CA2173932A1 - Procede de fabrication de matrices de microelectrodes - Google Patents

Procede de fabrication de matrices de microelectrodes

Info

Publication number: CA2173932A1
Authority: CA; Canada
Prior art keywords: top surface; microelectrodes; array; substrate; metal
Prior art date: 1996-04-11
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

CA 2173932

Other languages

English (en)

Inventor

Gilles Y. Champagne

Michel Ladouceur

Jean Chevalet

My Ali El Khakani

Mohamed Chaker

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Institut National de La Recherche Scientifique INRS

Hydro Quebec

Centre National de la Recherche Scientifique CNRS

Original Assignee

Institut National de La Recherche Scientifique INRS

Hydro Quebec

Centre National de la Recherche Scientifique CNRS

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1996-04-11

Filing date

1996-04-11

Publication date

1997-10-12

1996-04-11 Application filed by Institut National de La Recherche Scientifique INRS, Hydro Quebec, Centre National de la Recherche Scientifique CNRS filed Critical Institut National de La Recherche Scientifique INRS

1996-04-11 Priority to CA 2173932 priority Critical patent/CA2173932A1/fr

1997-04-08 Priority to JP09535704A priority patent/JP2000517413A/ja

1997-04-08 Priority to AU22837/97A priority patent/AU2283797A/en

1997-04-08 Priority to PCT/CA1997/000236 priority patent/WO1997038301A1/fr

1997-10-12 Publication of CA2173932A1 publication Critical patent/CA2173932A1/fr

Status Abandoned legal-status Critical Current

Links

238000000034 method Methods 0.000 title claims abstract description 68
238000004519 manufacturing process Methods 0.000 title claims abstract description 21
239000000758 substrate Substances 0.000 claims abstract description 59
229910052751 metal Inorganic materials 0.000 claims abstract description 38
239000002184 metal Substances 0.000 claims abstract description 38
238000000608 laser ablation Methods 0.000 claims abstract description 17
229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 13
150000002739 metals Chemical class 0.000 claims abstract description 5
238000000151 deposition Methods 0.000 claims description 31
229910052741 iridium Inorganic materials 0.000 claims description 25
GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 25
230000008021 deposition Effects 0.000 claims description 23
239000010948 rhodium Substances 0.000 claims description 21
229910052703 rhodium Inorganic materials 0.000 claims description 17
MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 17
KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 16
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 15
KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 9
229910052707 ruthenium Inorganic materials 0.000 claims description 9
239000004020 conductor Substances 0.000 claims description 8
230000005670 electromagnetic radiation Effects 0.000 claims description 8
229910052763 palladium Inorganic materials 0.000 claims description 8
239000010409 thin film Substances 0.000 claims description 8
229910052697 platinum Inorganic materials 0.000 claims description 7
229910045601 alloy Inorganic materials 0.000 claims description 6
239000000956 alloy Substances 0.000 claims description 6
230000005855 radiation Effects 0.000 claims description 6
WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 4
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
229910052737 gold Inorganic materials 0.000 claims description 3
239000010931 gold Substances 0.000 claims description 3
239000002923 metal particle Substances 0.000 claims description 3
229910052702 rhenium Inorganic materials 0.000 claims description 3
229910052709 silver Inorganic materials 0.000 claims description 3
239000004332 silver Substances 0.000 claims description 3
239000000470 constituent Substances 0.000 claims description 2
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 14
239000000463 material Substances 0.000 description 13
229910010271 silicon carbide Inorganic materials 0.000 description 13
239000010408 film Substances 0.000 description 7
238000000137 annealing Methods 0.000 description 6
239000000126 substance Substances 0.000 description 6
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
239000008367 deionised water Substances 0.000 description 4
229910021641 deionized water Inorganic materials 0.000 description 4
VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
238000004377 microelectronic Methods 0.000 description 4
238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
238000002679 ablation Methods 0.000 description 3
239000007789 gas Substances 0.000 description 3
238000007654 immersion Methods 0.000 description 3
239000000203 mixture Substances 0.000 description 3
238000012858 packaging process Methods 0.000 description 3
238000004151 rapid thermal annealing Methods 0.000 description 3
238000002791 soaking Methods 0.000 description 3
UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
229910052786 argon Inorganic materials 0.000 description 2
238000004140 cleaning Methods 0.000 description 2
239000011248 coating agent Substances 0.000 description 2
238000000576 coating method Methods 0.000 description 2
150000002500 ions Chemical class 0.000 description 2
230000000873 masking effect Effects 0.000 description 2
BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
229910000077 silane Inorganic materials 0.000 description 2
239000004593 Epoxy Substances 0.000 description 1
229910001252 Pd alloy Inorganic materials 0.000 description 1
229910000691 Re alloy Inorganic materials 0.000 description 1
229910000929 Ru alloy Inorganic materials 0.000 description 1
239000002253 acid Substances 0.000 description 1
238000013019 agitation Methods 0.000 description 1
238000003491 array Methods 0.000 description 1
238000001311 chemical methods and process Methods 0.000 description 1
238000007796 conventional method Methods 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
238000001514 detection method Methods 0.000 description 1
238000004090 dissolution Methods 0.000 description 1
238000005538 encapsulation Methods 0.000 description 1
230000004927 fusion Effects 0.000 description 1
229910001385 heavy metal Inorganic materials 0.000 description 1
230000003993 interaction Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
230000007935 neutral effect Effects 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
239000012299 nitrogen atmosphere Substances 0.000 description 1
238000004806 packaging method and process Methods 0.000 description 1
238000000206 photolithography Methods 0.000 description 1
238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 1
238000004321 preservation Methods 0.000 description 1
239000010453 quartz Substances 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1

