CA2007670A1 - Photodetecteur semiconducteur et methode de fabrication de ce photodetecteur - Google Patents

Photodetecteur semiconducteur et methode de fabrication de ce photodetecteur

Info

Publication number
CA2007670A1
CA2007670A1 CA2007670A CA2007670A CA2007670A1 CA 2007670 A1 CA2007670 A1 CA 2007670A1 CA 2007670 A CA2007670 A CA 2007670A CA 2007670 A CA2007670 A CA 2007670A CA 2007670 A1 CA2007670 A1 CA 2007670A1
Authority
CA
Canada
Prior art keywords
type
depression
high concentration
layer
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2007670A
Other languages
English (en)
Other versions
CA2007670C (fr
Inventor
Keiji Takaoka
Tetsuo Sadamasa
Motoyasu Morinaga
Nobuo Suzuki
Kenji Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CA2007670A1 publication Critical patent/CA2007670A1/fr
Application granted granted Critical
Publication of CA2007670C publication Critical patent/CA2007670C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1243—Active materials comprising only Group III-V materials, e.g. GaAs characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Light Receiving Elements (AREA)
CA002007670A 1989-01-31 1990-01-12 Photodetecteur semiconducteur et methode de fabrication de ce photodetecteur Expired - Fee Related CA2007670C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-21070 1989-01-31
JP1021070A JPH02202071A (ja) 1989-01-31 1989-01-31 半導体受光素子及びその製造方法

Publications (2)

Publication Number Publication Date
CA2007670A1 true CA2007670A1 (fr) 1990-07-31
CA2007670C CA2007670C (fr) 1993-09-21

Family

ID=12044629

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002007670A Expired - Fee Related CA2007670C (fr) 1989-01-31 1990-01-12 Photodetecteur semiconducteur et methode de fabrication de ce photodetecteur

Country Status (4)

Country Link
US (1) US5001335A (fr)
EP (1) EP0384557A1 (fr)
JP (1) JPH02202071A (fr)
CA (1) CA2007670C (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69228046T2 (de) * 1991-12-16 1999-07-01 Koninklijke Philips Electronics N.V., Eindhoven Zener-Diode mit Bezugs- und Schutzdiode
JP2910696B2 (ja) * 1996-09-20 1999-06-23 日本電気株式会社 半導体光検出器
US5920065A (en) * 1997-11-14 1999-07-06 The United States Of America As Represented By The Secretary Of The Navy Optically activated back-to-back PIN diode switch having exposed intrinsic region
US6078111A (en) * 1997-12-23 2000-06-20 The United States Of America As Represented By The Secretary Of The Navy Photovoltaic optoelectronic switch
RU2142175C1 (ru) * 1998-09-18 1999-11-27 Общество с ограниченной ответственностью "Центр перспективных технологий и аппаратуры" Лавинный фотоприемник
KR100636093B1 (ko) * 1999-07-12 2006-10-19 삼성전자주식회사 광검출기 디바이스 및 그 제조방법
US6359293B1 (en) * 1999-08-17 2002-03-19 Agere Systems Guardian Corp. Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes
KR100366046B1 (ko) * 2000-06-29 2002-12-27 삼성전자 주식회사 에벌란치 포토다이오드 제조방법
JP3910817B2 (ja) 2000-12-19 2007-04-25 ユーディナデバイス株式会社 半導体受光装置
RU2185689C2 (ru) * 2001-02-20 2002-07-20 Головин Виктор Михайлович Лавинный фотоприемник (варианты)
US9640703B2 (en) * 2004-10-25 2017-05-02 Mitsubishi Electric Corporation Avalanche photodiode
US8008688B2 (en) * 2008-04-01 2011-08-30 Jds Uniphase Corporation Photodiode and method of fabrication
US8198650B2 (en) * 2008-12-08 2012-06-12 General Electric Company Semiconductor devices and systems
US8669588B2 (en) * 2009-07-06 2014-03-11 Raytheon Company Epitaxially-grown position sensitive detector
US20120280350A1 (en) * 2011-05-03 2012-11-08 Raytheon Company Barrier device position sensitive detector
US10115764B2 (en) 2011-08-15 2018-10-30 Raytheon Company Multi-band position sensitive imaging arrays
CN107093643B (zh) * 2017-04-05 2019-04-19 大连理工大学 一种氮化镓位置灵敏辐射探测器及其制备方法
CN111799349A (zh) * 2020-07-06 2020-10-20 武汉光谷量子技术有限公司 一种雪崩光电二极管及其制作方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1228663A (fr) * 1984-04-10 1987-10-27 Paul P. Webb Photodetecteur a region d'avalanche isolee
JPH0824199B2 (ja) * 1984-05-31 1996-03-06 富士通株式会社 半導体受光素子の製造方法
JPS62211967A (ja) * 1986-03-13 1987-09-17 Fujitsu Ltd 半導体受光装置
DE3728691A1 (de) * 1986-08-28 1988-03-10 Nissan Motor Lichtempfindlicher positionssensor
CA1280196C (fr) * 1987-07-17 1991-02-12 Paul Perry Webb Photodiode avalanche
ATE153675T1 (de) * 1995-09-13 1997-06-15 Witco Gmbh Verfahren zur herstellung von metallocen- katalysatorsystemen auf inerten trägermaterialien unter verwendung von gasphasenreaktoren

Also Published As

Publication number Publication date
US5001335A (en) 1991-03-19
EP0384557A1 (fr) 1990-08-29
CA2007670C (fr) 1993-09-21
JPH02202071A (ja) 1990-08-10

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