CA2054597A1 - Circuit supraconducteur et sa methode de fabrication - Google Patents

Circuit supraconducteur et sa methode de fabrication

Info

Publication number
CA2054597A1
CA2054597A1 CA2054597A CA2054597A CA2054597A1 CA 2054597 A1 CA2054597 A1 CA 2054597A1 CA 2054597 A CA2054597 A CA 2054597A CA 2054597 A CA2054597 A CA 2054597A CA 2054597 A1 CA2054597 A1 CA 2054597A1
Authority
CA
Canada
Prior art keywords
different
superconducting
thin film
crystal orientation
superconducting circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2054597A
Other languages
English (en)
Other versions
CA2054597C (fr
Inventor
Hiroshi Inada
Takao Nakamura
Michitomo Iiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2294294A external-priority patent/JP2703403B2/ja
Priority claimed from JP2294295A external-priority patent/JP2703404B2/ja
Application filed by Individual filed Critical Individual
Publication of CA2054597A1 publication Critical patent/CA2054597A1/fr
Application granted granted Critical
Publication of CA2054597C publication Critical patent/CA2054597C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661Processes performed after copper oxide formation, e.g. patterning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44Conductive materials thereof
    • H10W20/4484Superconducting materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66Conductive materials thereof
    • H10W70/668Superconducting materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/70High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701Coated or thin film device, i.e. active or passive
    • Y10S505/703Microelectronic device with superconducting conduction line

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CA002054597A 1990-10-31 1991-10-31 Circuit supraconducteur et sa methode de fabrication Expired - Fee Related CA2054597C (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP294294/1990 1990-10-31
JP2294294A JP2703403B2 (ja) 1990-10-31 1990-10-31 超電導配線の作製方法
JP2294295A JP2703404B2 (ja) 1990-10-31 1990-10-31 超電導回路とその作製方法
JP294295/1990 1990-10-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CA002185936A Division CA2185936A1 (fr) 1990-10-31 1991-10-31 Procede de fabrication de circuit supraconducteur

Publications (2)

Publication Number Publication Date
CA2054597A1 true CA2054597A1 (fr) 1992-05-01
CA2054597C CA2054597C (fr) 1997-08-19

Family

ID=26559765

Family Applications (2)

Application Number Title Priority Date Filing Date
CA002054597A Expired - Fee Related CA2054597C (fr) 1990-10-31 1991-10-31 Circuit supraconducteur et sa methode de fabrication
CA002185936A Abandoned CA2185936A1 (fr) 1990-10-31 1991-10-31 Procede de fabrication de circuit supraconducteur

Family Applications After (1)

Application Number Title Priority Date Filing Date
CA002185936A Abandoned CA2185936A1 (fr) 1990-10-31 1991-10-31 Procede de fabrication de circuit supraconducteur

Country Status (4)

Country Link
US (1) US5672569A (fr)
EP (2) EP0484248B1 (fr)
CA (2) CA2054597C (fr)
DE (1) DE69124072T2 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5593950A (en) * 1992-07-28 1997-01-14 Nippon Telegraph & Telephone Corporation Lattice matching super conducting device with a- and c- axes
JP2822953B2 (ja) * 1995-09-14 1998-11-11 日本電気株式会社 超伝導回路の製造方法
US6022832A (en) 1997-09-23 2000-02-08 American Superconductor Corporation Low vacuum vapor process for producing superconductor articles with epitaxial layers
US6027564A (en) * 1997-09-23 2000-02-22 American Superconductor Corporation Low vacuum vapor process for producing epitaxial layers
US6428635B1 (en) 1997-10-01 2002-08-06 American Superconductor Corporation Substrates for superconductors
US6458223B1 (en) 1997-10-01 2002-10-01 American Superconductor Corporation Alloy materials
US6475311B1 (en) 1999-03-31 2002-11-05 American Superconductor Corporation Alloy materials
US10158061B2 (en) 2013-11-12 2018-12-18 Varian Semiconductor Equipment Associates, Inc Integrated superconductor device and method of fabrication
US9947441B2 (en) * 2013-11-12 2018-04-17 Varian Semiconductor Equipment Associates, Inc. Integrated superconductor device and method of fabrication

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5096882A (en) * 1987-04-08 1992-03-17 Hitachi, Ltd. Process for controlling oxygen content of superconductive oxide, superconductive device and process for production thereof
JPS63314850A (ja) * 1987-06-18 1988-12-22 Fujitsu Ltd 半導体装置
JPH079905B2 (ja) * 1987-07-15 1995-02-01 シャープ株式会社 半導体装置の配線方法
US5183800A (en) * 1987-07-15 1993-02-02 Sharp Kabushiki Kaisha Interconnection method for semiconductor device comprising a high-temperature superconductive material
JPS6435971A (en) * 1987-07-30 1989-02-07 Mitsubishi Electric Corp Superconductor device
DE3726016A1 (de) * 1987-08-05 1989-02-16 Siemens Ag Verfahren zur herstellung eines schichtartigen aufbaus aus einem oxidkeramischen supralteitermaterial
US5079216A (en) * 1987-09-04 1992-01-07 Henty David L Composite high temperature superconductor and substrate structure
JPS6469064A (en) * 1987-09-10 1989-03-15 Nec Corp Manufacture of oxide superconducting wiring
JPH01171246A (ja) * 1987-12-25 1989-07-06 Mitsubishi Metal Corp 超伝導体配線の形成方法
CA1336567C (fr) * 1988-02-03 1995-08-08 Franz Joseph Himpsel Epitaxie sur silicium de supraconducteurs a t- elevee
EP0342039B1 (fr) * 1988-05-11 1994-08-31 Canon Kabushiki Kaisha Dispositif Josephson et procédé pour sa fabrication
JPH0223674A (ja) * 1988-07-12 1990-01-25 Matsushita Electric Ind Co Ltd 配線の接続方法
EP0358879A3 (fr) * 1988-09-13 1991-02-27 Hewlett-Packard Company Procédé pour faire des interconnexions à haute densité
JPH0355889A (ja) * 1989-07-25 1991-03-11 Furukawa Electric Co Ltd:The 超電導多層回路の製造方法
US5236896A (en) * 1990-10-08 1993-08-17 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material
JPH04321285A (ja) * 1991-04-19 1992-11-11 Sanyo Electric Co Ltd 超電導電磁波検出素子及びその作製方法

Also Published As

Publication number Publication date
EP0484248A2 (fr) 1992-05-06
CA2054597C (fr) 1997-08-19
EP0484248B1 (fr) 1997-01-08
EP0671764A2 (fr) 1995-09-13
DE69124072D1 (de) 1997-02-20
EP0671764A3 (fr) 1995-10-11
CA2185936A1 (fr) 1992-05-01
US5672569A (en) 1997-09-30
EP0484248A3 (en) 1992-08-26
DE69124072T2 (de) 1997-08-07

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