CA2388178A1 - Procede et appareil destine au depot sous vide d'un revetement sur un substrat - Google Patents

Procede et appareil destine au depot sous vide d'un revetement sur un substrat Download PDF

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Publication number
CA2388178A1
CA2388178A1 CA002388178A CA2388178A CA2388178A1 CA 2388178 A1 CA2388178 A1 CA 2388178A1 CA 002388178 A CA002388178 A CA 002388178A CA 2388178 A CA2388178 A CA 2388178A CA 2388178 A1 CA2388178 A1 CA 2388178A1
Authority
CA
Canada
Prior art keywords
material source
substrate
source
exit aperture
conduit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002388178A
Other languages
English (en)
Inventor
Gary L. Smith
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kurt J Lesker Co
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2388178A1 publication Critical patent/CA2388178A1/fr
Abandoned legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne un procédé et un appareil destiné au dépôt sous vide d'un matériau sur un substrat. Ce matériau de départ possédant un composant d'émission de dépôt sensiblement longitudinal est utilisé pour créer une plume d'émission de dépôt du matériau sensiblement longitudinale qui dépose un revêtement sur la surface du substrat sans augmenter la distance de pulvérisation entre le substrat et le matériau de départ.
CA002388178A 1999-10-22 2000-10-20 Procede et appareil destine au depot sous vide d'un revetement sur un substrat Abandoned CA2388178A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16109499P 1999-10-22 1999-10-22
US60/161,094 1999-10-22
PCT/US2000/029099 WO2001031081A1 (fr) 1999-10-22 2000-10-20 Procede et appareil destine au depot sous vide d'un revetement sur un substrat

Publications (1)

Publication Number Publication Date
CA2388178A1 true CA2388178A1 (fr) 2001-05-03

Family

ID=22579796

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002388178A Abandoned CA2388178A1 (fr) 1999-10-22 2000-10-20 Procede et appareil destine au depot sous vide d'un revetement sur un substrat

Country Status (9)

Country Link
EP (1) EP1246951A4 (fr)
JP (1) JP2003513169A (fr)
KR (1) KR100495751B1 (fr)
CN (1) CN1175126C (fr)
AU (1) AU1339401A (fr)
CA (1) CA2388178A1 (fr)
DE (1) DE10085115T1 (fr)
TW (1) TW574396B (fr)
WO (1) WO2001031081A1 (fr)

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TW490714B (en) 1999-12-27 2002-06-11 Semiconductor Energy Lab Film formation apparatus and method for forming a film
US20020011205A1 (en) 2000-05-02 2002-01-31 Shunpei Yamazaki Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
US7517551B2 (en) 2000-05-12 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light-emitting device
JP4704605B2 (ja) 2001-05-23 2011-06-15 淳二 城戸 連続蒸着装置、蒸着装置及び蒸着方法
SG113448A1 (en) * 2002-02-25 2005-08-29 Semiconductor Energy Lab Fabrication system and a fabrication method of a light emitting device
KR100473485B1 (ko) * 2002-03-19 2005-03-09 주식회사 이노벡스 유기 반도체 소자 박막 제작을 위한 선형 증발원
US7309269B2 (en) 2002-04-15 2007-12-18 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device
US6749906B2 (en) 2002-04-25 2004-06-15 Eastman Kodak Company Thermal physical vapor deposition apparatus with detachable vapor source(s) and method
US20040035360A1 (en) 2002-05-17 2004-02-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
TWI277363B (en) 2002-08-30 2007-03-21 Semiconductor Energy Lab Fabrication system, light-emitting device and fabricating method of organic compound-containing layer
KR101006938B1 (ko) 2002-09-20 2011-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조 시스템 및 발광장치 제작방법
US7211461B2 (en) 2003-02-14 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
JP4493926B2 (ja) 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 製造装置
US7211454B2 (en) 2003-07-25 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate
US8123862B2 (en) 2003-08-15 2012-02-28 Semiconductor Energy Laboratory Co., Ltd. Deposition apparatus and manufacturing apparatus
JP4551996B2 (ja) * 2003-10-09 2010-09-29 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー 蒸発装置
US20050241585A1 (en) * 2004-04-30 2005-11-03 Eastman Kodak Company System for vaporizing materials onto a substrate surface
ITMI20042279A1 (it) * 2004-11-24 2005-02-24 Getters Spa Sistema dispensatore di metalli alcalini in grado di dispensare quantita' elevate di metalli
JP2006225757A (ja) * 2005-01-21 2006-08-31 Mitsubishi Heavy Ind Ltd 真空蒸着装置
KR100635496B1 (ko) * 2005-02-25 2006-10-17 삼성에스디아이 주식회사 격벽을 구비하는 측면 분사형 선형 증발원 및 그 증발원을구비하는 증착장치
US7433141B2 (en) 2005-03-09 2008-10-07 Tandberg Data Corporation Data randomization for rewriting in recording/reproduction apparatus
JP4696710B2 (ja) * 2005-06-15 2011-06-08 ソニー株式会社 蒸着成膜装置および蒸着源
KR100745619B1 (ko) * 2006-04-11 2007-08-02 한국전기연구원 플룸 형상 제어 레이저 증착 시스템
KR101108152B1 (ko) * 2009-04-30 2012-01-31 삼성모바일디스플레이주식회사 증착 소스
KR101094299B1 (ko) 2009-12-17 2011-12-19 삼성모바일디스플레이주식회사 선형 증발원 및 이를 포함하는 증착 장치
KR102077803B1 (ko) * 2013-05-21 2020-02-17 삼성디스플레이 주식회사 증착원 및 유기층 증착 장치
CN104178734B (zh) * 2014-07-21 2016-06-15 京东方科技集团股份有限公司 蒸发镀膜装置
KR102319998B1 (ko) * 2015-01-22 2021-11-01 삼성디스플레이 주식회사 볼륨 가변형 도가니를 구비한 증착원
KR102488260B1 (ko) * 2016-03-07 2023-01-13 삼성디스플레이 주식회사 증착 장치 및 표시 장치의 제조 방법
CN106148878B (zh) * 2016-06-24 2018-06-08 中南大学 一种模拟高温喷镀过程的装置及其使用方法

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Also Published As

Publication number Publication date
CN1402800A (zh) 2003-03-12
EP1246951A1 (fr) 2002-10-09
AU1339401A (en) 2001-05-08
TW574396B (en) 2004-02-01
KR20020068039A (ko) 2002-08-24
EP1246951A4 (fr) 2004-10-13
WO2001031081A1 (fr) 2001-05-03
CN1175126C (zh) 2004-11-10
JP2003513169A (ja) 2003-04-08
KR100495751B1 (ko) 2005-06-17
DE10085115T1 (de) 2002-11-07

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