CA2543950C - Substrat de gan monocristallin, methode de developpement des cristaux et methode de production du substrat de gan monocristallin - Google Patents

Substrat de gan monocristallin, methode de developpement des cristaux et methode de production du substrat de gan monocristallin Download PDF

Info

Publication number: CA2543950C
Authority: CA; Canada
Prior art keywords: gan; regions; defect accumulating; closed defect; single crystal
Prior art date: 2001-09-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

CA002543950A

Other languages

English (en)

Other versions

CA2543950A1 (fr

Inventor

Kensaku Motoki

Takuji Okahisa

Seiji Nakahata

Ryu Hirota

Koji Uematsu

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sumitomo Electric Industries Ltd

Original Assignee

Sumitomo Electric Industries Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2001-09-19

Filing date

2002-09-13

Publication date

2009-08-25

2002-08-08 Priority claimed from JP2002230925A external-priority patent/JP3864870B2/ja

2002-09-13 Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd

2002-09-13 Priority to CA002666671A priority Critical patent/CA2666671A1/fr

2003-03-19 Publication of CA2543950A1 publication Critical patent/CA2543950A1/fr

2009-08-25 Application granted granted Critical

2009-08-25 Publication of CA2543950C publication Critical patent/CA2543950C/fr

2022-09-13 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

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XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
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239000011029 spinel Substances 0.000 description 2
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WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 2
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229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
241000201976 Polycarpon Species 0.000 description 1
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235000005811 Viola adunca Nutrition 0.000 description 1
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235000013487 Viola odorata Nutrition 0.000 description 1
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238000002441 X-ray diffraction Methods 0.000 description 1
HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
239000006096 absorbing agent Substances 0.000 description 1
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QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
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AIMMVWOEOZMVMS-UHFFFAOYSA-N cyclopropanecarboxamide Chemical compound NC(=O)C1CC1 AIMMVWOEOZMVMS-UHFFFAOYSA-N 0.000 description 1
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Landscapes

Crystals, And After-Treatments Of Crystals (AREA)

CA002543950A 2001-09-19 2002-09-13 Substrat de gan monocristallin, methode de developpement des cristaux et methode de production du substrat de gan monocristallin Expired - Fee Related CA2543950C (fr)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
CA002666671A CA2666671A1 (fr)	2001-09-19	2002-09-13	Substrat de gan monocristallin, methode de developpement des cristaux et methode de production du substrat de gan monocristallin

Applications Claiming Priority (5)

Application Number	Priority Date	Filing Date	Title
JP2001284323		2001-09-19
JP2001-284323		2001-09-19
JP2002230925A JP3864870B2 (ja)	2001-09-19	2002-08-08	単結晶窒化ガリウム基板およびその成長方法並びにその製造方法
JP2002-230925		2002-08-08
CA002403310A CA2403310C (fr)	2001-09-19	2002-09-13	Substrat de gan monocristallin, methode de developpement des cristaux et methode de production du substrat de gan monocristallin

Related Parent Applications (1)

Application Number	Title	Priority Date	Filing Date
CA002403310A Division CA2403310C (fr)	2001-09-19	2002-09-13	Substrat de gan monocristallin, methode de developpement des cristaux et methode de production du substrat de gan monocristallin

Related Child Applications (1)

Application Number	Title	Priority Date	Filing Date
CA002666671A Division CA2666671A1 (fr)	2001-09-19	2002-09-13	Substrat de gan monocristallin, methode de developpement des cristaux et methode de production du substrat de gan monocristallin

Publications (2)

Publication Number	Publication Date
CA2543950A1 CA2543950A1 (fr)	2003-03-19
CA2543950C true CA2543950C (fr)	2009-08-25

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ID=36585968

Family Applications (1)

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CA002543950A Expired - Fee Related CA2543950C (fr)	2001-09-19	2002-09-13	Substrat de gan monocristallin, methode de developpement des cristaux et methode de production du substrat de gan monocristallin

Country Status (1)

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CA (1)	CA2543950C (fr)

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CN116770429A (zh) *	2022-03-11	2023-09-19	重庆康佳光电技术研究院有限公司	氮化镓外延片的制备方法
CN117096239B (zh) *	2023-08-10	2025-12-09	福建兆元光电有限公司	一种低闸流体效应的Mini LED的外延片及其生长方法

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- 2002-09-13 CA CA002543950A patent/CA2543950C/fr not_active Expired - Fee Related

Also Published As

Publication number	Publication date
CA2543950A1 (fr)	2003-03-19

Legal Events

Date	Code	Title	Description
2006-05-05	EEER	Examination request
2011-09-13	MKLA	Lapsed

Publication	Publication Date	Title
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