CA2345849C - Alliages metalliques pour la couche reflechissante ou semi-reflechissante d'un support de stockage optique - Google Patents
Alliages metalliques pour la couche reflechissante ou semi-reflechissante d'un support de stockage optique Download PDFInfo
- Publication number
- CA2345849C CA2345849C CA002345849A CA2345849A CA2345849C CA 2345849 C CA2345849 C CA 2345849C CA 002345849 A CA002345849 A CA 002345849A CA 2345849 A CA2345849 A CA 2345849A CA 2345849 C CA2345849 C CA 2345849C
- Authority
- CA
- Canada
- Prior art keywords
- medium
- layer
- percent
- silver
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 102
- 238000003860 storage Methods 0.000 title claims description 52
- 229910001092 metal group alloy Inorganic materials 0.000 title claims description 44
- 239000004332 silver Substances 0.000 claims abstract description 164
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 163
- 229910052709 silver Inorganic materials 0.000 claims abstract description 163
- 239000011701 zinc Substances 0.000 claims abstract description 46
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 44
- 239000011572 manganese Substances 0.000 claims abstract description 42
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 32
- 239000010949 copper Substances 0.000 claims abstract description 31
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 31
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 26
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims abstract description 26
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052802 copper Inorganic materials 0.000 claims abstract description 26
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 53
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 50
- 239000000203 mixture Substances 0.000 claims description 48
- 239000011248 coating agent Substances 0.000 claims description 36
- 238000000576 coating method Methods 0.000 claims description 36
- 239000010931 gold Substances 0.000 claims description 33
- 239000011651 chromium Substances 0.000 claims description 31
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 30
- 229910052737 gold Inorganic materials 0.000 claims description 30
- 239000011669 selenium Substances 0.000 claims description 29
- 229910052711 selenium Inorganic materials 0.000 claims description 28
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 27
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 27
- 229910052714 tellurium Inorganic materials 0.000 claims description 27
- 229910052787 antimony Inorganic materials 0.000 claims description 25
- 239000010936 titanium Substances 0.000 claims description 24
- 229910052759 nickel Inorganic materials 0.000 claims description 22
- 229910052744 lithium Inorganic materials 0.000 claims description 21
- 229910052796 boron Inorganic materials 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 19
- 229910052804 chromium Inorganic materials 0.000 claims description 18
- 229910052738 indium Inorganic materials 0.000 claims description 18
- 229910052750 molybdenum Inorganic materials 0.000 claims description 17
- 239000000382 optic material Substances 0.000 claims description 16
- 229910052718 tin Inorganic materials 0.000 claims description 16
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 15
- 229910052726 zirconium Inorganic materials 0.000 claims description 15
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 14
- 239000003989 dielectric material Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 13
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 13
- 229910052793 cadmium Inorganic materials 0.000 claims description 13
- 229910052733 gallium Inorganic materials 0.000 claims description 13
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 12
- 239000011733 molybdenum Substances 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 11
- 239000010948 rhodium Substances 0.000 claims description 10
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052741 iridium Inorganic materials 0.000 claims description 9
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052762 osmium Inorganic materials 0.000 claims description 9
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 9
- 229910052763 palladium Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 229910052703 rhodium Inorganic materials 0.000 claims description 9
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 9
- 229910052716 thallium Inorganic materials 0.000 claims description 8
- 229910017061 Fe Co Inorganic materials 0.000 claims description 7
- 229910005939 Ge—Sn Inorganic materials 0.000 claims description 7
- 229910020923 Sn-O Inorganic materials 0.000 claims description 7
- 229910018731 Sn—Au Inorganic materials 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- 238000002310 reflectometry Methods 0.000 abstract description 75
- 229910045601 alloy Inorganic materials 0.000 abstract description 49
- 239000000956 alloy Substances 0.000 abstract description 49
- 239000010409 thin film Substances 0.000 abstract description 43
- 238000005260 corrosion Methods 0.000 abstract description 16
- 230000007797 corrosion Effects 0.000 abstract description 16
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 abstract description 10
- 238000007792 addition Methods 0.000 abstract 1
- 239000011247 coating layer Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 233
- 229910001316 Ag alloy Inorganic materials 0.000 description 38
- 239000000758 substrate Substances 0.000 description 33
- 238000005477 sputtering target Methods 0.000 description 20
