CA2322714A1 - Article compose d'alliages de metaux nobles ameliores et methode de fabrication connexe - Google Patents
Article compose d'alliages de metaux nobles ameliores et methode de fabrication connexe Download PDFInfo
- Publication number
- CA2322714A1 CA2322714A1 CA002322714A CA2322714A CA2322714A1 CA 2322714 A1 CA2322714 A1 CA 2322714A1 CA 002322714 A CA002322714 A CA 002322714A CA 2322714 A CA2322714 A CA 2322714A CA 2322714 A1 CA2322714 A1 CA 2322714A1
- Authority
- CA
- Canada
- Prior art keywords
- article
- alloy
- noble metal
- metal elements
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 98
- 239000000956 alloy Substances 0.000 title claims abstract description 98
- 229910000510 noble metal Inorganic materials 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims description 30
- 238000005275 alloying Methods 0.000 claims abstract description 49
- 239000002245 particle Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 34
- 239000007787 solid Substances 0.000 claims abstract description 19
- 239000010948 rhodium Substances 0.000 claims description 27
- 229910052703 rhodium Inorganic materials 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 23
- 239000002244 precipitate Substances 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 17
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 13
- 229910052707 ruthenium Inorganic materials 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052797 bismuth Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- 229910052746 lanthanum Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052772 Samarium Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052745 lead Inorganic materials 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 150000001247 metal acetylides Chemical class 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- 150000002222 fluorine compounds Chemical class 0.000 claims description 3
- 230000001737 promoting effect Effects 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 239000011159 matrix material Substances 0.000 abstract description 29
- 238000001556 precipitation Methods 0.000 abstract description 7
- 238000005728 strengthening Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000007246 mechanism Effects 0.000 abstract description 3
- 238000004881 precipitation hardening Methods 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 6
- 238000010587 phase diagram Methods 0.000 description 6
- 239000006104 solid solution Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- 229910052691 Erbium Inorganic materials 0.000 description 3
- 229910019596 Rh—Si Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000001010 compromised effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052762 osmium Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 235000014676 Phragmites communis Nutrition 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910002839 Pt-Mo Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000007735 ion beam assisted deposition Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 150000003568 thioethers Chemical class 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910002710 Au-Pd Inorganic materials 0.000 description 1
- 229910017392 Au—Co Inorganic materials 0.000 description 1
- 229910017390 Au—Fe Inorganic materials 0.000 description 1
- 229910017398 Au—Ni Inorganic materials 0.000 description 1
- 229910015367 Au—Sb Inorganic materials 0.000 description 1
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910020187 CeF3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910021065 Pd—Fe Inorganic materials 0.000 description 1
- 229910021074 Pd—Si Inorganic materials 0.000 description 1
- 229910002845 Pt–Ni Inorganic materials 0.000 description 1
- 229910002787 Ru-Ni Inorganic materials 0.000 description 1
- 229910002793 Ru–Ni Inorganic materials 0.000 description 1
- 229910019832 Ru—Si Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910004366 ThF4 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910008322 ZrN Inorganic materials 0.000 description 1
- LOJCBXDREMTWPF-UHFFFAOYSA-N [Si].[Rh] Chemical compound [Si].[Rh] LOJCBXDREMTWPF-UHFFFAOYSA-N 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- QDJFZWFIWGSPEC-UHFFFAOYSA-N alumane;rhodium Chemical compound [AlH3].[Rh] QDJFZWFIWGSPEC-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- HRLKCXAESXEITQ-UHFFFAOYSA-N boron rhodium Chemical compound [Rh]#B HRLKCXAESXEITQ-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- -1 e.g. Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/021—Composite material
- H01H1/023—Composite material having a noble metal as the basic material
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/021—Composite material
- H01H1/027—Composite material containing carbon particles or fibres
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H2300/00—Orthogonal indexing scheme relating to electric switches, relays, selectors or emergency protective devices covered by H01H
- H01H2300/036—Application nanoparticles, e.g. nanotubes, integrated in switch components, e.g. contacts, the switch itself being clearly of a different scale, e.g. greater than nanoscale
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Contacts (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16129099P | 1999-10-25 | 1999-10-25 | |
| US16129199P | 1999-10-25 | 1999-10-25 | |
| US60/161,291 | 1999-10-25 | ||
| US60/161,290 | 1999-10-25 | ||
| US48462700A | 2000-01-18 | 2000-01-18 | |
| US09/484,627 | 2000-01-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2322714A1 true CA2322714A1 (fr) | 2001-04-25 |
Family
ID=27388589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002322714A Abandoned CA2322714A1 (fr) | 1999-10-25 | 2000-10-10 | Article compose d'alliages de metaux nobles ameliores et methode de fabrication connexe |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20010008157A1 (fr) |
| EP (1) | EP1096523A3 (fr) |
| JP (1) | JP2001158926A (fr) |
| KR (1) | KR20010040170A (fr) |
| CA (1) | CA2322714A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110976887A (zh) * | 2019-12-17 | 2020-04-10 | 哈尔滨东大高新材料股份有限公司 | AgWC（T）/CuC（X）触头材料及其制备方法 |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7071520B2 (en) | 2000-08-23 | 2006-07-04 | Reflectivity, Inc | MEMS with flexible portions made of novel materials |
| US7057246B2 (en) | 2000-08-23 | 2006-06-06 | Reflectivity, Inc | Transition metal dielectric alloy materials for MEMS |
| US7057251B2 (en) * | 2001-07-20 | 2006-06-06 | Reflectivity, Inc | MEMS device made of transition metal-dielectric oxide materials |
| EP1320111A1 (fr) * | 2001-12-11 | 2003-06-18 | Abb Research Ltd. | Contact de nanotube en carbon pour un MEMS |
| US7244367B2 (en) | 2001-12-11 | 2007-07-17 | Jds Uniphase Corporation | Metal alloy elements in micromachined devices |
| JP3955795B2 (ja) * | 2002-06-12 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| US20070189916A1 (en) * | 2002-07-23 | 2007-08-16 | Heraeus Incorporated | Sputtering targets and methods for fabricating sputtering targets having multiple materials |
| DE10245343A1 (de) * | 2002-09-27 | 2004-04-08 | Robert Bosch Gmbh | Elektrischer Kontakt |
| JP2004319409A (ja) * | 2003-04-21 | 2004-11-11 | Mitsubishi Materials Corp | マイクロマシンスイッチの接触電極用薄膜およびこの接触電極用薄膜を形成するためのスパッタリングターゲット |
| JP2004319411A (ja) * | 2003-04-21 | 2004-11-11 | Mitsubishi Materials Corp | マイクロマシンスイッチの接触電極用薄膜およびこの接触電極用薄膜を形成するためのスパッタリングターゲット |
| JP2004319410A (ja) * | 2003-04-21 | 2004-11-11 | Mitsubishi Materials Corp | マイクロマシンスイッチの接触電極用薄膜およびこの接触電極用薄膜を形成するためのスパッタリングターゲット |
| JP2004362801A (ja) * | 2003-06-02 | 2004-12-24 | Aisan Ind Co Ltd | 粉末組成物、粉末組成物の製造方法及び製造装置 |
| US7081647B2 (en) * | 2003-09-29 | 2006-07-25 | Matsushita Electric Industrial Co., Ltd. | Microelectromechanical system and method for fabricating the same |
| WO2005065281A2 (fr) * | 2003-12-31 | 2005-07-21 | The Regents Of The University Of California | Articles comprenant un materiau nanocomposite a conductivite electrique elevee et procede permettant de produire ces articles |
| JP4044926B2 (ja) * | 2004-12-20 | 2008-02-06 | 株式会社エルグ | 表面処理方法及び接点部材 |
| JP4438685B2 (ja) * | 2005-05-23 | 2010-03-24 | セイコーエプソン株式会社 | 透明導電膜とその形成方法、電気光学装置、及び電子機器 |
| DE102005044522B4 (de) * | 2005-09-16 | 2010-02-11 | Schott Ag | Verfahren zum Aufbringen einer porösen Glasschicht, sowie Verbundmaterial und dessen Verwendung |
| CA2560030C (fr) * | 2005-11-24 | 2013-11-12 | Sulzer Metco Ag | Materiel et methode de metallisation au pistolet, et revetement et piece metallises au pistolet |
| US20070135552A1 (en) * | 2005-12-09 | 2007-06-14 | General Atomics | Gas barrier |
| WO2007118337A1 (fr) * | 2006-04-13 | 2007-10-25 | Abb Research Ltd | Ensemble de contacts électriques |
| DE102006027821A1 (de) * | 2006-06-16 | 2007-12-27 | Siemens Ag | Elektrischer Schaltkontakt |
| US20080294372A1 (en) * | 2007-01-26 | 2008-11-27 | Herbert Dennis Hunt | Projection facility within an analytic platform |
| JP4906165B2 (ja) * | 2007-07-31 | 2012-03-28 | 株式会社デンソー | 内燃機関用のスパークプラグ |
| FR2930370B1 (fr) * | 2008-04-18 | 2011-08-26 | Thales Sa | Composants microsystemes comportant une membrane comprenant des nanotubes. |
| US8845867B2 (en) * | 2008-12-09 | 2014-09-30 | Tdk Corporation | Method for manufacturing magnetoresistance effect element using simultaneous sputtering of Zn and ZnO |
| KR20170143023A (ko) | 2009-10-21 | 2017-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작방법 |
| KR20120106950A (ko) * | 2009-11-13 | 2012-09-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스퍼터링 타겟 및 그 제작 방법 및 트랜지스터 |
| WO2011058882A1 (fr) | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Cible de pulvérisation cathodique et procédé pour fabriquer celle-ci, et transistor |
| WO2012076281A1 (fr) * | 2010-12-06 | 2012-06-14 | Abb Research Ltd | Élément de contact électrique et contact électrique |
| US8894825B2 (en) | 2010-12-17 | 2014-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target, method for manufacturing the same, manufacturing semiconductor device |
| US9660092B2 (en) | 2011-08-31 | 2017-05-23 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor thin film transistor including oxygen release layer |
| US20140319432A1 (en) * | 2013-04-24 | 2014-10-30 | Sandia Corporation | Wear-Resistant Nanocrystalline Hard Noble Metal Coating |
| EP3070182B1 (fr) * | 2015-03-17 | 2017-08-30 | The Swatch Group Research and Development Ltd. | Alliage d'or gris |
| US10857575B2 (en) | 2017-02-27 | 2020-12-08 | Nanovation Partners LLC | Shelf-life-improved nanostructured implant systems and methods |
| US10763000B1 (en) * | 2017-05-03 | 2020-09-01 | National Technology & Engineering Solutions Of Sandia, Llc | Stable nanocrystalline metal alloy coatings with ultra-low wear |
| CN108754212A (zh) * | 2018-05-15 | 2018-11-06 | 雷山县弘悦银饰有限责任公司 | 一种银饰补口材料及其制备方法 |
| CN112366107B (zh) * | 2020-11-11 | 2021-12-10 | 福达合金材料股份有限公司 | 一种银金属氧化物片状电触头制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2272063A (en) * | 1939-06-05 | 1942-02-03 | Mallory & Co Inc P R | Electric contacting member |
| GB534407A (en) * | 1940-01-02 | 1941-03-06 | Mallory & Co Inc P R | Improvements in and relating to silver-base alloys or mixtures and make-and-break contacts thereof |
| DE1077435B (de) * | 1957-02-13 | 1960-03-10 | Heraeus Gmbh W C | Verwendung von Rhodium-Nickel-Legierungen als Werkstoff fuer elektrische Kontakte |
| US4911769A (en) * | 1987-03-25 | 1990-03-27 | Matsushita Electric Works, Ltd. | Composite conductive material |
| US4826808A (en) * | 1987-03-27 | 1989-05-02 | Massachusetts Institute Of Technology | Preparation of superconducting oxides and oxide-metal composites |
| US5139891A (en) * | 1991-07-01 | 1992-08-18 | Olin Corporation | Palladium alloys having utility in electrical applications |
| US5833774A (en) * | 1997-04-10 | 1998-11-10 | The J. M. Ney Company | High strength silver palladium alloy |
-
2000
- 2000-10-10 CA CA002322714A patent/CA2322714A1/fr not_active Abandoned
- 2000-10-16 EP EP00309103A patent/EP1096523A3/fr not_active Withdrawn
- 2000-10-17 JP JP2000316101A patent/JP2001158926A/ja active Pending
- 2000-10-25 KR KR1020000062897A patent/KR20010040170A/ko not_active Ceased
- 2000-12-06 US US09/731,135 patent/US20010008157A1/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110976887A (zh) * | 2019-12-17 | 2020-04-10 | 哈尔滨东大高新材料股份有限公司 | AgWC（T）/CuC（X）触头材料及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20010008157A1 (en) | 2001-07-19 |
| EP1096523A2 (fr) | 2001-05-02 |
| EP1096523A3 (fr) | 2003-06-18 |
| JP2001158926A (ja) | 2001-06-12 |
| KR20010040170A (ko) | 2001-05-15 |
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