CA2380374A1 - Convertisseur optique de longueur d'onde integre simple et a deux etapes accordable en longueur d'onde - Google Patents

Convertisseur optique de longueur d'onde integre simple et a deux etapes accordable en longueur d'onde Download PDF

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Publication number
CA2380374A1
CA2380374A1 CA002380374A CA2380374A CA2380374A1 CA 2380374 A1 CA2380374 A1 CA 2380374A1 CA 002380374 A CA002380374 A CA 002380374A CA 2380374 A CA2380374 A CA 2380374A CA 2380374 A1 CA2380374 A1 CA 2380374A1
Authority
CA
Canada
Prior art keywords
interferometer
output
coupled
laser
semiconductor optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002380374A
Other languages
English (en)
Inventor
Gregory A. Fish
Daniel J. Blumenthal
Thomas Gordon Beck Mason
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California San Diego UCSD
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2380374A1 publication Critical patent/CA2380374A1/fr
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
    • G02F2/004—Transferring the modulation of modulated light, i.e. transferring the information from one optical carrier of a first wavelength to a second optical carrier of a second wavelength, e.g. all-optical wavelength converter
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2/00—Demodulating light; Transferring the modulation of modulated light; Frequency-changing of light
    • G02F2/004—Transferring the modulation of modulated light, i.e. transferring the information from one optical carrier of a first wavelength to a second optical carrier of a second wavelength, e.g. all-optical wavelength converter
    • G02F2/006—All-optical wavelength conversion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5009—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive
    • H01S5/5018—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement being polarisation-insensitive using two or more amplifiers or multiple passes through the same amplifier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5054—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 in which the wavelength is transformed by non-linear properties of the active medium, e.g. four wave mixing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'invention concerne un laser accordable (10) à semi-conducteur et un interféromètre (12), couplé au laser accordable (10), fabriqués de façon monolithique dans une hétérostructure à semi-conducteur. Le laser comprend également un laser en guide d'onde à ruban enterré. L'interféromètre (12) possède un amplificateur optique (38) à semi-conducteur couplé à chaque bras. Un convertisseur d'amplificateur optique à semi-conducteur à gain transversal est couplé à l'interféromètre (12). L'amplificateur optique (38) à semi-conducteur couplé à chaque bras est polarisé de façon que la différence de longueur d'un parcours optique entre les deux bras soit en opposition de phase et provoque une interférence destructive. La sortie du laser accordable (10) est couplée à un coupleur. Un amplificateur optique (38) à semi-conducteur sert de régulateur de gain pour les amplificateurs optiques à semi-conducteur de l'interféromètre (12), permettant d'effectuer une conversion de longueur d'onde sur une gamme étendue de puissances de signaux d'entrée. Le substrat de l'hétérostructure comprend une couche guide à faible structure de bande et des régions actives à puits quantique multiple plus minces situées au-dessus de la couche guide à faible structure de bande. Le substrat de l'hétérostructure comprend des éléments passifs non absorbants formés par élimination sélective des régions à puits quantique au-dessus de la couche guide, permettant la formation de sections actives et passives dans la couche guide sans avoir à effectuer une reformation par raccord à bride lisse. L'invention concerne également un procédé de fabrication d'un dispositif optique intégré tel que celui décrit plus haut dans le substrat de l'hétérostructure.
CA002380374A 1999-09-28 2000-09-28 Convertisseur optique de longueur d'onde integre simple et a deux etapes accordable en longueur d'onde Abandoned CA2380374A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15645999P 1999-09-28 1999-09-28
US60/156,459 1999-09-28
PCT/US2000/026655 WO2001024329A1 (fr) 1999-09-28 2000-09-28 Convertisseur optique de longueur d'onde integre simple et a deux etapes accordable en longueur d'onde

Publications (1)

Publication Number Publication Date
CA2380374A1 true CA2380374A1 (fr) 2001-04-05

Family

ID=22559659

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002380374A Abandoned CA2380374A1 (fr) 1999-09-28 2000-09-28 Convertisseur optique de longueur d'onde integre simple et a deux etapes accordable en longueur d'onde

Country Status (6)

Country Link
EP (1) EP1218988A4 (fr)
JP (1) JP2003510664A (fr)
CN (1) CN1376326A (fr)
AU (1) AU775671B2 (fr)
CA (1) CA2380374A1 (fr)
WO (1) WO2001024329A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9312662B1 (en) 2014-09-30 2016-04-12 Lumentum Operations Llc Tunable laser source

