CA2246763C - Circuit ameliore de selection de redondance pour memoires a semiconducteurs - Google Patents

Circuit ameliore de selection de redondance pour memoires a semiconducteurs Download PDF

Info

Publication number
CA2246763C
CA2246763C CA 2246763 CA2246763A CA2246763C CA 2246763 C CA2246763 C CA 2246763C CA 2246763 CA2246763 CA 2246763 CA 2246763 A CA2246763 A CA 2246763A CA 2246763 C CA2246763 C CA 2246763C
Authority
CA
Canada
Prior art keywords
memory
circuit
redundant
data line
outputs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA 2246763
Other languages
English (en)
Other versions
CA2246763A1 (fr
Inventor
Peter Vlasenko
John Wu
Arun Achyuthan
Guillaume Valcourt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
Original Assignee
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaid Technologies Inc filed Critical Mosaid Technologies Inc
Priority to CA 2246763 priority Critical patent/CA2246763C/fr
Publication of CA2246763A1 publication Critical patent/CA2246763A1/fr
Application granted granted Critical
Publication of CA2246763C publication Critical patent/CA2246763C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
CA 2246763 1998-09-01 1998-09-01 Circuit ameliore de selection de redondance pour memoires a semiconducteurs Expired - Fee Related CA2246763C (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA 2246763 CA2246763C (fr) 1998-09-01 1998-09-01 Circuit ameliore de selection de redondance pour memoires a semiconducteurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA 2246763 CA2246763C (fr) 1998-09-01 1998-09-01 Circuit ameliore de selection de redondance pour memoires a semiconducteurs

Publications (2)

Publication Number Publication Date
CA2246763A1 CA2246763A1 (fr) 2000-03-01
CA2246763C true CA2246763C (fr) 2006-12-19

Family

ID=29409872

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2246763 Expired - Fee Related CA2246763C (fr) 1998-09-01 1998-09-01 Circuit ameliore de selection de redondance pour memoires a semiconducteurs

Country Status (1)

Country Link
CA (1) CA2246763C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9583211B1 (en) 2016-06-01 2017-02-28 International Business Machines Coproration Incorporating bit write capability with column interleave write enable and column redundancy steering

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9583211B1 (en) 2016-06-01 2017-02-28 International Business Machines Coproration Incorporating bit write capability with column interleave write enable and column redundancy steering

Also Published As

Publication number Publication date
CA2246763A1 (fr) 2000-03-01

Similar Documents

Publication Publication Date Title
KR100790442B1 (ko) 글로벌 리던던시를 갖는 메모리소자 및 그 동작 방법
US6144591A (en) Redundancy selection circuit for semiconductor memories
US6519192B2 (en) Semiconductor memory device having a large band width and allowing efficient execution of redundant repair
US5708619A (en) Column redundancy scheme for DRAM using normal and redundant column decoders programmed with defective array address and defective column address
KR100237583B1 (ko) 용장 기억 소자를 포함하는 메모리를 가진 집적회로 및 메모리의 동작 방법
US7274580B2 (en) Content addressable memory device
US5761135A (en) Sub-word line drivers for integrated circuit memory devices and related methods
JP2010146665A (ja) 抵抗変化型不揮発性半導体メモリ
US5808955A (en) Integrated circuit memory devices including sub-word line drivers and related methods
EP0945803A2 (fr) Procédé de remplacement de ligne de mot redondant dans un dispositif de mémoire à semiconducteurs
KR20100082046A (ko) 비동기식 멀티비트 ｏｔｐ 메모리 셀, 비동기식 멀티비트 ｏｔｐ 메모리 장치, 비동기식 멀티비트 ｏｔｐ 메모리 장치의 프로그램 방법 및 독출 방법
US5272672A (en) Semiconductor memory device having redundant circuit
EP0881571B1 (fr) Dispositif de mémoire à semiconducteur avec rédondance
KR100339428B1 (ko) 불휘발성 강유전체 메모리의 셀 블록 구조
US5706231A (en) Semiconductor memory device having a redundant memory cell
CA2202692C (fr) Redondance de colonne dans des memoires semi-conductrices
KR100342642B1 (ko) 용장 회로를 구비한 반도체 기억 장치
US4987560A (en) Semiconductor memory device
US7002822B2 (en) Content addressable memory device
CA2223222C (fr) Redondance de bits d'information pour memoires a semiconducteurs
US5995431A (en) Bit line precharge circuit with reduced standby current
US6335897B1 (en) Semiconductor memory device including redundancy circuit adopting latch cell
US7095642B1 (en) Method and circuit for reducing defect current from array element failures in random access memories
US6809972B2 (en) Circuit technique for column redundancy fuse latches
CA2246763C (fr) Circuit ameliore de selection de redondance pour memoires a semiconducteurs

Legal Events

Date Code Title Description
EEER Examination request
MKLA Lapsed

Effective date: 20160901