CA2249094A1 - Methode pour la fabrication d'un guide d'ondes optiques utilisant un systeme a plasma a accouplement par induction - Google Patents

Methode pour la fabrication d'un guide d'ondes optiques utilisant un systeme a plasma a accouplement par induction Download PDF

Info

Publication number
CA2249094A1
CA2249094A1 CA002249094A CA2249094A CA2249094A1 CA 2249094 A1 CA2249094 A1 CA 2249094A1 CA 002249094 A CA002249094 A CA 002249094A CA 2249094 A CA2249094 A CA 2249094A CA 2249094 A1 CA2249094 A1 CA 2249094A1
Authority
CA
Canada
Prior art keywords
layer
optical waveguide
forming
core layer
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002249094A
Other languages
English (en)
Inventor
Sun-Tae Jung
Hyung-Seung Song
Dong-Su Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019970050965A external-priority patent/KR100429850B1/ko
Priority claimed from KR1019970050967A external-priority patent/KR19990030656A/ko
Priority claimed from KR1019970050964A external-priority patent/KR19990030653A/ko
Priority claimed from KR1019970050966A external-priority patent/KR19990030655A/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CA2249094A1 publication Critical patent/CA2249094A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12173—Masking

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Arc Welding In General (AREA)
CA002249094A 1997-10-02 1998-09-30 Methode pour la fabrication d'un guide d'ondes optiques utilisant un systeme a plasma a accouplement par induction Abandoned CA2249094A1 (fr)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR97-50967 1997-10-02
KR1019970050965A KR100429850B1 (ko) 1997-10-02 1997-10-02 광도파로 제조방법
KR1019970050967A KR19990030656A (ko) 1997-10-02 1997-10-02 광도파로 제조방법
KR1019970050964A KR19990030653A (ko) 1997-10-02 1997-10-02 광도파로 제조방법
KR1019970050966A KR19990030655A (ko) 1997-10-02 1997-10-02 광도파로 제조방법
KR97-50966 1997-10-02
KR97-50965 1997-10-02
KR97-50964 1997-10-02

Publications (1)

Publication Number Publication Date
CA2249094A1 true CA2249094A1 (fr) 1999-04-02

Family

ID=27483234

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002249094A Abandoned CA2249094A1 (fr) 1997-10-02 1998-09-30 Methode pour la fabrication d'un guide d'ondes optiques utilisant un systeme a plasma a accouplement par induction

Country Status (5)

Country Link
JP (1) JPH11167037A (fr)
CN (1) CN1213782A (fr)
CA (1) CA2249094A1 (fr)
FR (1) FR2769376A1 (fr)
GB (1) GB2329873B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100361097B1 (ko) * 2000-12-13 2002-11-21 우리로광통신주식회사 유도결합형 플라즈마 식각장치를 이용한 광도파로 제조방법
US20020158047A1 (en) * 2001-04-27 2002-10-31 Yiqiong Wang Formation of an optical component having smooth sidewalls
JP2005148468A (ja) * 2003-11-17 2005-06-09 Sony Corp 光導波路、光源モジュール及び光情報処理装置
KR101235834B1 (ko) * 2010-12-08 2013-02-21 한국기계연구원 폴리머층을 식각 보호층으로 이용한 돌기 패턴의 형성 방법
WO2023056086A1 (fr) * 2021-10-01 2023-04-06 PsiQuantum Corp. Procédés de formation de motifs pour des dispositifs photoniques

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032844B2 (ja) * 1977-06-16 1985-07-30 住友電気工業株式会社 光導波路の製造方法
JPS592008A (ja) * 1982-06-28 1984-01-07 Nippon Telegr & Teleph Corp <Ntt> 埋め込み型石英光導波路の製造方法
JPS63194206A (ja) * 1987-02-09 1988-08-11 Nippon Telegr & Teleph Corp <Ntt> 石英系光導波路の製造方法
WO1991010341A1 (fr) * 1990-01-04 1991-07-11 Savas Stephen E Reacteur a plasma hf inductif a basse frequence
JPH03291605A (ja) * 1990-04-10 1991-12-20 Furukawa Electric Co Ltd:The 光導波路の形成方法
JPH04147201A (ja) * 1990-10-11 1992-05-20 Sumitomo Electric Ind Ltd 石英系光導波路及びその製造方法
JPH05215929A (ja) * 1992-02-03 1993-08-27 Hitachi Cable Ltd ガラス導波路の製造方法
JPH05307125A (ja) * 1992-04-28 1993-11-19 Japan Energy Corp 光導波路の製造方法
DE69531880T2 (de) * 1994-04-28 2004-09-09 Applied Materials, Inc., Santa Clara Verfahren zum Betreiben eines CVD-Reaktors hoher Plasma-Dichte mit kombinierter induktiver und kapazitiver Einkopplung
US5607542A (en) * 1994-11-01 1997-03-04 Applied Materials Inc. Inductively enhanced reactive ion etching
KR100322695B1 (ko) * 1995-03-20 2002-05-13 윤종용 강유전성캐패시터의제조방법
JPH08262250A (ja) * 1995-03-22 1996-10-11 Toshiba Mach Co Ltd 光導波路作製方法およびその装置
JP3951003B2 (ja) * 1995-11-17 2007-08-01 俊夫 後藤 プラズマ処理装置および方法
JP3492833B2 (ja) * 1995-11-28 2004-02-03 リコー光学株式会社 ドライエッチング用金属マスク・ドライエッチング用金属マスクの作製方法および深堀りドライエッチング方法
JPH09167696A (ja) * 1995-12-15 1997-06-24 Sony Corp 誘導結合プラズマ処理装置
US5667631A (en) * 1996-06-28 1997-09-16 Lam Research Corporation Dry etching of transparent electrodes in a low pressure plasma reactor
TW373268B (en) * 1997-02-21 1999-11-01 Applied Materials Inc Low temperature etch process utilizing power splitting between electrodes in AN RF plasma reactor

Also Published As

Publication number Publication date
GB9821310D0 (en) 1998-11-25
CN1213782A (zh) 1999-04-14
GB2329873B (en) 1999-11-10
GB2329873A (en) 1999-04-07
JPH11167037A (ja) 1999-06-22
FR2769376A1 (fr) 1999-04-09

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