CA2241684C - Transistors a effet de champ, a seuil de fermi et a canal court, comportant une zone terminale du champ de drain, et leurs procedes de fabrication - Google Patents
Transistors a effet de champ, a seuil de fermi et a canal court, comportant une zone terminale du champ de drain, et leurs procedes de fabrication Download PDFInfo
- Publication number
- CA2241684C CA2241684C CA002241684A CA2241684A CA2241684C CA 2241684 C CA2241684 C CA 2241684C CA 002241684 A CA002241684 A CA 002241684A CA 2241684 A CA2241684 A CA 2241684A CA 2241684 C CA2241684 C CA 2241684C
- Authority
- CA
- Canada
- Prior art keywords
- source
- tub
- region
- drain
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 238000000034 method Methods 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims abstract description 224
- 239000004065 semiconductor Substances 0.000 claims description 40
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 150000002500 ions Chemical class 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 5
- 239000000969 carrier Substances 0.000 abstract description 29
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- 238000009792 diffusion process Methods 0.000 description 26
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- 230000003068 static effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
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- 229910052785 arsenic Inorganic materials 0.000 description 1
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- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
- H10D30/0278—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs forming single crystalline channels on wafers after forming insulating device isolations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs
- H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
- H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Un TEC de Fermi comprend une zone terminale de champ de drain située entre les zones drain et source, de façon à diminuer et de préférence à éviter l'injection dans le canal de porteurs provenant de la source par suite à la polarisation du drain. La zone terminale du champ de drain empêche l'abaissement excessif de l'effet barrière induit par le drain, tout en laissant persister un faible champ vertical dans le canal. Elle est de préférence constituée d'une couche contre-dopée enfouie entre la source et le drain, et s'étendant sous la surface du substrat depuis la source vers le drain. On peut former la couche contre-dopée enfouie en utilisant une structure à trois cuvettes qui donne trois couches entre la source et le drain éloignés l'un de l'autre. La zone terminale du champ de drain peut également être utilisée dans un transistor à effet de champ MOS classique. On forme de préférence la zone canal par dépôt épitaxial, ce qui évite l'obligation de la contre-doper par rapport à la zone terminale du champ de drain. Ceci permet une plus grande mobilité des porteurs dans le canal pour un niveau de dopage donné.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/597,711 US5698884A (en) | 1996-02-07 | 1996-02-07 | Short channel fermi-threshold field effect transistors including drain field termination region and methods of fabricating same |
| US08/597,711 | 1996-02-07 | ||
| PCT/US1997/002108 WO1997029519A1 (fr) | 1996-02-07 | 1997-02-04 | Transistors a effet de champ, a seuil de fermi et a canal court, comportant une zone terminale du champ de drain, et leurs procedes de fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2241684A1 CA2241684A1 (fr) | 1997-08-14 |
| CA2241684C true CA2241684C (fr) | 2006-08-01 |
Family
ID=36764337
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002241684A Expired - Fee Related CA2241684C (fr) | 1996-02-07 | 1997-02-04 | Transistors a effet de champ, a seuil de fermi et a canal court, comportant une zone terminale du champ de drain, et leurs procedes de fabrication |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA2241684C (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10326018B1 (en) * | 2018-02-28 | 2019-06-18 | Nxp Usa, Inc. | RF switches, integrated circuits, and devices with multi-gate field effect transistors and voltage leveling circuits, and methods of their fabrication |
-
1997
- 1997-02-04 CA CA002241684A patent/CA2241684C/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CA2241684A1 (fr) | 1997-08-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |