CA2006129C - Ampoule pour lampe a quartz, en feuille de molybdene, avec surface resistant a l'oxydation, formee par implantation ionique - Google Patents

Ampoule pour lampe a quartz, en feuille de molybdene, avec surface resistant a l'oxydation, formee par implantation ionique

Info

Publication number: CA2006129C
Authority: CA; Canada
Prior art keywords: laser; lightwave; wavelength; transmitter; lambda
Prior art date: 1988-12-21
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CA 2006129

Other languages

English (en)

Other versions

CA2006129A1 (fr

Inventor

Sandra Lee Madden

Mark D. Beschle

Roy C. Martin

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Osram Sylvania Inc

Original Assignee

GTE Products Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-12-21

Filing date

1989-12-20

Publication date

1994-03-08

1989-12-20 Application filed by GTE Products Corp filed Critical GTE Products Corp

1990-06-21 Publication of CA2006129A1 publication Critical patent/CA2006129A1/fr

1994-03-08 Application granted granted Critical

1994-03-08 Publication of CA2006129C publication Critical patent/CA2006129C/fr

2009-12-20 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title 1
239000011888 foil Substances 0.000 title 1
238000005468 ion implantation Methods 0.000 title 1
229910052750 molybdenum Inorganic materials 0.000 title 1
239000011733 molybdenum Substances 0.000 title 1
230000003647 oxidation Effects 0.000 title 1
238000007254 oxidation reaction Methods 0.000 title 1
239000010453 quartz Substances 0.000 title 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 1
239000004065 semiconductor Substances 0.000 claims abstract description 21
238000004891 communication Methods 0.000 claims abstract description 5
230000005540 biological transmission Effects 0.000 claims description 20
230000000737 periodic effect Effects 0.000 claims description 6
230000004044 response Effects 0.000 abstract description 30
230000000694 effects Effects 0.000 abstract description 7
238000002347 injection Methods 0.000 abstract description 3
239000007924 injection Substances 0.000 abstract description 3
230000002939 deleterious effect Effects 0.000 abstract 1
238000000034 method Methods 0.000 description 14
230000000903 blocking effect Effects 0.000 description 6
239000000758 substrate Substances 0.000 description 6
238000013459 approach Methods 0.000 description 4
238000013461 design Methods 0.000 description 4
239000000463 material Substances 0.000 description 4
229910001218 Gallium arsenide Inorganic materials 0.000 description 3
230000003287 optical effect Effects 0.000 description 3
239000012071 phase Substances 0.000 description 3
230000003595 spectral effect Effects 0.000 description 3
229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
230000001427 coherent effect Effects 0.000 description 2
230000008878 coupling Effects 0.000 description 2
238000010168 coupling process Methods 0.000 description 2
238000005859 coupling reaction Methods 0.000 description 2
238000010586 diagram Methods 0.000 description 2
239000002019 doping agent Substances 0.000 description 2
230000008020 evaporation Effects 0.000 description 2
238000001704 evaporation Methods 0.000 description 2
230000001629 suppression Effects 0.000 description 2
229910052725 zinc Inorganic materials 0.000 description 2
229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
MODGUXHMLLXODK-UHFFFAOYSA-N [Br].CO Chemical compound [Br].CO MODGUXHMLLXODK-UHFFFAOYSA-N 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
230000001668 ameliorated effect Effects 0.000 description 1
238000000137 annealing Methods 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
230000008859 change Effects 0.000 description 1
238000004871 chemical beam epitaxy Methods 0.000 description 1
238000005253 cladding Methods 0.000 description 1
238000000576 coating method Methods 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
239000004020 conductor Substances 0.000 description 1
238000006731 degradation reaction Methods 0.000 description 1
238000001514 detection method Methods 0.000 description 1
238000006073 displacement reaction Methods 0.000 description 1
238000001312 dry etching Methods 0.000 description 1
238000010894 electron beam technology Methods 0.000 description 1
238000005530 etching Methods 0.000 description 1
239000000835 fiber Substances 0.000 description 1
125000005842 heteroatom Chemical group 0.000 description 1
238000004943 liquid phase epitaxy Methods 0.000 description 1
229910052744 lithium Inorganic materials 0.000 description 1
GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
238000005259 measurement Methods 0.000 description 1
230000001404 mediated effect Effects 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
239000000203 mixture Substances 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000001451 molecular beam epitaxy Methods 0.000 description 1
239000013307 optical fiber Substances 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
230000005855 radiation Effects 0.000 description 1
238000000638 solvent extraction Methods 0.000 description 1
238000003892 spreading Methods 0.000 description 1
230000007480 spreading Effects 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
229910052718 tin Inorganic materials 0.000 description 1
238000000927 vapour-phase epitaxy Methods 0.000 description 1
238000001039 wet etching Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/36—Seals between parts of vessels; Seals for leading-in conductors; Leading-in conductors
- H01J61/366—Seals for leading-in conductors
- H01J61/368—Pinched seals or analogous seals
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J5/00—Details relating to vessels or to leading-in conductors common to two or more basic types of discharge tubes or lamps
- H01J5/32—Seals for leading-in conductors
- H01J5/38—Pinched-stem or analogous seals
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J5/00—Details relating to vessels or to leading-in conductors common to two or more basic types of discharge tubes or lamps
- H01J5/46—Leading-in conductors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/28—Manufacture of leading-in conductors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/32—Sealing leading-in conductors
- H01J9/323—Sealing leading-in conductors into a discharge lamp or a gas-filled discharge device
- H01J9/326—Sealing leading-in conductors into a discharge lamp or a gas-filled discharge device making pinched-stem or analogous seals

