CA2361752C - A lateral field effect transistor of sic, a method for production thereof and a use of such a transistor - Google Patents

A lateral field effect transistor of sic, a method for production thereof and a use of such a transistor Download PDF

Info

Publication number: CA2361752C
Authority: CA; Canada
Prior art keywords: layer; type; transistor according; source region; base layer
Prior art date: 1999-02-03
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

CA2361752A

Other languages

English (en)

French (fr)

Other versions

CA2361752A1 (en

Inventor

Christopher Harris

Andrei Konstantinov

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Wolfspeed Sweden AB

Original Assignee

Cree Sweden AB

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1999-02-03

Filing date

2000-02-01

Publication date

2011-05-10

1999-02-03 Priority claimed from SE9900358A external-priority patent/SE9900358D0/xx

2000-02-01 Application filed by Cree Sweden AB filed Critical Cree Sweden AB

2000-08-10 Publication of CA2361752A1 publication Critical patent/CA2361752A1/en

2011-05-10 Application granted granted Critical

2011-05-10 Publication of CA2361752C publication Critical patent/CA2361752C/en

2020-02-01 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices

Landscapes

Junction Field-Effect Transistors (AREA)
Insulated Gate Type Field-Effect Transistor (AREA)
Bipolar Transistors (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

CA2361752A 1999-02-03 2000-02-01 A lateral field effect transistor of sic, a method for production thereof and a use of such a transistor Expired - Lifetime CA2361752C (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
SE9900358-4		1999-02-03
SE9900358A SE9900358D0 (sv)	1999-02-03	1999-02-03	A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor
PCT/SE2000/000192 WO2000046850A1 (en)	1999-02-03	2000-02-01	A LATERAL FIELD EFFECT TRANSISTOR OF SiC, A METHOD FOR PRODUCTION THEREOF AND A USE OF SUCH A TRANSISTOR

Publications (2)

Publication Number	Publication Date
CA2361752A1 CA2361752A1 (en)	2000-08-10
CA2361752C true CA2361752C (en)	2011-05-10

Family

ID=20414342

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA2361752A Expired - Lifetime CA2361752C (en)	1999-02-03	2000-02-01	A lateral field effect transistor of sic, a method for production thereof and a use of such a transistor

Country Status (8)

Country	Link
EP (1)	EP1163696B1 (de)
JP (1)	JP5038556B2 (de)
KR (1)	KR100629020B1 (de)
CN (1)	CN1146969C (de)
AT (1)	ATE476752T1 (de)
CA (1)	CA2361752C (de)
DE (1)	DE60044776D1 (de)
HK (1)	HK1042378B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6956239B2 (en) *	2002-11-26	2005-10-18	Cree, Inc.	Transistors having buried p-type layers beneath the source region
JP5623898B2 (ja) *	2010-12-21	2014-11-12	ルネサスエレクトロニクス株式会社	半導体装置およびその製造方法
DE102017102127B4 (de) *	2017-02-03	2023-03-09	Infineon Technologies Ag	Verfahren zum Herstellen von Halbleitervorrichtungen unter Verwendung einer Epitaxie und Halbleitervorrichtungen mit einer lateralen Struktur
CN116387348B (zh) *	2023-04-27	2023-10-27	南京第三代半导体技术创新中心有限公司	一种精确控制短沟道的平面型SiC MOSFET及其制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5270554A (en) *	1991-06-14	1993-12-14	Cree Research, Inc.	High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
JP3471823B2 (ja) *	1992-01-16	2003-12-02	富士電機株式会社	絶縁ゲート型半導体装置およびその製造方法
US5569937A (en) *	1995-08-28	1996-10-29	Motorola	High breakdown voltage silicon carbide transistor
SE9601178D0 (sv) *	1996-03-27	1996-03-27	Abb Research Ltd	A field controlled semiconductor device of SiC and a method for production thereof

2000
- 2000-02-01 KR KR1020017009812A patent/KR100629020B1/ko not_active Expired - Lifetime
- 2000-02-01 DE DE60044776T patent/DE60044776D1/de not_active Expired - Lifetime
- 2000-02-01 HK HK02104058.9A patent/HK1042378B/zh unknown
- 2000-02-01 CA CA2361752A patent/CA2361752C/en not_active Expired - Lifetime
- 2000-02-01 EP EP00906825A patent/EP1163696B1/de not_active Expired - Lifetime
- 2000-02-01 CN CNB008034044A patent/CN1146969C/zh not_active Expired - Fee Related
- 2000-02-01 AT AT00906825T patent/ATE476752T1/de not_active IP Right Cessation
- 2000-02-01 JP JP2000597836A patent/JP5038556B2/ja not_active Expired - Lifetime

Also Published As

Publication number	Publication date
DE60044776D1 (de)	2010-09-16
JP2002536832A (ja)	2002-10-29
CN1146969C (zh)	2004-04-21
HK1042378A1 (en)	2002-08-09
EP1163696B1 (de)	2010-08-04
JP5038556B2 (ja)	2012-10-03
ATE476752T1 (de)	2010-08-15
HK1042378B (zh)	2005-02-25
CA2361752A1 (en)	2000-08-10
KR100629020B1 (ko)	2006-09-27
EP1163696A1 (de)	2001-12-19
KR20010094754A (ko)	2001-11-01
CN1339173A (zh)	2002-03-06

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Legal Events

Date	Code	Title	Description
2004-09-13	EEER	Examination request
2020-04-06	MKEX	Expiry	Effective date: 20200203