CA2033246C - Dispositif optique a semiconducteur - Google Patents

Dispositif optique a semiconducteur

Info

Publication number: CA2033246C
Authority: CA; Canada
Prior art keywords: stripe; layer; semi; mesa structure; insulating
Prior art date: 1989-12-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CA 2033246

Other languages

English (en)

Inventor

Akira Ajisawa

Tomoji Terakado

Masayuki Yamaguchi

Keiro Komatsu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-12-27

Filing date

1990-12-27

Publication date

1995-05-30

1990-12-27 Application filed by NEC Corp filed Critical NEC Corp

1995-05-30 Application granted granted Critical

1995-05-30 Publication of CA2033246C publication Critical patent/CA2033246C/fr

2010-12-27 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

230000003287 optical effect Effects 0.000 title claims abstract description 149
239000004065 semiconductor Substances 0.000 title claims abstract description 49
238000005253 cladding Methods 0.000 claims abstract description 69
239000000758 substrate Substances 0.000 claims abstract description 66
230000031700 light absorption Effects 0.000 claims abstract description 47
230000005684 electric field Effects 0.000 claims description 13
239000000203 mixture Substances 0.000 claims description 7
230000008878 coupling Effects 0.000 claims 1
238000010168 coupling process Methods 0.000 claims 1
238000005859 coupling reaction Methods 0.000 claims 1
230000003247 decreasing effect Effects 0.000 abstract description 10
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 39
229910052681 coesite Inorganic materials 0.000 description 21
229910052906 cristobalite Inorganic materials 0.000 description 21
239000000377 silicon dioxide Substances 0.000 description 21
229910052682 stishovite Inorganic materials 0.000 description 21
229910052905 tridymite Inorganic materials 0.000 description 21
238000005530 etching Methods 0.000 description 20
238000000034 method Methods 0.000 description 20
235000012239 silicon dioxide Nutrition 0.000 description 18
229910000530 Gallium indium arsenide Inorganic materials 0.000 description 11
238000004519 manufacturing process Methods 0.000 description 11
239000000463 material Substances 0.000 description 9
239000004642 Polyimide Substances 0.000 description 8
229920001721 polyimide Polymers 0.000 description 8
230000000694 effects Effects 0.000 description 7
238000000206 photolithography Methods 0.000 description 6
238000010521 absorption reaction Methods 0.000 description 5
230000003068 static effect Effects 0.000 description 5
230000005540 biological transmission Effects 0.000 description 4
238000004891 communication Methods 0.000 description 4
238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
229920002120 photoresistant polymer Polymers 0.000 description 4
229910001218 Gallium arsenide Inorganic materials 0.000 description 3
229910021417 amorphous silicon Inorganic materials 0.000 description 3
238000012538 light obscuration Methods 0.000 description 3
238000000927 vapour-phase epitaxy Methods 0.000 description 3
229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
238000007747 plating Methods 0.000 description 2
238000000926 separation method Methods 0.000 description 2
239000000126 substance Substances 0.000 description 2
229910004205 SiNX Inorganic materials 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
229910052793 cadmium Inorganic materials 0.000 description 1
238000004364 calculation method Methods 0.000 description 1
238000003486 chemical etching Methods 0.000 description 1
238000010276 construction Methods 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
230000006866 deterioration Effects 0.000 description 1
239000003989 dielectric material Substances 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000005669 field effect Effects 0.000 description 1
150000004678 hydrides Chemical class 0.000 description 1
239000012535 impurity Substances 0.000 description 1
230000010354 integration Effects 0.000 description 1
238000010884 ion-beam technique Methods 0.000 description 1
239000002184 metal Substances 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
238000002156 mixing Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000003071 parasitic effect Effects 0.000 description 1
238000002161 passivation Methods 0.000 description 1
238000005498 polishing Methods 0.000 description 1
230000000644 propagated effect Effects 0.000 description 1
230000005701 quantum confined stark effect Effects 0.000 description 1
238000004528 spin coating Methods 0.000 description 1
238000004544 sputter deposition Methods 0.000 description 1
238000007669 thermal treatment Methods 0.000 description 1
238000007740 vapor deposition Methods 0.000 description 1
229910052725 zinc Inorganic materials 0.000 description 1

Landscapes

Semiconductor Lasers (AREA)
Optical Integrated Circuits (AREA)

CA 2033246 1989-12-27 1990-12-27 Dispositif optique a semiconducteur Expired - Fee Related CA2033246C (fr)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP1-340101		1989-12-27
JP1340101A JP2540964B2 (ja)	1989-12-27	1989-12-27	光変調器と集積型光変調器と光検出器及びその製造方法

Publications (1)

Publication Number	Publication Date
CA2033246C true CA2033246C (fr)	1995-05-30

Family

ID=18333729

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA 2033246 Expired - Fee Related CA2033246C (fr)	1989-12-27	1990-12-27	Dispositif optique a semiconducteur

Country Status (2)

Country	Link
JP (1)	JP2540964B2 (fr)
CA (1)	CA2033246C (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2726204B2 (ja) *	1992-09-24	1998-03-11	日本電信電話株式会社	半導体導波路型素子の製造法
JPH11220205A (ja) *	1998-01-30	1999-08-10	Sharp Corp	半導体レーザ素子及びその製造方法
JP4828018B2 (ja) *	2000-11-06	2011-11-30	三菱電機株式会社	光変調器およびその製造方法並びに光半導体装置
WO2009078248A1 (fr)	2007-12-14	2009-06-25	Nec Corporation	Dispositif optique de type à guide d'ondes
CN103430084A (zh)	2011-03-17	2013-12-04	日本碍子株式会社	光调制元件
JP5906593B2 (ja) *	2011-06-27	2016-04-20	富士通株式会社	光半導体集積素子の製造方法

1989
- 1989-12-27 JP JP1340101A patent/JP2540964B2/ja not_active Expired - Lifetime
1990
- 1990-12-27 CA CA 2033246 patent/CA2033246C/fr not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JPH03198025A (ja)	1991-08-29
JP2540964B2 (ja)	1996-10-09

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Legal Events

Date	Code	Title	Description
1990-12-27	EEER	Examination request
2009-12-29	MKLA	Lapsed