CA2481336A1 - Amplificateur de detection de courant asymetrique - Google Patents

Amplificateur de detection de courant asymetrique Download PDF

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Publication number
CA2481336A1
CA2481336A1 CA002481336A CA2481336A CA2481336A1 CA 2481336 A1 CA2481336 A1 CA 2481336A1 CA 002481336 A CA002481336 A CA 002481336A CA 2481336 A CA2481336 A CA 2481336A CA 2481336 A1 CA2481336 A1 CA 2481336A1
Authority
CA
Canada
Prior art keywords
electrically coupled
terminal electrically
voltage
sense amplifier
bitline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002481336A
Other languages
English (en)
Inventor
Janine Guichaoua
Jean Michel Daga
Caroline Papaix
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2481336A1 publication Critical patent/CA2481336A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers

Landscapes

  • Read Only Memory (AREA)
  • Amplifiers (AREA)
  • Static Random-Access Memory (AREA)

Abstract

La présente invention concerne une amplificateur de détection asymétrique présentant un circuit de précharge (20) qui sert à maintenir une tension stable aux borne d'une ligne binaire (19), un circuit de détection (30) couplé à la ligne binaire (19) pour détecter une quantité de courant qui traverse la ligne binaire (19), un circuit d'amplification de courant continu (40) couplé électriquement au circuit de détection (30) pour amplifier le courant détecté sur la ligne binaire (19), un circuit de conversion courant-tension (50) qui sert à convertir le courant détecté en une tension, et un circuit d'amplification de tension (60) qui sert à amplifier la tension à la sortie (80) de l'amplificateur de détection. L'amplificateur de détection peut être mis en application au moyen de composants CMOS standards et permet d'obtenir un temps d'accès amélioré pour une tension d'alimentation faible et une résistance élevée aux variations dans le cadre du processus, et est capable de détecter des courants très faibles.
CA002481336A 2002-04-11 2003-02-11 Amplificateur de detection de courant asymetrique Abandoned CA2481336A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/121,377 2002-04-11
US10/121,377 US6608787B1 (en) 2002-04-11 2002-04-11 Single-ended current sense amplifier
PCT/US2003/004075 WO2003088252A1 (fr) 2002-04-11 2003-02-11 Amplificateur de detection de courant asymetrique

Publications (1)

Publication Number Publication Date
CA2481336A1 true CA2481336A1 (fr) 2003-10-23

Family

ID=27733581

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002481336A Abandoned CA2481336A1 (fr) 2002-04-11 2003-02-11 Amplificateur de detection de courant asymetrique

Country Status (11)

Country Link
US (1) US6608787B1 (fr)
EP (1) EP1493158B1 (fr)
JP (1) JP2005522814A (fr)
KR (1) KR20040106341A (fr)
CN (1) CN1659658A (fr)
AU (1) AU2003217374A1 (fr)
CA (1) CA2481336A1 (fr)
DE (1) DE60315967T2 (fr)
NO (1) NO20044701L (fr)
TW (1) TWI229872B (fr)
WO (1) WO2003088252A1 (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7251178B2 (en) * 2004-09-07 2007-07-31 Infineon Technologies Ag Current sense amplifier
US7433253B2 (en) * 2002-12-20 2008-10-07 Qimonda Ag Integrated circuit, method of operating an integrated circuit, method of manufacturing an integrated circuit, memory module, stackable memory module
WO2005096796A2 (fr) * 2004-04-01 2005-10-20 Atmel Corporation Procede et appareil pour la distribution d'une double alimentation electrique a une memoire non volatile integree
FR2885726B1 (fr) * 2005-05-11 2007-07-06 Atmel Corp Circuit amplificateur de detection pour la detection parallele de quatre niveaux de courant
US7203096B2 (en) * 2005-06-30 2007-04-10 Infineon Technologies Flash Gmbh & Co. Kg Method and apparatus for sensing a state of a memory cell
US7352640B2 (en) * 2006-08-09 2008-04-01 Atmel Corporation High-speed, self-synchronized current sense amplifier
US7561485B2 (en) * 2007-01-12 2009-07-14 Atmel Corporation Sense architecture
US7636264B2 (en) * 2007-02-09 2009-12-22 Atmel Corporation Single-ended sense amplifier for very low voltage applications
US7642815B2 (en) * 2007-09-14 2010-01-05 Atmel Corporation Sense amplifier
US7813201B2 (en) * 2008-07-08 2010-10-12 Atmel Corporation Differential sense amplifier
US8270242B2 (en) * 2009-06-25 2012-09-18 Atmel Corporation Sense amplifier apparatus and methods
US8169845B2 (en) * 2009-06-25 2012-05-01 Atmel Corporation Apparatus and methods for sense amplifiers
US8254195B2 (en) * 2010-06-01 2012-08-28 Qualcomm Incorporated High-speed sensing for resistive memories
US8189402B2 (en) * 2010-06-16 2012-05-29 Ememory Technology Inc. Sensing circuit for memory cell supplied with low power
US8605528B2 (en) 2011-11-03 2013-12-10 International Business Machines Corporation Sense amplifier having an isolated pre-charge architecture, a memory circuit incorporating such a sense amplifier and associated methods
US8934286B2 (en) 2013-01-23 2015-01-13 International Business Machines Corporation Complementary metal-oxide-semiconductor (CMOS) dynamic random access memory (DRAM) cell with sense amplifier
WO2015009700A1 (fr) * 2013-07-16 2015-01-22 Hella Corporate Center Usa, Inc. Circuit de détection de courant à étalonnage décalé
US9589604B1 (en) * 2015-09-17 2017-03-07 International Business Machines Corporation Single ended bitline current sense amplifier for SRAM applications
US9484073B1 (en) 2015-12-15 2016-11-01 International Business Machines Corporation Current-mode sense amplifier
US11137822B2 (en) * 2018-02-26 2021-10-05 Chaoyang Semiconductor Jiangyin Technology Co., Ltd. Method and apparatus for improving integrity of processor voltage supply with overshoot mitigation and support for DVFS
CN110718250B (zh) * 2018-07-11 2021-10-01 西安格易安创集成电路有限公司 一种预充电电路及方法
US12228952B2 (en) * 2022-05-02 2025-02-18 Apple Inc. Electronic devices having complementary current mirror circuitry

