06-29
WO1988000392A1 (en) 1988-01-14
JPS63503583A (ja) 1988-12-22

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