Classifications

- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies

Landscapes

Chemical & Material Sciences (AREA)
Life Sciences & Earth Sciences (AREA)
Health & Medical Sciences (AREA)
Physics & Mathematics (AREA)
Chemical Kinetics & Catalysis (AREA)
Electrochemistry (AREA)
Molecular Biology (AREA)
Analytical Chemistry (AREA)
Biochemistry (AREA)
General Health & Medical Sciences (AREA)
General Physics & Mathematics (AREA)
Immunology (AREA)
Pathology (AREA)
Physical Vapour Deposition (AREA)

CA 2173932 1996-04-11 1996-04-11 Procede de fabrication de matrices de microelectrodes Abandoned CA2173932A1 (fr)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
CA 2173932 CA2173932A1 (fr)	1996-04-11	1996-04-11	Procede de fabrication de matrices de microelectrodes
JP09535704A JP2000517413A (ja)	1996-04-11	1997-04-08	マイクロ電極アレイの製造方法
AU22837/97A AU2283797A (en)	1996-04-11	1997-04-08	Method for manufacturing an array of microelectrodes
PCT/CA1997/000236 WO1997038301A1 (fr)	1996-04-11	1997-04-08	Procede de formation d'un reseau de microelectrodes

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CA 2173932 CA2173932A1 (fr)	1996-04-11	1996-04-11	Procede de fabrication de matrices de microelectrodes

Publications (1)

Publication Number	Publication Date
CA2173932A1 true CA2173932A1 (fr)	1997-10-12

Family

ID=4157961

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA 2173932 Abandoned CA2173932A1 (fr)	1996-04-11	1996-04-11	Procede de fabrication de matrices de microelectrodes

Country Status (4)

Country	Link
JP (1)	JP2000517413A (fr)
AU (1)	AU2283797A (fr)
CA (1)	CA2173932A1 (fr)
WO (1)	WO1997038301A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE19831529C2 (de) *	1998-07-14	2002-04-11	Micronas Gmbh	Verfahren zum Herstellen einer Elektrode
CH697478B1 (fr) *	2001-05-22	2008-11-14	Adamant Technologies Sa	Système d'électrodes pour capteur électrochimique et procédé de détermination du PH d'une eau chlorée.

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB2190399A (en) *	1986-05-02	1987-11-18	Nat Res Dev	Multi-metal electrode
GB8927377D0 (en) *	1989-12-04	1990-01-31	Univ Edinburgh	Improvements in and relating to amperometric assays
EP0690467B1 (fr) *	1994-07-01	1999-11-10	Sony Corporation	Structure d'écran fluorescente et dispositif de visualisation à effet de champ et méthodes pour leur fabrication

1996
- 1996-04-11 CA CA 2173932 patent/CA2173932A1/fr not_active Abandoned
1997
- 1997-04-08 WO PCT/CA1997/000236 patent/WO1997038301A1/fr not_active Ceased
- 1997-04-08 AU AU22837/97A patent/AU2283797A/en not_active Abandoned
- 1997-04-08 JP JP09535704A patent/JP2000517413A/ja active Pending

Also Published As

Publication number	Publication date
AU2283797A (en)	1997-10-29
JP2000517413A (ja)	2000-12-26
WO1997038301A1 (fr)	1997-10-16

Legal Events

Date	Code	Title	Description
2001-04-11	FZDE	Dead

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