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4918341A (en) 1988-09-23 1990-04-17 Actel Corporaton High speed static single-ended sense amplifier
US5013943A (en) 1989-08-11 1991-05-07 Simtek Corporation Single ended sense amplifier with improved data recall for variable bit line current
US5264743A (en) * 1989-12-08 1993-11-23 Hitachi, Ltd. Semiconductor memory operating with low supply voltage
JPH0478097A (ja) * 1990-07-13 1992-03-12 Sony Corp メモリ装置
EP0700049A1 (fr) * 1994-08-31 1996-03-06 STMicroelectronics S.r.l. Circuit de lecture pour cellules mémoires
US5666310A (en) 1996-01-30 1997-09-09 Cypress Semiconductor High-speed sense amplifier having variable current level trip point
KR100218306B1 (ko) * 1996-06-27 1999-09-01 구본준 전류/전압 변환기와 이를 이용하는 센스 증폭기 및 센싱방법
US5872739A (en) * 1997-04-17 1999-02-16 Radiant Technologies Sense amplifier for low read-voltage memory cells
KR100293446B1 (ko) * 1997-12-30 2001-07-12 김영환 메인증폭기
US6122212A (en) * 1998-05-01 2000-09-19 Winbond Electronics Corporation Sense amplifier with feedbox mechanism
JP3116921B2 (ja) * 1998-09-22 2000-12-11 日本電気株式会社 半導体記憶装置
JP2000306381A (ja) * 1999-04-21 2000-11-02 Fujitsu Ltd 半導体記憶装置
JP2000348488A (ja) * 1999-06-08 2000-12-15 Mitsubishi Electric Corp 半導体記憶装置
US6297670B1 (en) * 2000-03-30 2001-10-02 Century Semiconductor, Inc. Single-ended sense amplifier with adjustable noise margin and power down control

Also Published As

Publication number Publication date
DE60315967D1 (de) 2007-10-11
EP1493158A1 (fr) 2005-01-05
DE60315967T2 (de) 2008-05-29
NO20044701L (no) 2004-10-29
JP2005522814A (ja) 2005-07-28
US6608787B1 (en) 2003-08-19
WO2003088252A1 (fr) 2003-10-23
AU2003217374A1 (en) 2003-10-27
EP1493158A4 (fr) 2006-01-25
CN1659658A (zh) 2005-08-24
TW200305887A (en) 2003-11-01
KR20040106341A (ko) 2004-12-17
EP1493158B1 (fr) 2007-08-29
TWI229872B (en) 2005-03-21

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Legal Events

Date Code Title Description
FZDE Discontinued