CA2024133C - Controle spectroscopique du traitement plasmatique de semiconducteurs iii-v - Google Patents

Controle spectroscopique du traitement plasmatique de semiconducteurs iii-v

Info

Publication number: CA2024133C
Authority: CA; Canada
Prior art keywords: photoluminescence; plasma; iii; hydrogen containing; containing plasma
Prior art date: 1989-09-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CA 2024133

Other languages

English (en)

Other versions

CA2024133A1 (fr

Inventor

Richard Alan Gottscho

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

AT&T Corp

Original Assignee

American Telephone and Telegraph Co Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-09-01

Filing date

1990-08-28

Publication date

1994-08-23

1990-08-28 Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc

1991-03-02 Publication of CA2024133A1 publication Critical patent/CA2024133A1/fr

1994-08-23 Application granted granted Critical

1994-08-23 Publication of CA2024133C publication Critical patent/CA2024133C/fr

2010-08-28 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

238000012545 processing Methods 0.000 title claims abstract description 12
239000004065 semiconductor Substances 0.000 title claims abstract description 9
238000000628 photoluminescence spectroscopy Methods 0.000 title abstract description 3
238000000034 method Methods 0.000 claims abstract description 22
238000012544 monitoring process Methods 0.000 claims abstract description 7
238000005424 photoluminescence Methods 0.000 claims description 24
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
239000001257 hydrogen Substances 0.000 claims description 9
229910052739 hydrogen Inorganic materials 0.000 claims description 9
230000004044 response Effects 0.000 claims description 4
230000036962 time dependent Effects 0.000 claims description 4
230000005855 radiation Effects 0.000 claims 4
230000002459 sustained effect Effects 0.000 claims 2
230000008569 process Effects 0.000 abstract description 12
238000005530 etching Methods 0.000 abstract description 8
238000011065 in-situ storage Methods 0.000 abstract description 5
238000002161 passivation Methods 0.000 abstract description 5
238000001035 drying Methods 0.000 abstract 1
125000005842 heteroatom Chemical group 0.000 abstract 1
238000009832 plasma treatment Methods 0.000 abstract 1
210000002381 plasma Anatomy 0.000 description 24
229910001218 Gallium arsenide Inorganic materials 0.000 description 22
ZVNPWFOVUDMGRP-UHFFFAOYSA-N 4-methylaminophenol sulfate Chemical compound OS(O)(=O)=O.CNC1=CC=C(O)C=C1.CNC1=CC=C(O)C=C1 ZVNPWFOVUDMGRP-UHFFFAOYSA-N 0.000 description 10
239000000758 substrate Substances 0.000 description 10
238000001514 detection method Methods 0.000 description 6
229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
230000007423 decrease Effects 0.000 description 4
239000000463 material Substances 0.000 description 4
238000006862 quantum yield reaction Methods 0.000 description 3
230000006798 recombination Effects 0.000 description 3
238000005215 recombination Methods 0.000 description 3
238000010521 absorption reaction Methods 0.000 description 2
230000007547 defect Effects 0.000 description 2
230000001419 dependent effect Effects 0.000 description 2
238000012631 diagnostic technique Methods 0.000 description 2
238000005259 measurement Methods 0.000 description 2
239000000203 mixture Substances 0.000 description 2
238000004886 process control Methods 0.000 description 2
238000002310 reflectometry Methods 0.000 description 2
RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
229910015844 BCl3 Inorganic materials 0.000 description 1
229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
241000282320 Panthera leo Species 0.000 description 1
238000001636 atomic emission spectroscopy Methods 0.000 description 1
238000005452 bending Methods 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
230000001276 controlling effect Effects 0.000 description 1
230000002596 correlated effect Effects 0.000 description 1
230000003247 decreasing effect Effects 0.000 description 1
230000004069 differentiation Effects 0.000 description 1
230000005684 electric field Effects 0.000 description 1
238000011066 ex-situ storage Methods 0.000 description 1
230000005284 excitation Effects 0.000 description 1
230000005669 field effect Effects 0.000 description 1
239000007789 gas Substances 0.000 description 1
230000014509 gene expression Effects 0.000 description 1
238000010438 heat treatment Methods 0.000 description 1
150000002431 hydrogen Chemical class 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
238000004556 laser interferometry Methods 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
238000001465 metallisation Methods 0.000 description 1
GWUSZQUVEVMBPI-UHFFFAOYSA-N nimetazepam Chemical compound N=1CC(=O)N(C)C2=CC=C([N+]([O-])=O)C=C2C=1C1=CC=CC=C1 GWUSZQUVEVMBPI-UHFFFAOYSA-N 0.000 description 1
238000001782 photodegradation Methods 0.000 description 1
238000001020 plasma etching Methods 0.000 description 1
230000002028 premature Effects 0.000 description 1
238000011165 process development Methods 0.000 description 1
239000005297 pyrex Substances 0.000 description 1
238000011896 sensitive detection Methods 0.000 description 1
230000003595 spectral effect Effects 0.000 description 1
238000004611 spectroscopical analysis Methods 0.000 description 1
238000001228 spectrum Methods 0.000 description 1
239000000126 substance Substances 0.000 description 1
230000007704 transition Effects 0.000 description 1
FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
230000007306 turnover Effects 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1

Landscapes

Drying Of Semiconductors (AREA)
Testing Or Measuring Of Semiconductors Or The Like (AREA)

CA 2024133 1989-09-01 1990-08-28 Controle spectroscopique du traitement plasmatique de semiconducteurs iii-v Expired - Fee Related CA2024133C (fr)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date
US477,012		1983-03-21
US40203089A	1989-09-01	1989-09-01
US402,030		1989-09-01
US47701290A	1990-02-07	1990-02-07

Publications (2)

Publication Number	Publication Date
CA2024133A1 CA2024133A1 (fr)	1991-03-02
CA2024133C true CA2024133C (fr)	1994-08-23

Family

ID=27017693

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA 2024133 Expired - Fee Related CA2024133C (fr)	1989-09-01	1990-08-28	Controle spectroscopique du traitement plasmatique de semiconducteurs iii-v

Country Status (1)

Country	Link
CA (1)	CA2024133C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP4407656A1 (fr) *	2023-01-27	2024-07-31	Epinovatech AB	Structure semi-conductrice

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP3855530B1 (fr)	2020-01-24	2025-04-16	Epinovatech AB	Batterie à semi-conducteurs
EP3916804A1 (fr)	2020-05-29	2021-12-01	Epinovatech AB	Hemt vertical et procédé de fabrication d'un hemt vertical
EP4090139B1 (fr)	2021-05-10	2023-10-25	Epinovatech AB	Dispositif convertisseur de puissance

1990
- 1990-08-28 CA CA 2024133 patent/CA2024133C/fr not_active Expired - Fee Related

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP4407656A1 (fr) *	2023-01-27	2024-07-31	Epinovatech AB	Structure semi-conductrice
WO2024156804A1 (fr) *	2023-01-27	2024-08-02	Epinovatech Ab	Structure semi-conductrice
TWI889073B (zh) *	2023-01-27	2025-07-01	瑞典商艾皮諾科技公司	錯位數量減少的半導體結構及用於製造錯位數量減少的半導體結構的方法

Also Published As

Publication number	Publication date
CA2024133A1 (fr)	1991-03-02

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Legal Events

Date	Code	Title	Description
1990-08-28	EEER	Examination request
2003-08-28	MKLA	Lapsed