CA2000525A1 - Dispositif super-luminescent a emission de surface, couple a un reseau de diffraction - Google Patents

Dispositif super-luminescent a emission de surface, couple a un reseau de diffraction

Info

Publication number
CA2000525A1
CA2000525A1 CA2000525A CA2000525A CA2000525A1 CA 2000525 A1 CA2000525 A1 CA 2000525A1 CA 2000525 A CA2000525 A CA 2000525A CA 2000525 A CA2000525 A CA 2000525A CA 2000525 A1 CA2000525 A1 CA 2000525A1
Authority
CA
Canada
Prior art keywords
grating
coupled surface
emitting
diode
superluminescent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2000525A
Other languages
English (en)
Other versions
CA2000525C (fr
Inventor
Gary Alan Evans
Nils William Carlson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2000525A1 publication Critical patent/CA2000525A1/fr
Application granted granted Critical
Publication of CA2000525C publication Critical patent/CA2000525C/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/042—Superluminescent diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Gyroscopes (AREA)
CA002000525A 1988-10-27 1989-10-12 Dispositif super-luminescent a emission de surface, couple a un reseau de diffraction Expired - Lifetime CA2000525C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US263,464 1988-10-27
US07/263,464 US4952019A (en) 1988-10-27 1988-10-27 Grating-coupled surface-emitting superluminescent device

Publications (2)

Publication Number Publication Date
CA2000525A1 true CA2000525A1 (fr) 1990-04-27
CA2000525C CA2000525C (fr) 1994-05-10

Family

ID=23001893

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002000525A Expired - Lifetime CA2000525C (fr) 1988-10-27 1989-10-12 Dispositif super-luminescent a emission de surface, couple a un reseau de diffraction

Country Status (2)

Country Link
US (1) US4952019A (fr)
CA (1) CA2000525C (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0442582A (ja) * 1990-06-08 1992-02-13 Eastman Kodak Japan Kk 発光ダイオードアレイ
US5111467A (en) * 1990-09-10 1992-05-05 Tacan Corporation Hybrid rugate filter assembly for temperature stabilized emission of grating coupled surface emitting lasers
US5109386A (en) * 1990-09-10 1992-04-28 Tacan Corporation Rugate filter on grating coupled surface emitting laser array
US5123070A (en) * 1990-09-10 1992-06-16 Tacan Corporation Method of monolithic temperature-stabilization of a laser diode by evanescent coupling to a temperature stable grating
US5159603A (en) * 1991-06-05 1992-10-27 United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Quantum well, beam deflecting surface emitting lasers
US5329134A (en) * 1992-01-10 1994-07-12 International Business Machines Corporation Superluminescent diode having a quantum well and cavity length dependent threshold current
JP2830591B2 (ja) * 1992-03-12 1998-12-02 日本電気株式会社 半導体光機能素子
EP0582078B1 (fr) * 1992-08-05 2000-08-16 Motorola, Inc. Diode superluminescente du type à émission latérale
JP3643486B2 (ja) * 1998-08-04 2005-04-27 株式会社東芝 光機能素子及び光通信システム
US20020176464A1 (en) * 2001-03-22 2002-11-28 Smolski Oleg V. InGaP etch stop
US6903379B2 (en) * 2001-11-16 2005-06-07 Gelcore Llc GaN based LED lighting extraction efficiency using digital diffractive phase grating
US20040114642A1 (en) * 2002-03-22 2004-06-17 Bullington Jeff A. Laser diode with output fiber feedback
US7194016B2 (en) 2002-03-22 2007-03-20 The Research Foundation Of The University Of Central Florida Laser-to-fiber coupling
US7817702B2 (en) * 2003-03-19 2010-10-19 Binoptics Corporation High SMSR unidirectional etched lasers and low back-reflection photonic device
JP2013030642A (ja) * 2011-07-29 2013-02-07 Mitsubishi Electric Corp レーザ素子
JP2015064413A (ja) * 2013-09-24 2015-04-09 富士通株式会社 光半導体素子とその製造方法
KR102188960B1 (ko) * 2017-01-13 2020-12-10 한국전자통신연구원 광학 장치, 분포 브라그 반사형 레이저 다이오드의 제조방법, 및 광학 장치의 제조 방법
CN109217106A (zh) * 2017-07-05 2019-01-15 长春理工大学 一种采用多周期表面DFB光反馈系统抑制1550nm SLD器件F-P激射的方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4092659A (en) * 1977-04-28 1978-05-30 Rca Corporation Multi-layer reflector for electroluminescent device
FR2428333A1 (fr) * 1978-06-09 1980-01-04 Thomson Csf " laser " a reflecteur distribue
US4317086A (en) * 1979-09-13 1982-02-23 Xerox Corporation Passivation and reflector structure for electroluminescent devices
JPS6066489A (ja) * 1983-09-21 1985-04-16 Nec Corp 分布帰還分布ブラッグ反射器型半導体レ−ザ
JPS614290A (ja) * 1984-06-18 1986-01-10 Nec Corp 分布帰還型半導体レ−ザ
US4639922A (en) * 1984-09-28 1987-01-27 Bell Communications Research, Inc. Single mode injection laser structure
US4675873A (en) * 1984-09-28 1987-06-23 Bell Communications Research, Inc. Single mode injection laser structure
JPS61148890A (ja) * 1984-12-22 1986-07-07 Dainippon Printing Co Ltd 分布帰還形半導体レ−ザ素子
JPS61216383A (ja) * 1985-03-20 1986-09-26 Nec Corp 分布帰還型半導体レ−ザ
US4730331A (en) * 1985-04-03 1988-03-08 Xerox Corporation Superluminescent LED source
JPS62189785A (ja) * 1986-02-17 1987-08-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分布ブラツグ反射器を有する半導体装置
EP0237812A3 (fr) * 1986-03-20 1988-06-29 Siemens Aktiengesellschaft Réseau de lasers à semi-conducteur donnant un faisceau de rayonnement collimaté
JPS6332988A (ja) * 1986-07-25 1988-02-12 Nec Corp 分布帰還形半導体レ−ザ
US4758090A (en) * 1986-09-25 1988-07-19 Allied-Signal Inc. Optical wavelength monitor using blazed diffraction grating
US4786132A (en) * 1987-03-31 1988-11-22 Lytel Corporation Hybrid distributed bragg reflector laser
US4764934A (en) * 1987-07-27 1988-08-16 Ortel Corporation Superluminescent diode and single mode laser

