CA1333426C - Dispositifs de diffraction de rayons x obtenus par epitaxie de couches atomiques - Google Patents

Dispositifs de diffraction de rayons x obtenus par epitaxie de couches atomiques

Info

Publication number: CA1333426C
Authority: CA; Canada
Prior art keywords: layer; layers; substrate; pair; thickness
Prior art date: 1989-08-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CA 612969

Other languages

English (en)

Inventor

James Meyers Thorne

James Kevin Shurtleff

Raymond Theodore Perkins

David D. Allred

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Brigham Young University

Original Assignee

Brigham Young University

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-08-11

Filing date

1989-09-25

Publication date

1994-12-06

1989-09-25 Application filed by Brigham Young University filed Critical Brigham Young University

1994-12-06 Application granted granted Critical

1994-12-06 Publication of CA1333426C publication Critical patent/CA1333426C/fr

2011-12-06 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

238000003877 atomic layer epitaxy Methods 0.000 title claims description 28
239000000758 substrate Substances 0.000 claims abstract description 56
239000000463 material Substances 0.000 claims abstract description 55
238000000034 method Methods 0.000 claims description 52
PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 7
229910052980 cadmium sulfide Inorganic materials 0.000 claims description 7
WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 4
FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 4
PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 4
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
229910052732 germanium Inorganic materials 0.000 claims description 3
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 2
239000010445 mica Substances 0.000 claims description 2
229910052618 mica group Inorganic materials 0.000 claims description 2
239000011780 sodium chloride Substances 0.000 claims description 2
OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 2
239000000470 constituent Substances 0.000 claims 3
239000005083 Zinc sulfide Substances 0.000 claims 1
229910021419 crystalline silicon Inorganic materials 0.000 claims 1
229910052984 zinc sulfide Inorganic materials 0.000 claims 1
DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims 1
239000010410 layer Substances 0.000 description 109
239000002356 single layer Substances 0.000 description 17
239000007789 gas Substances 0.000 description 15
125000004429 atom Chemical group 0.000 description 11
150000001450 anions Chemical class 0.000 description 9
150000001875 compounds Chemical class 0.000 description 8
150000001768 cations Chemical class 0.000 description 7
238000000151 deposition Methods 0.000 description 7
230000005855 radiation Effects 0.000 description 7
230000008021 deposition Effects 0.000 description 6
238000005229 chemical vapour deposition Methods 0.000 description 5
239000013078 crystal Substances 0.000 description 5
HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 5
238000002441 X-ray diffraction Methods 0.000 description 4
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
238000010276 construction Methods 0.000 description 4
238000004519 manufacturing process Methods 0.000 description 4
229910052751 metal Inorganic materials 0.000 description 4
239000002184 metal Substances 0.000 description 4
230000037361 pathway Effects 0.000 description 4
239000007787 solid Substances 0.000 description 4
BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 3
230000005670 electromagnetic radiation Effects 0.000 description 3
238000001451 molecular beam epitaxy Methods 0.000 description 3
230000003287 optical effect Effects 0.000 description 3
238000005289 physical deposition Methods 0.000 description 3
229910000058 selane Inorganic materials 0.000 description 3
-1 selenium hydride Chemical class 0.000 description 3
239000010703 silicon Substances 0.000 description 3
238000004544 sputter deposition Methods 0.000 description 3
239000011701 zinc Substances 0.000 description 3
229910052725 zinc Inorganic materials 0.000 description 3
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
229910052582 BN Inorganic materials 0.000 description 2
PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
238000006243 chemical reaction Methods 0.000 description 2
239000007795 chemical reaction product Substances 0.000 description 2
238000005530 etching Methods 0.000 description 2
238000001393 microlithography Methods 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
238000009659 non-destructive testing Methods 0.000 description 2
238000005240 physical vapour deposition Methods 0.000 description 2
229910052710 silicon Inorganic materials 0.000 description 2
125000006850 spacer group Chemical group 0.000 description 2
MRMOZBOQVYRSEM-UHFFFAOYSA-N tetraethyllead Chemical compound CC[Pb](CC)(CC)CC MRMOZBOQVYRSEM-UHFFFAOYSA-N 0.000 description 2
238000001771 vacuum deposition Methods 0.000 description 2
UNILWMWFPHPYOR-KXEYIPSPSA-M 1-[6-[2-[3-[3-[3-[2-[2-[3-[[2-[2-[[(2r)-1-[[2-[[(2r)-1-[3-[2-[2-[3-[[2-(2-amino-2-oxoethoxy)acetyl]amino]propoxy]ethoxy]ethoxy]propylamino]-3-hydroxy-1-oxopropan-2-yl]amino]-2-oxoethyl]amino]-3-[(2r)-2,3-di(hexadecanoyloxy)propyl]sulfanyl-1-oxopropan-2-yl Chemical compound O=C1C(SCCC(=O)NCCCOCCOCCOCCCNC(=O)COCC(=O)N[C@@H](CSC[C@@H](COC(=O)CCCCCCCCCCCCCCC)OC(=O)CCCCCCCCCCCCCCC)C(=O)NCC(=O)N[C@H](CO)C(=O)NCCCOCCOCCOCCCNC(=O)COCC(N)=O)CC(=O)N1CCNC(=O)CCCCCN\1C2=CC=C(S([O-])(=O)=O)C=C2CC/1=C/C=C/C=C/C1=[N+](CC)C2=CC=C(S([O-])(=O)=O)C=C2C1 UNILWMWFPHPYOR-KXEYIPSPSA-M 0.000 description 1
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
125000000217 alkyl group Chemical group 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
229910021529 ammonia Inorganic materials 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 description 1
UJYLYGDHTIVYRI-UHFFFAOYSA-N cadmium(2+);ethane Chemical compound [Cd+2].[CH2-]C.[CH2-]C UJYLYGDHTIVYRI-UHFFFAOYSA-N 0.000 description 1
229910052799 carbon Inorganic materials 0.000 description 1
238000001311 chemical methods and process Methods 0.000 description 1
239000002178 crystalline material Substances 0.000 description 1
238000000354 decomposition reaction Methods 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
230000007547 defect Effects 0.000 description 1
239000003814 drug Substances 0.000 description 1
238000000407 epitaxy Methods 0.000 description 1
ILXWFJOFKUNZJA-UHFFFAOYSA-N ethyltellanylethane Chemical compound CC[Te]CC ILXWFJOFKUNZJA-UHFFFAOYSA-N 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
150000004678 hydrides Chemical class 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
238000007689 inspection Methods 0.000 description 1
150000002611 lead compounds Chemical class 0.000 description 1
229910001092 metal group alloy Inorganic materials 0.000 description 1
239000000203 mixture Substances 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
238000010926 purge Methods 0.000 description 1
125000003748 selenium group Chemical group *[Se]* 0.000 description 1
SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
150000003346 selenoethers Chemical class 0.000 description 1
238000001228 spectrum Methods 0.000 description 1
239000000126 substance Substances 0.000 description 1
125000004434 sulfur atom Chemical group 0.000 description 1
229910052714 tellurium Inorganic materials 0.000 description 1
PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
150000003498 tellurium compounds Chemical class 0.000 description 1
JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1

