CA2284826C - Preparation de couches d'un precurseur constitue de diseleniure de cuivre-indium-gallium par electrodeposition pour fabriquer des photopiles a haut rendement - Google Patents

Preparation de couches d'un precurseur constitue de diseleniure de cuivre-indium-gallium par electrodeposition pour fabriquer des photopiles a haut rendement Download PDF

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Publication number
CA2284826C
CA2284826C CA002284826A CA2284826A CA2284826C CA 2284826 C CA2284826 C CA 2284826C CA 002284826 A CA002284826 A CA 002284826A CA 2284826 A CA2284826 A CA 2284826A CA 2284826 C CA2284826 C CA 2284826C
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Prior art keywords
electrodeposition
gallium
indium
copper
voltage
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Expired - Fee Related
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CA002284826A
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English (en)
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CA2284826A1 (fr
Inventor
Raghu N. Bhattacharya
Falah Hasoon
Holm Wiesner
James Keane
Kannan Ramanathan
Rommel Noufi
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Priority claimed from US08/870,081 external-priority patent/US5871630A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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  • Photovoltaic Devices (AREA)

Abstract

On prépare une photopile (10) ayant un rendement de conversion global de 13,6 % à partir d'une couche (18) d'un précurseur constitué d'un diséléniure de cuivre-indium-gallium. Pour fabriquer ladite couche (18), on revêt un substrat constitué de verre/molybdène (12, 14) par électrodéposition simultanée de cuivre, d'indium, de gallium et de sélénium. La tension d'électrodéposition est une tension en courant alternatif haute fréquence superposée à une tension en courant continu, ce qui améliore la morphologie et la vitesse de croissance de la couche (18). L'électrodéposition est suivie d'un procédé physique de dépôt en phase gazeuse, ce qui permet de régler la stoechiométrie finale de la couche mince (18) sur approximativement Cu(In1-x,Gax)Se2, le rapport Ga/(In+Ga) étant de 0,39 environ.
CA002284826A 1997-04-21 1998-03-30 Preparation de couches d'un precurseur constitue de diseleniure de cuivre-indium-gallium par electrodeposition pour fabriquer des photopiles a haut rendement Expired - Fee Related CA2284826C (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US4450697P 1997-04-21 1997-04-21
US60/044,506 1997-04-21
US08/870,081 US5871630A (en) 1995-12-12 1997-06-05 Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells
US08/870,081 1997-06-05
PCT/US1998/006212 WO1998048079A1 (fr) 1997-04-21 1998-03-30 Preparation de couches d'un precurseur constitue de diseleniure de cuivre-indium-gallium par electrodeposition pour fabriquer des photopiles a haut rendement

Publications (2)

Publication Number Publication Date
CA2284826A1 CA2284826A1 (fr) 1998-10-29
CA2284826C true CA2284826C (fr) 2007-06-05

Family

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Family Applications (1)

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CA002284826A Expired - Fee Related CA2284826C (fr) 1997-04-21 1998-03-30 Preparation de couches d'un precurseur constitue de diseleniure de cuivre-indium-gallium par electrodeposition pour fabriquer des photopiles a haut rendement

Country Status (4)

Country Link
EP (1) EP0977911A4 (fr)
AU (1) AU6786998A (fr)
CA (1) CA2284826C (fr)
WO (1) WO1998048079A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0127113D0 (en) * 2001-11-10 2002-01-02 Univ Sheffield Copper indium based thin film photovoltaic devices and methods of making the same
US20090114274A1 (en) 2007-11-02 2009-05-07 Fritzemeier Leslie G Crystalline thin-film photovoltaic structures
DE102008051520A1 (de) * 2008-10-13 2010-04-22 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur Erzeugung einer (001)-texturierten Kristallschicht aus einem photoaktiven Schichtgitter-Halbleiter auf einer metallisch leitfähigen Schicht unter Beteiligung eines Metallpromoters
EP2475809A4 (fr) * 2009-09-08 2016-05-18 Chengdu Ark Eternity Photovoltaic Technology Company Ltd Procédé électrochimique de production de piles solaires au diséléniure de cuivre-indium-gallium (cigs)
US8969720B2 (en) 2010-03-17 2015-03-03 Dow Global Technologies Llc Photoelectronically active, chalcogen-based thin film structures incorporating tie layers
WO2013164248A1 (fr) * 2012-05-02 2013-11-07 Umicore Précurseur de sélénite et encre pour la fabrication de cellules photovoltaïques cigs

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221660A (en) * 1987-12-25 1993-06-22 Sumitomo Electric Industries, Ltd. Semiconductor substrate having a superconducting thin film
US5441897A (en) * 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells
US5730852A (en) * 1995-09-25 1998-03-24 Davis, Joseph & Negley Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

Also Published As

Publication number Publication date
AU6786998A (en) 1998-11-13
EP0977911A1 (fr) 2000-02-09
WO1998048079A1 (fr) 1998-10-29
EP0977911A4 (fr) 2002-05-22
CA2284826A1 (fr) 1998-10-29

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