CA2367064A1 - Procedes relatifs a la fabrication de structures obtenues par attaque chimique - Google Patents

Procedes relatifs a la fabrication de structures obtenues par attaque chimique Download PDF

Info

Publication number
CA2367064A1
CA2367064A1 CA002367064A CA2367064A CA2367064A1 CA 2367064 A1 CA2367064 A1 CA 2367064A1 CA 002367064 A CA002367064 A CA 002367064A CA 2367064 A CA2367064 A CA 2367064A CA 2367064 A1 CA2367064 A1 CA 2367064A1
Authority
CA
Canada
Prior art keywords
layer
mask
target
sacrificial
mask layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002367064A
Other languages
English (en)
Inventor
Richard Vincent Penty
Ian Hugh White
Michael Cowin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Bristol
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2367064A1 publication Critical patent/CA2367064A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

L'invention concerne un procédé relatif à la fabrication d'une structure obtenue par attaque chimique dans un matériau cible (21), selon les étapes suivantes: formation d'une première couche masque (22) sur le matériau, définissant un premier motif préétabli de matériau exposé; dépôt d'une couche sacrificielle (23) sur la première couche et le matériau exposé; formation d'une seconde couche masque (24) sur la couche sacrificielle, définissant un second motif préétabli de matériau exposé; et formation d'une structure obtenue par attaque chimique dans le matériau cible, définie par la combinaison des deux motifs.
CA002367064A 1999-02-11 2000-02-10 Procedes relatifs a la fabrication de structures obtenues par attaque chimique Abandoned CA2367064A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9903110.6A GB9903110D0 (en) 1999-02-11 1999-02-11 Method of fabricating etched structures
GB9903110.6 1999-02-11
PCT/GB2000/000423 WO2000048236A1 (fr) 1999-02-11 2000-02-10 Procedes relatifs a la fabrication de structures obtenues par attaque chimique

Publications (1)

Publication Number Publication Date
CA2367064A1 true CA2367064A1 (fr) 2000-08-17

Family

ID=10847566

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002367064A Abandoned CA2367064A1 (fr) 1999-02-11 2000-02-10 Procedes relatifs a la fabrication de structures obtenues par attaque chimique

Country Status (5)

Country Link
EP (1) EP1155440A1 (fr)
AU (1) AU765894B2 (fr)
CA (1) CA2367064A1 (fr)
GB (1) GB9903110D0 (fr)
WO (1) WO2000048236A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117790300A (zh) * 2024-02-23 2024-03-29 深圳市常丰激光刀模有限公司 一种精细线路的动态蚀刻补偿方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7276453B2 (en) 2004-08-10 2007-10-02 E.I. Du Pont De Nemours And Company Methods for forming an undercut region and electronic devices incorporating the same
US7166860B2 (en) 2004-12-30 2007-01-23 E. I. Du Pont De Nemours And Company Electronic device and process for forming same
WO2021003224A1 (fr) * 2019-07-03 2021-01-07 Lam Research Corporation Procédé de gravure de caractéristiques à l'aide d'un dépôt ciblé pour passivation sélective

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4201800A (en) * 1978-04-28 1980-05-06 International Business Machines Corp. Hardened photoresist master image mask process
JPH03198327A (ja) * 1989-12-26 1991-08-29 Fujitsu Ltd 半導体装置の製造方法
JPH03263834A (ja) * 1990-03-14 1991-11-25 Matsushita Electron Corp 半導体装置の製造方法
US5091290A (en) * 1990-12-03 1992-02-25 Micron Technology, Inc. Process for promoting adhesion of a layer of photoresist on a substrate having a previous layer of photoresist
US5736457A (en) * 1994-12-09 1998-04-07 Sematech Method of making a damascene metallization

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117790300A (zh) * 2024-02-23 2024-03-29 深圳市常丰激光刀模有限公司 一种精细线路的动态蚀刻补偿方法
CN117790300B (zh) * 2024-02-23 2024-04-30 深圳市常丰激光刀模有限公司 一种精细线路的动态蚀刻补偿方法

Also Published As

Publication number Publication date
AU2450300A (en) 2000-08-29
WO2000048236A1 (fr) 2000-08-17
AU765894B2 (en) 2003-10-02
GB9903110D0 (en) 1999-04-07
EP1155440A1 (fr) 2001-11-21

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Legal Events

Date Code Title Description
FZDE Discontinued