Also Published As

Publication number Publication date
CA2000525C (fr) 1994-05-10
US4952019A (en) 1990-08-28

Similar Documents

Publication Publication Date Title
CA2000525A1 (fr) Dispositif super-luminescent a emission de surface, couple a un reseau de diffraction
CA2101364A1 (fr) Amplificateur et laser optiques munis d&#39;un reseau attenuateur de la pente du gain
DE69112725D1 (de) Laserdiode mit abstimmbarer Wellenlänge.
DE3682085D1 (de) Interferometrie mit veraenderlicher wellenlaenge und interferometer mit laserdiode.
EP0348941A3 (fr) Dispositif laser à semi-conducteur
CA2118612A1 (fr) Laser a plaquette de semiconducteur pompe transversalement a rendement eleve
WO2000072409A3 (fr) Lasers a reflecteur de bragg reparti et caracteristiques angulaires et spectrales ameliorees
EP1513006A3 (fr) Dispositif de conversion de longueur d&#39;onde optique
CA2068443A1 (fr) Laser a semiconducteur a retroaction repartie a commande de gain
IT8619223A0 (it) Risonatore laser instabile con accoppiatore di uscita a riflettrivita&#39; radialmente variabile.
DE59203842D1 (de) Abstimmbare Laserdiode.
CA2166471A1 (fr) Laser
EP0390524A3 (fr) Convertisseur de longueur d&#39;onde optique
FR2517131B1 (fr) Dispositif pour faire varier la puissance d&#39;un laser
NO910595D0 (no) Antenne.
EP0246793A3 (fr) Laser à mode fondamental et transversal et à haute puissance
JPS60246688A (ja) 光帰還型半導体レ−ザ装置
JPS55115008A (en) Semiconductor laser coupler
WO2001015287A3 (fr) Laser semi-conducteur
FR2531774B1 (fr)
RU93057563A (ru) Полупроводниковый лазер с оптической накачкой
EP0334209A3 (en) Laser diode for the generation of strongly monochromatic laser light
CA2242853A1 (fr) Diode laser de forte puissance
JPS57124491A (en) Coupler for semiconductor laser and optical fiber
JPS5333078A (en) Semiconductor laser device

Legal Events

Date Code Title Description
EEER Examination request
MKEX Expiry