CA2106694A1 - Hermetic protection of integrated circuits - Google Patents

Hermetic protection of integrated circuits

Info

Publication number
CA2106694A1
CA2106694A1 CA002106694A CA2106694A CA2106694A1 CA 2106694 A1 CA2106694 A1 CA 2106694A1 CA 002106694 A CA002106694 A CA 002106694A CA 2106694 A CA2106694 A CA 2106694A CA 2106694 A1 CA2106694 A1 CA 2106694A1
Authority
CA
Canada
Prior art keywords
silicon
bond pads
containing ceramics
circuit
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002106694A
Other languages
English (en)
French (fr)
Inventor
Keith W. Michael
Keith Winton Michael
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2106694A1 publication Critical patent/CA2106694A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/147—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being multilayered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Formation Of Insulating Films (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
CA002106694A 1992-09-23 1993-09-22 Hermetic protection of integrated circuits Abandoned CA2106694A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/948,570 1992-09-23
US07/948,570 US5825078A (en) 1992-09-23 1992-09-23 Hermetic protection for integrated circuits

Publications (1)

Publication Number Publication Date
CA2106694A1 true CA2106694A1 (en) 1994-03-24

Family

ID=25488012

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002106694A Abandoned CA2106694A1 (en) 1992-09-23 1993-09-22 Hermetic protection of integrated circuits

Country Status (6)

Country Link
US (1) US5825078A (2)
EP (1) EP0589678A3 (2)
JP (1) JPH06204282A (2)
KR (1) KR940008030A (2)
CA (1) CA2106694A1 (2)
TW (1) TW232095B (2)

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EP0720223B1 (en) * 1994-12-30 2003-03-26 STMicroelectronics S.r.l. Process for the production of a semiconductor device having better interface adhesion between dielectric layers
US5960306A (en) * 1995-12-15 1999-09-28 Motorola, Inc. Process for forming a semiconductor device
US5693565A (en) * 1996-07-15 1997-12-02 Dow Corning Corporation Semiconductor chips suitable for known good die testing
US5956605A (en) * 1996-09-20 1999-09-21 Micron Technology, Inc. Use of nitrides for flip-chip encapsulation
DE19718517C2 (de) * 1997-05-02 2000-08-10 Daimler Chrysler Ag Verfahren zum Aufbringen von Diamant auf einem mikroelektronischen Bauteil
DE19718618C2 (de) * 1997-05-02 1999-12-02 Daimler Chrysler Ag Komposit-Struktur mit einem mehrere mikroelektronische Bauteile und eine Diamantschicht aufweisenden Wachstums-Substrat sowie Verfahren zur Herstellung der Komposit-Struktur
US6150719A (en) * 1997-07-28 2000-11-21 General Electric Company Amorphous hydrogenated carbon hermetic structure and fabrication method
US6046101A (en) * 1997-12-31 2000-04-04 Intel Corporation Passivation technology combining improved adhesion in passivation and a scribe street without passivation
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6287990B1 (en) 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
US6660656B2 (en) 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
US6159871A (en) 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6352940B1 (en) * 1998-06-26 2002-03-05 Intel Corporation Semiconductor passivation deposition process for interfacial adhesion
FR2782388B1 (fr) * 1998-08-11 2000-11-03 Trixell Sas Detecteur de rayonnement a l'etat solide a duree de vie accrue
US6605526B1 (en) 2000-03-16 2003-08-12 International Business Machines Corporation Wirebond passivation pad connection using heated capillary
US6263930B1 (en) * 2000-04-11 2001-07-24 Scott A. Wiley Stump grinder
US7127286B2 (en) * 2001-02-28 2006-10-24 Second Sight Medical Products, Inc. Implantable device using ultra-nanocrystalline diamond
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
US6777349B2 (en) * 2002-03-13 2004-08-17 Novellus Systems, Inc. Hermetic silicon carbide
US20040102022A1 (en) * 2002-11-22 2004-05-27 Tongbi Jiang Methods of fabricating integrated circuitry
US20060121717A1 (en) * 2004-12-02 2006-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding structure and fabrication thereof
US7612457B2 (en) * 2007-06-21 2009-11-03 Infineon Technologies Ag Semiconductor device including a stress buffer
JP5735522B2 (ja) 2009-10-27 2015-06-17 シルコテック コーポレイション 化学気相成長コーティング、物品、及び方法
WO2012047945A2 (en) 2010-10-05 2012-04-12 Silcotek Corp. Wear resistant coating, article, and method
US9340880B2 (en) 2009-10-27 2016-05-17 Silcotek Corp. Semiconductor fabrication process
US9975143B2 (en) 2013-05-14 2018-05-22 Silcotek Corp. Chemical vapor deposition functionalization
US11292924B2 (en) 2014-04-08 2022-04-05 Silcotek Corp. Thermal chemical vapor deposition coated article and process
US9915001B2 (en) 2014-09-03 2018-03-13 Silcotek Corp. Chemical vapor deposition process and coated article
US10316408B2 (en) 2014-12-12 2019-06-11 Silcotek Corp. Delivery device, manufacturing system and process of manufacturing
US10876206B2 (en) 2015-09-01 2020-12-29 Silcotek Corp. Thermal chemical vapor deposition coating
US10323321B1 (en) 2016-01-08 2019-06-18 Silcotek Corp. Thermal chemical vapor deposition process and coated article
US10487403B2 (en) 2016-12-13 2019-11-26 Silcotek Corp Fluoro-containing thermal chemical vapor deposition process and article
US11161324B2 (en) 2017-09-13 2021-11-02 Silcotek Corp. Corrosion-resistant coated article and thermal chemical vapor deposition coating process
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth
US12473635B2 (en) 2020-06-03 2025-11-18 Silcotek Corp. Dielectric article

