CA2272129C - Dispositif a semiconducteur a couche reflechissante - Google Patents
Dispositif a semiconducteur a couche reflechissante Download PDFInfo
- Publication number
- CA2272129C CA2272129C CA002272129A CA2272129A CA2272129C CA 2272129 C CA2272129 C CA 2272129C CA 002272129 A CA002272129 A CA 002272129A CA 2272129 A CA2272129 A CA 2272129A CA 2272129 C CA2272129 C CA 2272129C
- Authority
- CA
- Canada
- Prior art keywords
- thickness
- layer
- reflecting layer
- reflecting
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 407
- 239000000203 mixture Substances 0.000 claims abstract description 37
- 230000005855 radiation Effects 0.000 claims description 111
- 239000000758 substrate Substances 0.000 claims description 93
- 230000003287 optical effect Effects 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 31
- 238000000407 epitaxy Methods 0.000 claims description 12
- 125000004122 cyclic group Chemical group 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 32
- 230000007423 decrease Effects 0.000 abstract description 17
- 230000007547 defect Effects 0.000 abstract description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 72
- 238000004088 simulation Methods 0.000 description 40
- 239000007789 gas Substances 0.000 description 22
- 230000008859 change Effects 0.000 description 21
- 238000012360 testing method Methods 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 11
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 10
- 230000000903 blocking effect Effects 0.000 description 9
- 230000031700 light absorption Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 3
- 229910000070 arsenic hydride Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- 239000012080 ambient air Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000003362 semiconductor superlattice Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2-298415 | 1990-11-02 | ||
| JP2298415A JPH04171776A (ja) | 1990-11-02 | 1990-11-02 | 面発光型発光ダイオード |
| JP2-301395 | 1990-11-07 | ||
| JP2301395A JPH04174567A (ja) | 1990-11-07 | 1990-11-07 | 面発光型発光ダイオードアレイ |
| JP3045975A JPH04264782A (ja) | 1991-02-19 | 1991-02-19 | 面発光型発光ダイオードの製造方法 |
| JP3-45975 | 1991-02-19 | ||
| JP3-87602 | 1991-03-26 | ||
| JP8760291 | 1991-03-26 | ||
| JP12513991A JP2973581B2 (ja) | 1991-04-26 | 1991-04-26 | チャープ状光反射層を備えた半導体装置 |
| JP3-125139 | 1991-04-26 | ||
| JP3-216146 | 1991-07-31 | ||
| JP21614691A JP3134382B2 (ja) | 1991-07-31 | 1991-07-31 | チャープ状光反射層を備えた半導体装置 |
| CA002054853A CA2054853C (fr) | 1990-11-02 | 1991-11-04 | Dispositif a semiconducteur a couche reflechissante |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002054853A Division CA2054853C (fr) | 1990-11-02 | 1991-11-04 | Dispositif a semiconducteur a couche reflechissante |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2272129A1 CA2272129A1 (fr) | 1992-05-03 |
| CA2272129C true CA2272129C (fr) | 2004-01-06 |
Family
ID=29716407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002272129A Expired - Fee Related CA2272129C (fr) | 1990-11-02 | 1991-11-04 | Dispositif a semiconducteur a couche reflechissante |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA2272129C (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE21744964T1 (de) * | 2020-01-25 | 2023-11-09 | Jade Bird Display (shanghai) Limited | Mikrolichtleuchtdiode mit hoher lichtauskopplung |
-
1991
- 1991-11-04 CA CA002272129A patent/CA2272129C/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CA2272129A1 (fr) | 1992-05-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8446446B2 (en) | Optical device, optical scanning apparatus and image forming apparatus | |
| US8803936B2 (en) | Optical device capable of minimizing output variation due to feedback light, optical scanning apparatus, and image forming apparatus | |
| US8711891B2 (en) | Surface emitting laser device, surface emitting laser array, optical scanning device, and image forming apparatus | |
| US9276377B2 (en) | Surface-emitting laser module, optical scanner device, and image forming apparatus | |
| EP3769382B1 (fr) | Réseau laser à émission de surface, dispositif de détection et dispositif laser | |
| KR101253396B1 (ko) | 면 발광 레이저 소자, 면 발광 레이저 어레이, 광 주사 장치, 및 화상 형성 장치 | |
| KR101438262B1 (ko) | 면발광 레이저 소자, 면발광 레이저 어레이, 광 주사 장치, 화상 형성 장치, 면발광 레이저 소자의 제조 방법 | |
| KR101357878B1 (ko) | 면발광 레이저 소자, 면발광 레이저 어레이, 광 주사기, 및 화상 형성 장치 | |
| US8502852B2 (en) | Surface emitting laser device, surface emitting laser array, optical scanning device, image forming apparatus, and method of manufacturing the surface emitting laser device | |
| US8258534B2 (en) | Light emitting device | |
| CA2054853C (fr) | Dispositif a semiconducteur a couche reflechissante | |
| CN112242642A (zh) | 包含具有压缩应力AlGaAsP层的垂直共振腔表面放射激光二极管(VCSEL) | |
| JP2011198857A (ja) | 面発光レーザモジュール、光走査装置及び画像形成装置 | |
| JP3881467B2 (ja) | 面発光レーザ | |
| CA2272129C (fr) | Dispositif a semiconducteur a couche reflechissante | |
| US7215693B2 (en) | Surface emitting semiconductor laser device | |
| JP2001127382A (ja) | 半導体レーザ装置、半導体レーザパッケージおよび半導体レーザ素子の製造方法 | |
| JP3134382B2 (ja) | チャープ状光反射層を備えた半導体装置 | |
| JPH08236807A (ja) | 半導体発光素子及び半導体発光素子アレイチップ | |
| JP2778868B2 (ja) | 面発光型発光ダイオード | |
| JP2014225575A (ja) | 半導体積層構造、面発光レーザアレイ、および光学機器 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDC | Correction of dead application (reinstatement) | ||
| MKLA | Lapsed |