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Vessels And Coating Films For Discharge Lamps (AREA)
Semiconductor Lasers (AREA)
Physical Vapour Deposition (AREA)

CA 2006129 1988-12-21 1989-12-20 Ampoule pour lampe a quartz, en feuille de molybdene, avec surface resistant a l'oxydation, formee par implantation ionique Expired - Fee Related CA2006129C (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US28775588A	1988-12-21	1988-12-21
US07/287,755		1988-12-21

Publications (2)

Publication Number	Publication Date
CA2006129A1 CA2006129A1 (fr)	1990-06-21
CA2006129C true CA2006129C (fr)	1994-03-08

Family

ID=23104197

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA 2006129 Expired - Fee Related CA2006129C (fr)	1988-12-21	1989-12-20	Ampoule pour lampe a quartz, en feuille de molybdene, avec surface resistant a l'oxydation, formee par implantation ionique

Country Status (4)

Country	Link
EP (1)	EP0375402B1 (fr)
JP (1)	JPH02267850A (fr)
CA (1)	CA2006129C (fr)
DE (1)	DE68928611T2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5542867A (en) *	1993-12-08	1996-08-06	Ushiodenki Kabushiki Kaisha	Process for connection of a molybdenum foil to a molybdenum lead portion and method of producing a hermetically enclosed part of a lamp using the process
DE69927574T2 (de) *	1998-08-13	2006-07-06	Koninklijke Philips Electronics N.V.	Elektrische lampe mit einem beschichteten aussenstromleiter
EP1797580A2 (fr) *	2004-09-30	2007-06-20	Koninklijke Philips Electronics N.V.	Lampe electrique
CN101584022B (zh)	2005-07-26	2012-02-08	皇家飞利浦电子股份有限公司	灯和制造灯的方法
DE102007059340B4 (de)	2006-12-19	2019-10-24	Osram Gmbh	Stromzuführungssystem

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL7501272A (nl) *	1975-02-04	1976-08-06	Philips Nv	Electrische lamp.
JPS5544786A (en) *	1978-09-27	1980-03-29	Hitachi Ltd	Pressure sensor
NL183794B (nl) *	1979-02-26		Philips Nv	Hogedrukkwikontladingslamp.
GB8429740D0 (en) *	1984-11-24	1985-01-03	Emi Plc Thorn	Lead wires in pinch seals
DE3775218D1 (de) *	1986-09-20	1992-01-23	Fraunhofer Ges Forschung	Verfahren zur erweiterung der aufloesung einer zeilen- oder matrixkamera.

