CA2030008A1 - Dispositif recepteur de lumiere - Google Patents

Dispositif recepteur de lumiere

Info

Publication number
CA2030008A1
CA2030008A1 CA2030008A CA2030008A CA2030008A1 CA 2030008 A1 CA2030008 A1 CA 2030008A1 CA 2030008 A CA2030008 A CA 2030008A CA 2030008 A CA2030008 A CA 2030008A CA 2030008 A1 CA2030008 A1 CA 2030008A1
Authority
CA
Canada
Prior art keywords
light
absorption layer
receiving device
detecting regions
response
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2030008A
Other languages
English (en)
Other versions
CA2030008C (fr
Inventor
Ichiro Tonai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2030008A1 publication Critical patent/CA2030008A1/fr
Application granted granted Critical
Publication of CA2030008C publication Critical patent/CA2030008C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/107Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4249Packages, e.g. shape, construction, internal or external details comprising arrays of active devices and fibres
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4292Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
CA002030008A 1989-11-14 1990-11-14 Dispositif recepteur de lumiere Expired - Fee Related CA2030008C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP296865/1989 1989-11-14
JP1296865A JPH03156980A (ja) 1989-11-14 1989-11-14 受光素子

Publications (2)

Publication Number Publication Date
CA2030008A1 true CA2030008A1 (fr) 1991-05-15
CA2030008C CA2030008C (fr) 1997-03-04

Family

ID=17839164

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002030008A Expired - Fee Related CA2030008C (fr) 1989-11-14 1990-11-14 Dispositif recepteur de lumiere

Country Status (6)

Country Link
US (1) US6114737A (fr)
EP (1) EP0428159B1 (fr)
JP (1) JPH03156980A (fr)
KR (1) KR910010756A (fr)
CA (1) CA2030008C (fr)
DE (1) DE69033259T2 (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2088612C (fr) * 1992-02-03 2003-04-15 Yoshiki Kuhara Detecteur de lumiere a semiconducteur
WO1994010594A1 (fr) * 1992-10-30 1994-05-11 Klaus Wolter Dispositif de transmission de donnees
KR100322579B1 (ko) * 1998-10-08 2002-03-08 윤종용 광 커넥터 모듈
EP1077384A4 (fr) * 1999-02-05 2005-02-09 Furukawa Electric Co Ltd Structure de raccordement collectif d'une pluralite de connecteurs optiques, dispositif d'agencement de connecteurs optiques et adaptateur pour connecteurs optiques
JP3959662B2 (ja) * 1999-03-23 2007-08-15 セイコーエプソン株式会社 光信号伝送装置およびその製造方法
US6774578B2 (en) * 2000-09-19 2004-08-10 Semiconductor Energy Laboratory Co., Ltd. Self light emitting device and method of driving thereof
US6844607B2 (en) 2000-10-06 2005-01-18 The Furukawa Electric Co., Ltd. Photodiode array device, a photodiode module, and a structure for connecting the photodiode module and an optical connector
JP2002185032A (ja) * 2000-10-06 2002-06-28 Furukawa Electric Co Ltd:The 受光アレイ素子、受光モジュール及び受光モジュールと光コネクタとの接続構造
JP2003282939A (ja) * 2002-03-26 2003-10-03 Oki Degital Imaging:Kk 半導体発光装置及びその製造方法
FR2855655B1 (fr) * 2003-05-26 2005-08-19 Commissariat Energie Atomique Detecteur de rayonnement infrarouge photovoltaique a grille conductrice independante et tridimensionnelle
DE102007037020B3 (de) * 2007-08-06 2008-08-21 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Photodiode
US8039780B2 (en) * 2009-04-08 2011-10-18 Sumitomo Electric Industries, Ltd. Photodiode array and image pickup device using the same
US8247881B2 (en) * 2009-04-27 2012-08-21 University Of Seoul Industry Cooperation Foundation Photodiodes with surface plasmon couplers
DE102013018789B4 (de) * 2012-11-29 2025-03-06 Infineon Technologies Ag Steuern lichterzeugter Ladungsträger
FR3006105B1 (fr) * 2013-05-22 2016-09-09 New Imaging Tech Matrice de photodiode a absorption reglable de charge
US10854646B2 (en) 2018-10-19 2020-12-01 Attollo Engineering, LLC PIN photodetector

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044373A (en) * 1967-11-13 1977-08-23 Hitachi, Ltd. IGFET with gate protection diode and antiparasitic isolation means
US3703669A (en) * 1971-08-12 1972-11-21 Motorola Inc Photocurrent cross talk isolation
JPS5213918B2 (fr) * 1972-02-02 1977-04-18
US3845296A (en) * 1973-10-10 1974-10-29 Us Army Photosensitive junction controlled electron emitter
EP0228712B1 (fr) * 1986-01-06 1995-08-09 Sel Semiconductor Energy Laboratory Co., Ltd. Dispositif de conversion photo-électrique à haute vitesse de réponse et méthode pour sa fabrication

Also Published As

Publication number Publication date
US6114737A (en) 2000-09-05
CA2030008C (fr) 1997-03-04
KR910010756A (ko) 1991-06-29
DE69033259D1 (de) 1999-09-30
EP0428159A1 (fr) 1991-05-22
DE69033259T2 (de) 2000-01-05
JPH03156980A (ja) 1991-07-04
EP0428159B1 (fr) 1999-08-25

Similar Documents

Publication Publication Date Title
CA2030008A1 (fr) Dispositif recepteur de lumiere
AU543213B2 (en) Photovoltaic device having incident radiation directing means
ATE167332T1 (de) Photovoltaische vorrichtung
CA2112736A1 (fr) Dispositif de saisie d'images
EP0937266A4 (fr) Detecteur de radiations a semi-conducteur, a collection de charge renforcee
DE69010737D1 (de) Photoelektrische Wandlungsvorrichtung.
AU2268092A (en) Photovoltaic device having an improved collector grid
AU1488383A (en) Pin semiconductor photoelectric conversion device
SG48065A1 (en) Sensor chip and photoelectric conversion apparatus using the same
EP0484923A3 (en) Semiconductor wavelength conversion device
EP0406696A3 (en) Heterojunction photodiode array
FR2431770A1 (fr) Photodiode avalanche a semi-conducteurs de structure heterogene
DE68922117D1 (de) Halbleiterphotodiode.
GB9003900D0 (en) Semiconductor device having matrix wiring section,and semiconductor device using the same and having photoelectric conversion function
EP0436335A3 (en) Photoelectric converting device
DK666288D0 (da) Solstraaleopsamlende anordning
DK233289D0 (da) Solstraaleopsamlende anordning
AU562706B2 (en) Solar photoelectric module
DE3376712D1 (en) Photodiode and photodetector comprising an integrated series of photodiodes
GB2187330B (en) Semiconductor laser array device
GB2306048B (en) High output semiconductor laser element having robust electrode structure
AU2165883A (en) Photoelectric conversion device
JPS6463886A (en) Radiation sensor
GB8723396D0 (en) Semiconductor laser array device
EP0849808A3 (fr) Dispositif de conversion photoélectrique

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed