CA2338346A1 - Article et procede hybride de modification d'une surface - Google Patents

Article et procede hybride de modification d'une surface Download PDF

Info

Publication number
CA2338346A1
CA2338346A1 CA002338346A CA2338346A CA2338346A1 CA 2338346 A1 CA2338346 A1 CA 2338346A1 CA 002338346 A CA002338346 A CA 002338346A CA 2338346 A CA2338346 A CA 2338346A CA 2338346 A1 CA2338346 A1 CA 2338346A1
Authority
CA
Canada
Prior art keywords
pattern
machining
plateaus
substrate
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002338346A
Other languages
English (en)
Inventor
Jeffrey M. Johnston
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BMC Industries Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2338346A1 publication Critical patent/CA2338346A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H3/00—Electrochemical machining, i.e. removing metal by passing current between an electrode and a workpiece in the presence of an electrolyte
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H9/00—Machining specially adapted for treating particular metal objects or for obtaining special effects or results on metal objects
    • B23H9/008—Surface roughening or texturing

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Materials For Photolithography (AREA)
  • ing And Chemical Polishing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La combinaison ou hybridation de l'usinage chimique (notamment usinage photochimique, usinage chimique ou thermique utilisant une réserve) avec l'usinage par électroérosion permet d'obtenir une méthode d'usinage plus efficace présentant des caractéristiques d'attaque chimique unique et d'amélioration des coûts. La propriété de l'usinage chimique permettant d'usiner avec précision et rapidité un substrat à des profondeurs importantes est alliée à une meilleure planéité des surfaces de paroi ou pente de l'usinage à électroérosion plus lent, mais plus précis, et permet d'obtenir des configurations de surfaces tridimensionnelles dont les caractéristiques faciales sont uniques, obtenues rapidement et de haute qualité. Pour effectuer ce procédé, on a recours à : a) un premier usinage chimique pour obtenir la configuration de base et approcher la profondeur de texturation désirée dans le produit final et améliorer les gorges, les parois et les creux de la surface configurée par un autre usinage à électroérosion, ou b) l'usinage électrochimique pour obtenir une configuration de creux, gorges et parois, et ensuite augmenter la profondeur de ces gorges par usinage chimique (en combinaison avec une réserve sur la surface du plateau de la configuration initiale). Le produit initial obtenu à partir de l'alternative b) peut subir un autre usinage à électroérosion pour améliorer les caractéristiques des gorges.
CA002338346A 1999-06-01 2000-05-30 Article et procede hybride de modification d'une surface Abandoned CA2338346A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32397999A 1999-06-01 1999-06-01
US09/323,979 1999-06-01
PCT/US2000/014797 WO2000073856A2 (fr) 1999-06-01 2000-05-30 Article et procede hybride de modification d'une surface

Publications (1)

Publication Number Publication Date
CA2338346A1 true CA2338346A1 (fr) 2000-12-07

Family

ID=23261550

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002338346A Abandoned CA2338346A1 (fr) 1999-06-01 2000-05-30 Article et procede hybride de modification d'une surface

Country Status (6)

Country Link
EP (1) EP1145083A2 (fr)
JP (1) JP2003501687A (fr)
KR (1) KR20020010562A (fr)
CA (1) CA2338346A1 (fr)
MX (1) MXPA01000994A (fr)
WO (1) WO2000073856A2 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012213787A1 (de) * 2012-08-03 2014-02-06 Robert Bosch Gmbh Oberflächenstrukturierung für zellbiologische und/oder medizinische Anwendungen

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4599243A (en) * 1982-12-23 1986-07-08 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US4436584A (en) * 1983-03-21 1984-03-13 Sperry Corporation Anisotropic plasma etching of semiconductors
US5342481A (en) * 1991-02-15 1994-08-30 Sony Corporation Dry etching method
US5866482A (en) * 1996-09-27 1999-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for masking conducting layers to abate charge damage during plasma etching
WO1998051506A1 (fr) * 1997-05-14 1998-11-19 Seiko Epson Corporation Procede de formation d'ajutage pour injecteurs et procede de fabrication d'une tete a jet d'encre

Also Published As

Publication number Publication date
KR20020010562A (ko) 2002-02-04
MXPA01000994A (es) 2002-06-04
WO2000073856A2 (fr) 2000-12-07
JP2003501687A (ja) 2003-01-14
EP1145083A2 (fr) 2001-10-17
WO2000073856A3 (fr) 2001-07-19

Similar Documents

Publication Publication Date Title
Shaw et al. Negative photoresists for optical lithography
WO2005003858A2 (fr) Generateurs de photoacides
JP4593309B2 (ja) 精密微細空間の天板部形成方法
JP6933705B2 (ja) レーザーアブレーション用ネガティブワーキングフォトレジスト組成物及びその使用
JP2005128508A (ja) ネガ型青紫色レーザー感光性組成物、並びにそれを用いた画像形成材料、画像形成材、及び画像形成方法
JP2003337414A (ja) ネガ型レジスト組成物
JP2011111588A (ja) 硬化性樹脂組成物及びその硬化物
TW466382B (en) A method for forming a resist pattern and a positive resist composition used for the same
JP4296053B2 (ja) 多層レジストプロセス用中間層組成物及びそれを用いたパターン形成方法
CA2338346A1 (fr) Article et procede hybride de modification d'une surface
KR20010049734A (ko) 상 형성 조성물, 이를 포함하는 상 기록 물질 및 상 형성방법
JP5075803B2 (ja) ポジ型レジスト組成物及びこれを用いたパターン形成方法
JP4337485B2 (ja) 青紫色レーザー感光性組成物、並びにそれを用いた画像形成材料、画像形成材、及び画像形成方法
US20060189160A1 (en) Method for producing a pattern formation mold
Schaedeli et al. Evaluation of Materials for 193-nm Lithography
CN1705913B (zh) 负型青紫色激光感光性组合物、图像形成材料、图像形成元件和图像形成方法
US20040248037A1 (en) Composition for actinic energy ray and method of forming pattern
KR100835611B1 (ko) 포지티브 레지스트 조성물
JP2004101811A (ja) ネガ型レジスト組成物
JP2004251985A (ja) ネガ型感光性樹脂組成物及び画像形成材
EP4220301A1 (fr) Composition de résine photosensible négative « i-line » servant à réduire la différence de hauteur entre le centre et le bord et à réduire la rugosité de bord de ligne (ler), et composition de résine photosensible négative « i-line » servant à améliorer la marge de traitement
JP2004109409A (ja) ネガ型感光性組成物及び画像形成方法
MERRICKS Chemistry of Lithography for
Shaw J. D. Gelorme
JP2004109960A (ja) 多層レジストプロセス用中間層組成物及びそれを用いたパターン形成方法

Legal Events

Date Code Title Description
FZDE Discontinued