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6563627B2 (en) 2001-04-06 2003-05-13 Sung-Joo Ben Yoo Wavelength converter with modulated absorber
WO2003021733A1 (fr) 2001-09-05 2003-03-13 Kamelian Limited Amplificateurs optiques cales sur le gain et a gain variable
KR100928963B1 (ko) * 2003-01-10 2009-11-26 삼성전자주식회사 양자우물을 가지는 광소자
CN1312812C (zh) * 2003-03-03 2007-04-25 中国科学院半导体研究所 波长可调谐分布布拉格反射半导体激光器的制作方法
US7139490B2 (en) * 2004-02-06 2006-11-21 General Instrument Corporation All-optical wavelength converter circuit
KR100579512B1 (ko) * 2004-12-08 2006-05-15 삼성전자주식회사 자체적으로 파장가변 레이저 광원을 생성하는 파장변환기
CN102082392A (zh) * 2010-12-28 2011-06-01 中国科学院半导体研究所 可调谐激光器与光放大器的单片集成器件及其制作方法
WO2016007860A1 (fr) * 2014-07-11 2016-01-14 Acacia Communications, Inc. Laser accordable intégré de forte puissance avec sorties réglables
CN104104011A (zh) * 2014-08-08 2014-10-15 武汉光迅科技股份有限公司 一种宽带可调谐激光器
EP2985645B1 (fr) * 2014-08-13 2019-10-16 Caliopa NV Procédé de production d'un circuit optique intégré
JP2022522796A (ja) * 2019-03-01 2022-04-20 ネオフォトニクス・コーポレイション シリコンフォトニクス外部共振器型同調可能レーザの波長制御のための方法
EP4050741A1 (fr) * 2021-02-26 2022-08-31 EFFECT Photonics B.V. Circuit intégré photonique monolithique et système opto-électronique le comprenant
CN112882311B (zh) * 2021-03-29 2024-09-10 国网江苏省电力有限公司无锡供电分公司 一种基于soa的全光波长转换控制器及控制方法

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DE3931588A1 (de) * 1989-09-22 1991-04-04 Standard Elektrik Lorenz Ag Interferometrischer halbleiterlaser
JPH0766482A (ja) * 1993-08-26 1995-03-10 Anritsu Corp 可変波長光源
JPH07153933A (ja) * 1993-11-30 1995-06-16 Nippon Telegr & Teleph Corp <Ntt> 波長変換素子
EP0717482A1 (fr) * 1994-12-14 1996-06-19 AT&T Corp. Dispositif optique interférometrique à semi-conducteur pour la conversion de longueur d'onde
JPH08307014A (ja) * 1995-05-08 1996-11-22 Mitsubishi Electric Corp 光半導体装置
JPH08334796A (ja) * 1995-06-07 1996-12-17 Oki Electric Ind Co Ltd 光波長変換集積素子
FR2749946B1 (fr) * 1996-06-14 1998-07-31 Alsthom Cge Alcatel Dispositif de mise en forme de signaux optiques binaires et son utilisation pour modifier lesdits signaux
JPH1174599A (ja) * 1997-07-01 1999-03-16 Canon Inc 信号伝送用半導体光源装置の駆動方法、信号伝送用光源装置、およびそれを用いた光通信方法および光通信システム
JP3393533B2 (ja) * 1997-07-04 2003-04-07 日本電信電話株式会社 波長板集積型偏波無依存半導体増幅器
JPH1187853A (ja) * 1997-09-05 1999-03-30 Nippon Telegr & Teleph Corp <Ntt> 光半導体装置
CA2362311A1 (fr) * 1999-03-01 2000-09-08 Regents Of The University Of California Source laser accordable a surveillance integree de la longueur d'ondes, et mode de mise en oeuvre

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9312662B1 (en) 2014-09-30 2016-04-12 Lumentum Operations Llc Tunable laser source
US9728933B2 (en) 2014-09-30 2017-08-08 Lumentum Operations Llc Tunable laser source

Also Published As

Publication number Publication date
WO2001024329A1 (fr) 2001-04-05
CN1376326A (zh) 2002-10-23
AU775671B2 (en) 2004-08-12
JP2003510664A (ja) 2003-03-18
AU7727500A (en) 2001-04-30
EP1218988A4 (fr) 2005-11-23
EP1218988A1 (fr) 2002-07-03

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