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4001872A (en) * 1973-09-28 1977-01-04 Rca Corporation High-reliability plastic-packaged semiconductor device
JPS5748247A (en) * 1980-09-05 1982-03-19 Oki Electric Ind Co Ltd Semiconductor integrated circuit device
JPS58166748A (ja) * 1982-03-29 1983-10-01 Hitachi Ltd 半導体装置
US4622576A (en) * 1984-10-22 1986-11-11 National Semiconductor Corporation Conductive non-metallic self-passivating non-corrodable IC bonding pads
US4972251A (en) * 1985-08-14 1990-11-20 Fairchild Camera And Instrument Corp. Multilayer glass passivation structure and method for forming the same
GB2184288A (en) * 1985-12-16 1987-06-17 Nat Semiconductor Corp Oxidation inhibition of copper bonding pads using palladium
US5134460A (en) * 1986-08-11 1992-07-28 International Business Machines Corporation Aluminum bump, reworkable bump, and titanium nitride structure for tab bonding
JPS6461934A (en) * 1987-09-02 1989-03-08 Nippon Denso Co Semiconductor device and manufacture thereof
US4849296A (en) * 1987-12-28 1989-07-18 Dow Corning Corporation Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia
FR2625839B1 (fr) * 1988-01-13 1991-04-26 Sgs Thomson Microelectronics Procede de passivation d'un circuit integre
US4986878A (en) * 1988-07-19 1991-01-22 Cypress Semiconductor Corp. Process for improved planarization of the passivation layers for semiconductor devices
US5104820A (en) * 1989-07-07 1992-04-14 Irvine Sensors Corporation Method of fabricating electronic circuitry unit containing stacked IC layers having lead rerouting
US5177589A (en) * 1990-01-29 1993-01-05 Hitachi, Ltd. Refractory metal thin film having a particular step coverage factor and ratio of surface roughness
JP2814009B2 (ja) * 1990-06-05 1998-10-22 三菱電機株式会社 半導体装置の製造方法
US5130275A (en) * 1990-07-02 1992-07-14 Digital Equipment Corp. Post fabrication processing of semiconductor chips
US5117273A (en) * 1990-11-16 1992-05-26 Sgs-Thomson Microelectronics, Inc. Contact for integrated circuits
JP2593965B2 (ja) * 1991-01-29 1997-03-26 三菱電機株式会社 半導体装置
US5136364A (en) * 1991-06-12 1992-08-04 National Semiconductor Corporation Semiconductor die sealing

Also Published As

Publication number Publication date
JPH06204282A (ja) 1994-07-22
KR940008030A (ko) 1994-04-28
EP0589678A2 (en) 1994-03-30
TW232095B (2) 1994-10-11
EP0589678A3 (en) 1995-04-12
US5825078A (en) 1998-10-20

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Legal Events

Date Code Title Description
FZDE Discontinued