CA2132986C - Dispositifs optiques a semiconducteur et leurs methodes de fabrication - Google Patents

Dispositifs optiques a semiconducteur et leurs methodes de fabrication Download PDF

Info

Publication number
CA2132986C
CA2132986C CA002132986A CA2132986A CA2132986C CA 2132986 C CA2132986 C CA 2132986C CA 002132986 A CA002132986 A CA 002132986A CA 2132986 A CA2132986 A CA 2132986A CA 2132986 C CA2132986 C CA 2132986C
Authority
CA
Canada
Prior art keywords
semiconductor
confining
aluminum
layer
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CA002132986A
Other languages
English (en)
Other versions
CA2132986A1 (fr
Inventor
Nick Holonyak Jr.
Fred A. Kish
Stephen J. Caracci
Nada Elzein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Illinois System
Original Assignee
University of Illinois System
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/860,454 external-priority patent/US5327448A/en
Priority claimed from US07/927,822 external-priority patent/US5353295A/en
Application filed by University of Illinois System filed Critical University of Illinois System
Publication of CA2132986A1 publication Critical patent/CA2132986A1/fr
Application granted granted Critical
Publication of CA2132986C publication Critical patent/CA2132986C/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6312—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/101—Curved waveguide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
CA002132986A 1992-03-30 1993-03-26 Dispositifs optiques a semiconducteur et leurs methodes de fabrication Expired - Lifetime CA2132986C (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US07/860,454 US5327448A (en) 1992-03-30 1992-03-30 Semiconductor devices and techniques for controlled optical confinement
US860,454 1992-03-30
US927,822 1992-08-10
US07/927,822 US5353295A (en) 1992-08-10 1992-08-10 Semiconductor laser device with coupled cavities
PCT/US1993/002844 WO1993020581A1 (fr) 1992-03-30 1993-03-26 Dispositifs et techniques optiques a semi-conducteur

Publications (2)

Publication Number Publication Date
CA2132986A1 CA2132986A1 (fr) 1993-10-14
CA2132986C true CA2132986C (fr) 2004-06-22

Family

ID=27127572

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002132986A Expired - Lifetime CA2132986C (fr) 1992-03-30 1993-03-26 Dispositifs optiques a semiconducteur et leurs methodes de fabrication

Country Status (5)

Country Link
EP (1) EP0634052A4 (fr)
JP (2) JP3726240B2 (fr)
AU (1) AU3936893A (fr)
CA (1) CA2132986C (fr)
WO (1) WO1993020581A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5400354A (en) * 1994-02-08 1995-03-21 Ludowise; Michael Laminated upper cladding structure for a light-emitting device
US5550081A (en) * 1994-04-08 1996-08-27 Board Of Trustees Of The University Of Illinois Method of fabricating a semiconductor device by oxidizing aluminum-bearing 1H-V semiconductor in water vapor environment
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array
US7561770B2 (en) * 2007-07-30 2009-07-14 Hewlett-Packard Development Company, L.P. Microresonator systems and methods of fabricating the same
GB2478602B (en) * 2010-03-12 2014-09-03 Toshiba Res Europ Ltd A semiconductor device and method of manufacturing a semiconductor device
US11658453B2 (en) * 2018-01-29 2023-05-23 Ronald LaComb Concentric cylindrical circumferential laser
FR3078834B1 (fr) * 2018-03-08 2020-03-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif d’emission lumineuse comportant au moins un vcsel et une lentille de diffusion
CN115799990A (zh) * 2022-11-14 2023-03-14 中国科学院半导体研究所 一种高铝组分的氧化限制半导体激光器及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4291327A (en) * 1978-08-28 1981-09-22 Bell Telephone Laboratories, Incorporated MOS Devices

Also Published As

Publication number Publication date
JPH07505503A (ja) 1995-06-15
CA2132986A1 (fr) 1993-10-14
JP2003224330A (ja) 2003-08-08
WO1993020581A1 (fr) 1993-10-14
EP0634052A1 (fr) 1995-01-18
AU3936893A (en) 1993-11-08
EP0634052A4 (fr) 1997-08-27
JP3726240B2 (ja) 2005-12-14

Similar Documents

Publication Publication Date Title
US5425043A (en) Semiconductor laser
US5403775A (en) Method of making semiconductor devices and techniques for controlled optical confinement
US7026182B2 (en) Semiconductor device, semiconductor laser, their manufacturing methods and etching methods
US5926493A (en) Optical semiconductor device with diffraction grating structure
JPH11307866A (ja) 窒化物系化合物半導体レーザ素子
JPH05275798A (ja) レーザダイオード
CA2132986C (fr) Dispositifs optiques a semiconducteur et leurs methodes de fabrication
US5398255A (en) Semiconductor laser having buried structure on p-InP substrate
JP3204474B2 (ja) 利得結合分布帰還型半導体レーザとその作製方法
Ou et al. High power cw operation of GaAs/GaAlAs surface‐emitting lasers mounted in the junction‐up configuration
US5396511A (en) Semiconductor laser apparatus with curved waveguide
US6687276B2 (en) Surface emitting semiconductor laser
US6552358B2 (en) High power single mode laser and method of fabrication
KR100277561B1 (ko) 반도체 레이저 장치
US7288783B2 (en) Optical semiconductor device and method for fabricating the same
JPH03268379A (ja) 半導体レーザ・チップおよびその製造方法
US4811354A (en) Semiconductor laser
JPH04221872A (ja) 半導体波長可変装置
JP2804062B2 (ja) 半導体レーザ装置及びその製造方法
JPH11233874A (ja) 半導体レーザ装置およびその製造方法
JP2626570B2 (ja) 半導体レーザ素子の製造方法
Ou et al. Surface‐emitting lasers with optical cavity along the [111] direction
JPS6332979A (ja) 半導体レ−ザ
JPH03185889A (ja) 半導体レーザ素子およびその製造方法
JP2002204030A (ja) 導波路型光素子

Legal Events

Date Code Title Description
EEER Examination request