CA2561630A1 - Detecteur segmente de rayonnement avec cathode de protection laterale - Google Patents

Detecteur segmente de rayonnement avec cathode de protection laterale Download PDF

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Publication number
CA2561630A1
CA2561630A1 CA002561630A CA2561630A CA2561630A1 CA 2561630 A1 CA2561630 A1 CA 2561630A1 CA 002561630 A CA002561630 A CA 002561630A CA 2561630 A CA2561630 A CA 2561630A CA 2561630 A1 CA2561630 A1 CA 2561630A1
Authority
CA
Canada
Prior art keywords
detector
cathode
substrate
sides
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002561630A
Other languages
English (en)
Inventor
Henry Chen
Salah Awadalla
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Redlen Technologies Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CA 2541256 external-priority patent/CA2541256A1/fr
Application filed by Individual filed Critical Individual
Priority to CA002561630A priority Critical patent/CA2561630A1/fr
Publication of CA2561630A1 publication Critical patent/CA2561630A1/fr
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G01T1/241—Electrode arrangements, e.g. continuous or parallel strips or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1237—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe having at least three elements, e.g. HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
CA002561630A 2006-02-22 2006-09-29 Detecteur segmente de rayonnement avec cathode de protection laterale Abandoned CA2561630A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA002561630A CA2561630A1 (fr) 2006-02-22 2006-09-29 Detecteur segmente de rayonnement avec cathode de protection laterale

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CA 2541256 CA2541256A1 (fr) 2006-02-22 2006-02-22 Electrode de protection pour detecteur monolithique de rayonnement
CA2,541,256 2006-02-22
US11/527,707 2006-09-27
CA002561630A CA2561630A1 (fr) 2006-02-22 2006-09-29 Detecteur segmente de rayonnement avec cathode de protection laterale

Publications (1)

Publication Number Publication Date
CA2561630A1 true CA2561630A1 (fr) 2007-08-22

Family

ID=38433831

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002561630A Abandoned CA2561630A1 (fr) 2006-02-22 2006-09-29 Detecteur segmente de rayonnement avec cathode de protection laterale

Country Status (1)

Country Link
CA (1) CA2561630A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2762924A3 (fr) * 2013-01-31 2017-10-04 Nuctech Company Limited Détecteurs de rayonnement
CN111863848A (zh) * 2020-07-28 2020-10-30 湘潭大学 基于漂浮电极的硅像素探测器及其设计方法
CN112436062A (zh) * 2020-12-01 2021-03-02 上海大学 用于碲锌镉辐射探测器的复合电极及其制备方法
CN114447146A (zh) * 2021-12-27 2022-05-06 江苏赛诺格兰医疗科技有限公司 一种sipm探测器的返修方法
CN121613240A (zh) * 2026-02-03 2026-03-06 北京航空航天大学 时间分辨各向异性球探针测量装置以及方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2762924A3 (fr) * 2013-01-31 2017-10-04 Nuctech Company Limited Détecteurs de rayonnement
CN111863848A (zh) * 2020-07-28 2020-10-30 湘潭大学 基于漂浮电极的硅像素探测器及其设计方法
CN112436062A (zh) * 2020-12-01 2021-03-02 上海大学 用于碲锌镉辐射探测器的复合电极及其制备方法
CN114447146A (zh) * 2021-12-27 2022-05-06 江苏赛诺格兰医疗科技有限公司 一种sipm探测器的返修方法
CN114447146B (zh) * 2021-12-27 2023-05-26 江苏赛诺格兰医疗科技有限公司 一种sipm探测器的返修方法
CN121613240A (zh) * 2026-02-03 2026-03-06 北京航空航天大学 时间分辨各向异性球探针测量装置以及方法

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Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued

Effective date: 20140930