CA2141034C - Dispositif et structure a l'antimoniure d'indium (insb) pour la detection de radiations infrarouges, visibles et ultraviolettes - Google Patents
Dispositif et structure a l'antimoniure d'indium (insb) pour la detection de radiations infrarouges, visibles et ultraviolettesInfo
- Publication number
- CA2141034C CA2141034C CA002141034A CA2141034A CA2141034C CA 2141034 C CA2141034 C CA 2141034C CA 002141034 A CA002141034 A CA 002141034A CA 2141034 A CA2141034 A CA 2141034A CA 2141034 C CA2141034 C CA 2141034C
- Authority
- CA
- Canada
- Prior art keywords
- substrate
- passivation layer
- radiation
- light receiving
- receiving surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 31
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000002161 passivation Methods 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 7
- 229910052738 indium Inorganic materials 0.000 claims abstract description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000001228 spectrum Methods 0.000 claims description 12
- 230000004044 response Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 5
- 229910007277 Si3 N4 Inorganic materials 0.000 claims description 4
- 238000005286 illumination Methods 0.000 claims description 4
- 230000003595 spectral effect Effects 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 229910001439 antimony ion Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 229960000443 hydrochloric acid Drugs 0.000 description 1
- 235000011167 hydrochloric acid Nutrition 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
- H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
Landscapes
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
La surface (22) envers ou photoréceptrice du substrat (12) d'un dispositif photodétecteur (10) à l'antimoniure d'indium (InSb) est nettoyée de manière à éliminer tous les oxydes natifs d'indium et d'antimoine dudit substrat. Une couche de passivation (26) est ensuite formée sur la surface (22) d'un matériau tel que du dioxyde de silicium, du sous-oxyde de silicium et/ou du nitrure de silicium qui ne réagit pas avec InSb pour former une structure qui comporterait des pièges de porteurs et provoquerait la formation d'un arc. Ledit dispositif (10) est capable de détecter des rayonnements sur une plage spectrale continue comprenant les domaines de l'infrarouge, du visible et de l'ultraviolet.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6889793A | 1993-05-28 | 1993-05-28 | |
| US068,897 | 1993-05-28 | ||
| PCT/US1994/006038 WO1994028587A1 (fr) | 1993-05-28 | 1994-05-27 | DISPOSITIF ET STRUCTURE PHOTODETECTEURS A L'ANTIMONIURE D'INDIUM (InSb) POUR LES RAYONNENENTS INFRAROUGE, VISIBLE ET ULTRAVIOLET |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2141034A1 CA2141034A1 (fr) | 1994-12-08 |
| CA2141034C true CA2141034C (fr) | 1999-07-27 |
Family
ID=22085408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002141034A Expired - Fee Related CA2141034C (fr) | 1993-05-28 | 1994-05-27 | Dispositif et structure a l'antimoniure d'indium (insb) pour la detection de radiations infrarouges, visibles et ultraviolettes |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0653106A1 (fr) |
| JP (1) | JP2998994B2 (fr) |
| CA (1) | CA2141034C (fr) |
| WO (1) | WO1994028587A1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2461914C1 (ru) * | 2011-06-14 | 2012-09-20 | Открытое акционерное общество "Московский завод "САПФИР" | Планарный фотодиод на антимониде индия |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4286277A (en) * | 1977-11-22 | 1981-08-25 | The United States Of America As Represented By The Secretary Of The Army | Planar indium antimonide diode array and method of manufacture |
| JPS6237927A (ja) * | 1985-08-13 | 1987-02-18 | Tech Res & Dev Inst Of Japan Def Agency | ＩｎＳｂ半導体デバイスの製造方法 |
| DE3617229C2 (de) * | 1986-05-22 | 1997-04-30 | Aeg Infrarot Module Gmbh | Strahlungsdetektor |
| CA2070708C (fr) * | 1991-08-08 | 1997-04-29 | Ichiro Kasai | Detecteur de lumieres visible et infrarouge a antimoniure d'indium comportant une surface receptrice sans clignotement |
-
1994
- 1994-05-27 CA CA002141034A patent/CA2141034C/fr not_active Expired - Fee Related
- 1994-05-27 WO PCT/US1994/006038 patent/WO1994028587A1/fr not_active Ceased
- 1994-05-27 EP EP94919282A patent/EP0653106A1/fr not_active Withdrawn
- 1994-05-27 JP JP7500998A patent/JP2998994B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2998994B2 (ja) | 2000-01-17 |
| EP0653106A1 (fr) | 1995-05-17 |
| JPH08500940A (ja) | 1996-01-30 |
| CA2141034A1 (fr) | 1994-12-08 |
| WO1994028587A1 (fr) | 1994-12-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |