CA2601295C - Procede et dispositif servant a ameliorer la gravure aux electrons basse energie et le nettoyage de substrats - Google Patents
Procede et dispositif servant a ameliorer la gravure aux electrons basse energie et le nettoyage de substrats Download PDFInfo
- Publication number
- CA2601295C CA2601295C CA002601295A CA2601295A CA2601295C CA 2601295 C CA2601295 C CA 2601295C CA 002601295 A CA002601295 A CA 002601295A CA 2601295 A CA2601295 A CA 2601295A CA 2601295 C CA2601295 C CA 2601295C
- Authority
- CA
- Canada
- Prior art keywords
- plasma
- substrate
- mechanical support
- electrons
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
Landscapes
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA002353479A CA2353479C (fr) | 1998-12-03 | 1998-12-03 | Procede et dispositif servant a ameliorer la gravure aux electrons basse energie et le nettoyage de substrats |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002353479A Division CA2353479C (fr) | 1998-12-03 | 1998-12-03 | Procede et dispositif servant a ameliorer la gravure aux electrons basse energie et le nettoyage de substrats |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2601295A1 CA2601295A1 (fr) | 2000-06-08 |
| CA2601295C true CA2601295C (fr) | 2009-09-01 |
Family
ID=38792369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002601295A Expired - Fee Related CA2601295C (fr) | 1998-12-03 | 1998-12-03 | Procede et dispositif servant a ameliorer la gravure aux electrons basse energie et le nettoyage de substrats |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA2601295C (fr) |
-
1998
- 1998-12-03 CA CA002601295A patent/CA2601295C/fr not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CA2601295A1 (fr) | 2000-06-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7431796B2 (en) | Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment | |
| US8926789B2 (en) | Apparatus for the removal of a fluorinated polymer from a substrate | |
| US7713430B2 (en) | Using positive DC offset of bias RF to neutralize charge build-up of etch features | |
| US7034285B2 (en) | Beam source and beam processing apparatus | |
| US20080182422A1 (en) | Methods of etching photoresist on substrates | |
| US5435886A (en) | Method of plasma etching | |
| US6033587A (en) | Method and apparatus for low energy electron enhanced etching and cleaning of substrates in the positive column of a plasma | |
| KR101335120B1 (ko) | 플라즈마 프로세싱 시스템에서 대기 플라즈마의 최적화를위한 장치 | |
| KR20080048503A (ko) | 기판에서 에지 폴리머를 제거하기 위한 장치 및 그 제거를위한 방법 | |
| US5147465A (en) | Method of cleaning a surface | |
| US20030109092A1 (en) | Surface smoothing device and method thereof | |
| Pu | Plasma etch equipment | |
| EP1144735B1 (fr) | Procede et dispositif servant a ameliorer la gravure aux electrons basse energie et le nettoyage de substrats | |
| JP5227734B2 (ja) | 基板の低エネルギー電子促進エッチング及びクリーニング方法及び装置 | |
| CA2601295C (fr) | Procede et dispositif servant a ameliorer la gravure aux electrons basse energie et le nettoyage de substrats | |
| JPH05102083A (ja) | ドライエツチング方法及びそのための装置 | |
| JPH0770512B2 (ja) | 低エネルギイオン化粒子照射装置 | |
| Tian | Sub 10-nm Nanopantography and Nanopattern Transfer Using Highly Selective Plasma Etching | |
| JP3027871B2 (ja) | エッチング方法 | |
| Etching et al. | Sub 10-nm Nanopantography and Nanopattern | |
| JPH06151371A (ja) | プラズマ装置 | |
| JPS6276627A (ja) | ドライエツチング装置 | |
| JPH1022264A (ja) | 半導体装置の製造方法 | |
| JPH01124217A (ja) | 反応性イオンビームエッチング法 | |
| KR20030075631A (ko) | 플라즈마를 이용한 반도체 소자의 식각방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |
Effective date: 20171204 |