1989
- 1989-12-20 CA CA 2006129 patent/CA2006129C/fr not_active Expired - Fee Related
- 1989-12-20 DE DE1989628611 patent/DE68928611T2/de not_active Expired - Fee Related
- 1989-12-20 EP EP19890313370 patent/EP0375402B1/fr not_active Expired - Lifetime
- 1989-12-21 JP JP32980489A patent/JPH02267850A/ja active Pending

Also Published As

Publication number	Publication date
CA2006129A1 (fr)	1990-06-21
EP0375402B1 (fr)	1998-03-18
DE68928611D1 (de)	1998-04-23
DE68928611T2 (de)	1998-11-12
EP0375402A2 (fr)	1990-06-27
EP0375402A3 (fr)	1991-03-27
JPH02267850A (ja)	1990-11-01

Legal Events

Date	Code	Title	Description
1989-12-20	EEER	Examination request
1996-06-20	MKLA	Lapsed

Publication	Publication Date	Title
US4908833A (en)	1990-03-13	Distributed feedback laser for frequency modulated communication systems
US4905253A (en)	1990-02-27	Distributed Bragg reflector laser for frequency modulated communication systems
US5020153A (en)	1991-05-28	Tunable narrowband receiver utilizing distributed Bragg reflector laser structure
US8457169B2 (en)	2013-06-04	Integrated semiconductor laser element, semiconductor laser module, and optical transmission system
EP0477987B1 (fr)	1995-12-20	Circuit et disposition d'électrodes pour induire une réponse plate de la modulation en fréquence des lasers à semi-conducteur
EP0657975B1 (fr)	1998-03-04	Laser à semi-conducteur à séléctivité du mode de polarisation, source de lumière et système de communication optique utilisant ce laser
US5208822A (en)	1993-05-04	Semiconductor element having opposite signs of α parameter
EP0300790A2 (fr)	1989-01-25	Laser à semi-conducteur
CA2006129C (fr)	1994-03-08	Ampoule pour lampe a quartz, en feuille de molybdene, avec surface resistant a l'oxydation, formee par implantation ionique
US7065300B1 (en)	2006-06-20	Optical transmitter including a linear semiconductor optical amplifier
CA1249362A (fr)	1989-01-24	Structure de laser a injection a faible bruit
US20210234332A1 (en)	2021-07-29	Optical Transmitter and Multi-Wavelength Optical Transmitter
CA1252188A (fr)	1989-04-04	Structure de laser a injection monomode
CN115336123B (zh)	2025-04-04	电吸收调制激光器
JP2015095513A (ja)	2015-05-18	波長可変光源
US4747107A (en)	1988-05-24	Single mode injection laser
US6363093B1 (en)	2002-03-26	Method and apparatus for a single-frequency laser
US20240047941A1 (en)	2024-02-08	Wavelength Tunable Optical Transmitter
US6795472B2 (en)	2004-09-21	Laser with a resonant optical reflector
US20020181516A1 (en)	2002-12-05	Active phase tuning of DBR lasers
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JP3450573B2 (ja)	2003-09-29	半導体レーザ装置、その駆動方法及びそれを用いた光通信システム
Nesset et al.	1991	Multi-electrode, tunable, narrow linewidth BH DFB lasers for use in high-bit-rate coherent systems
JP2007157884A (ja)	2007-06-21	光変調器集積光源
JPH08298354A (ja)	1996-11-12	半導体レーザ装置、その駆動方法及びそれを用いた光通信システム