- 230000008859 change Effects 0.000 description 19
- 238000000034 method Methods 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 17
- 239000002355 dual-layer Substances 0.000 description 16
- 229910000838 Al alloy Inorganic materials 0.000 description 13
- 229920000515 polycarbonate Polymers 0.000 description 12
- 239000004417 polycarbonate Substances 0.000 description 12
- 150000002739 metals Chemical class 0.000 description 11
- 239000010970 precious metal Substances 0.000 description 11
- 229910002056 binary alloy Inorganic materials 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000005275 alloying Methods 0.000 description 7
- 238000013500 data storage Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 6
- 230000032683 aging Effects 0.000 description 6
- 238000010276 construction Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910000914 Mn alloy Inorganic materials 0.000 description 5
- 238000005266 casting Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 239000012782 phase change material Substances 0.000 description 5
- 239000004831 Hot glue Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229920005668 polycarbonate resin Polymers 0.000 description 4
- 239000004431 polycarbonate resin Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910002058 ternary alloy Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910000927 Ge alloy Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- -1 halogen ions Chemical class 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910000618 GeSbTe Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 2
- 229910001297 Zn alloy Inorganic materials 0.000 description 2
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010273 cold forging Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 101150052147 ALLC gene Proteins 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000763 AgInSbTe Inorganic materials 0.000 description 1
- 241000183024 Populus tremula Species 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- FOPBMNGISYSNED-UHFFFAOYSA-N [Fe].[Co].[Tb] Chemical compound [Fe].[Co].[Tb] FOPBMNGISYSNED-UHFFFAOYSA-N 0.000 description 1
- XVRLBVUHNKCEQQ-UHFFFAOYSA-N [Fe].[Gd].[Tb] Chemical compound [Fe].[Gd].[Tb] XVRLBVUHNKCEQQ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 102200082902 rs33947457 Human genes 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007514 turning Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| USUNKNOWN | 1999-09-15 | ||
| US21984300P | 2000-07-21 | 2000-07-21 | |
| US60/219,843 | 2000-07-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2345849A1 CA2345849A1 (fr) | 2002-01-21 |
| CA2345849C true CA2345849C (fr) | 2006-10-03 |
Family
ID=22821001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002345849A Expired - Lifetime CA2345849C (fr) | 2000-07-21 | 2001-04-30 | Alliages metalliques pour la couche reflechissante ou semi-reflechissante d'un support de stockage optique |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN1725335B (fr) |
| CA (1) | CA2345849C (fr) |
| DE (2) | DE05019014T1 (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7691463B2 (en) | 2004-11-24 | 2010-04-06 | Industrial Technology Research Institute | Optical recording materials and recording mediums using the same |
| CN102544362B (zh) * | 2010-12-31 | 2014-02-05 | 中国科学院上海微系统与信息技术研究所 | 用于相变存储的相变材料及调节其相变参数的方法 |
| JP5590258B2 (ja) * | 2013-01-23 | 2014-09-17 | 三菱マテリアル株式会社 | Ａｇ合金膜形成用スパッタリングターゲットおよびＡｇ合金膜、Ａｇ合金反射膜、Ａｇ合金導電膜、Ａｇ合金半透過膜 |
| CN109989045B (zh) * | 2019-05-14 | 2021-07-30 | 沈阳东创贵金属材料有限公司 | 一种用于真空磁控溅射的铝银合金靶材及其制备方法 |
| JP7353249B2 (ja) * | 2020-08-19 | 2023-09-29 | Ｅｅｊａ株式会社 | シアン系電解銀合金めっき液 |
| CN114407547B (zh) * | 2021-12-29 | 2023-03-07 | 江苏泰佳新材料科技有限公司 | 一种耐水洗防伪烫印膜及其制备方法 |
| CN115821114B (zh) * | 2022-11-24 | 2024-04-26 | 河北工业大学 | 一种高强韧耐蚀锆银二元合金及其制备方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990042064A (ko) * | 1997-11-25 | 1999-06-15 | 윤종용 | 귀금속 반사층을 구비한 상변화 광디스크 |
| CN1248044A (zh) * | 1998-09-13 | 2000-03-22 | 黄笳唐 | 光学记录介质 |
| CN1314379C (zh) * | 2003-12-14 | 2007-05-09 | 福建恒安集团有限公司 | 一种制造短裤式纸尿裤的方法及所制得的物品 |
-
2001
- 2001-04-30 CA CA002345849A patent/CA2345849C/fr not_active Expired - Lifetime
- 2001-05-04 DE DE05019014T patent/DE05019014T1/de active Pending
- 2001-05-04 DE DE60136758T patent/DE60136758D1/de not_active Expired - Lifetime
- 2001-05-23 CN CN2005100795635A patent/CN1725335B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CA2345849A1 (fr) | 2002-01-21 |
| DE05019014T1 (de) | 2006-08-31 |
| CN1725335B (zh) | 2012-11-28 |
| DE60136758D1 (de) | 2009-01-08 |
| CN1725335A (zh) | 2006-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU765849B2 (en) | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium | |
| US7291374B2 (en) | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium | |
| US7645500B2 (en) | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium | |
| US7687130B2 (en) | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium | |
| US20030138591A1 (en) | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium | |
| US7384677B2 (en) | Metal alloys for the reflective or semi-reflective layer of an optical storage medium | |
| US7314659B2 (en) | Metal alloys for the reflective or semi-reflective layer of an optical storage medium | |
| US7314657B2 (en) | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium | |
| AU2004200010A1 (en) | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium | |
| AU2006201836A1 (en) | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKEX | Expiry |
Effective date: 20210430 |