Landscapes

Analysing Materials By The Use Of Radiation (AREA)

CA 612969 1989-08-11 1989-09-25 Dispositifs de diffraction de rayons x obtenus par epitaxie de couches atomiques Expired - Fee Related CA1333426C (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US39366789A	1989-08-11	1989-08-11
US07/393,667		1989-08-11

Publications (1)

Publication Number	Publication Date
CA1333426C true CA1333426C (fr)	1994-12-06

Family

ID=23555729

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA 612969 Expired - Fee Related CA1333426C (fr)	1989-08-11	1989-09-25	Dispositifs de diffraction de rayons x obtenus par epitaxie de couches atomiques

Country Status (1)

Country	Link
CA (1)	CA1333426C (fr)

1989
- 1989-09-25 CA CA 612969 patent/CA1333426C/fr not_active Expired - Fee Related

Legal Events

Date	Code	Title	Description
1998-12-07	MKLA	Lapsed

Publication	Publication Date	Title
US5458084A (en)	1995-10-17	X-ray wave diffraction optics constructed by atomic layer epitaxy
EP0128026B1 (fr)	1989-08-30	Structures dispersives et réflectives pour rayons X avec réflexion et résolution améliorées et méthode de construction
US4545646A (en)	1985-10-08	Process for forming a graded index optical material and structures formed thereby
US4525853A (en)	1985-06-25	Point source X-ray focusing device
US4727000A (en)	1988-02-23	X-ray dispersive and reflective structures
US20240012177A1 (en)	2024-01-11	Self-Aligned Nano-Pillar Coatings and Method of Manufacturing
Bilderback et al.	1983	Design of doubly focusing, tunable (5–30 keV), wide bandpass optics made from layered synthetic microstructures
US10546968B2 (en)	2020-01-28	Solar concentration system using volume holograms
EP0256035A1 (fr)	1988-02-24	Procede de formation d'une couche optique stable en differents milieux et structures formees grace audit procede.
KR20140016861A (ko)	2014-02-10	나노-광학 굴절 광학기기
US4698833A (en)	1987-10-06	Subassembly, method and system for monochromatizing X-rays
Charles	1971	Optimization of Multilayer Soap Crystals for Ultrasoft X‐Ray Diffraction
US3885153A (en)	1975-05-20	Multi-layer monochromator
WO2007108212A1 (fr)	2007-09-27	Structure periodique, son procede de fabrication et produit d'application
Cruddace et al.	1990	Measurements of the normal-incidence X-ray reflectance of a molybdenum-silicon multilayer deposited on a 2000 l/mm grating
CA1333426C (fr)	1994-12-06	Dispositifs de diffraction de rayons x obtenus par epitaxie de couches atomiques
Barbee Jr	1988	The use of multilayer diffraction gratings in the determination of x-ray, soft x-ray, and VUV elemental scattering cross-sections
JPH04169898A (ja)	1992-06-17	Ｘ線多層膜鏡構造体
Abaskin et al.	2016	Investigation of structural features of As2S3–Se multilayer nanostructure by Raman spectroscopy
Lee et al.	1985	Soft x-ray optics using multilayer mirrors
Lumeau et al.	2010	Ultra-narrow bandpass filters based on volume Bragg grating technologies
US4238529A (en)	1980-12-09	Long wave-length x-ray diffraction crystal
Boher et al.	1991	Silicon/silicon oxide and silicon/silicon nitride multilayers for extreme ultraviolet
JPS63106703A (ja)	1988-05-11	光学素子
Myers et al.	1970	Optical properties of single crystals of NbSe2 and Nb1. 04Se2