CA2673434C - Amelioration des performances d'un dispositif de memoire grace a un mecanisme de pre-effacement - Google Patents

Amelioration des performances d'un dispositif de memoire grace a un mecanisme de pre-effacement Download PDF

Info

Publication number
CA2673434C
CA2673434C CA2673434A CA2673434A CA2673434C CA 2673434 C CA2673434 C CA 2673434C CA 2673434 A CA2673434 A CA 2673434A CA 2673434 A CA2673434 A CA 2673434A CA 2673434 C CA2673434 C CA 2673434C
Authority
CA
Canada
Prior art keywords
block
memory
erase
sectors
sector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CA2673434A
Other languages
English (en)
Other versions
CA2673434A1 (fr
Inventor
Marko Ahvenainen
Kimmo Mylly
Jani Hyvonen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Memory Technologies LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memory Technologies LLC filed Critical Memory Technologies LLC
Publication of CA2673434A1 publication Critical patent/CA2673434A1/fr
Application granted granted Critical
Publication of CA2673434C publication Critical patent/CA2673434C/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10Providing a specific technical effect
    • G06F2212/1032Reliability improvement, data loss prevention, degraded operation etc
    • G06F2212/1036Life time enhancement
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7211Wear leveling

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

La description et les dessins présentent un nouveau procédé, un nouvel appareil et un nouveau produit logiciel destinés à améliorer les performances d'un dispositif de mémoire (par exemple, une carte mémoire) grâce à un mécanisme de pré-effacement. Ledit dispositif de mémoire peut être, par exemple, une carte mémoire, une carte multimédia, une carte numérique sécurisée, etc. Lorsque les données dans un secteur, une unité d'allocation ou un bloc particuliers peuvent être supprimées, une ou plusieurs nouvelles commandes peuvent être utilisées pour en informer un contrôleur de dispositif de mémoire. Grâce à ces informations, celui-ci peut ensuite effectuer certaines opérations d'entretien interne, par exemple en déplaçant des données valides d'un bloc d'effacement fragmenté vers un autre de manière à ce que le bloc d'effacement fragmenté puisse être détruit et effacé dans l'optique d'une utilisation future, ou en réalisant un entretien efficace de répartition d'usure, ainsi qu'une optimisation des performances d'écriture.
CA2673434A 2006-12-20 2007-11-26 Amelioration des performances d'un dispositif de memoire grace a un mecanisme de pre-effacement Active CA2673434C (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/643,755 2006-12-20
US11/643,755 US7515500B2 (en) 2006-12-20 2006-12-20 Memory device performance enhancement through pre-erase mechanism
PCT/IB2007/003627 WO2008084291A2 (fr) 2006-12-20 2007-11-26 Amélioration des performances d'un dispositif de mémoire grâce à un mécanisme de pré-effacement

Publications (2)

Publication Number Publication Date
CA2673434A1 CA2673434A1 (fr) 2008-07-17
CA2673434C true CA2673434C (fr) 2014-01-21

Family

ID=39544667

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2673434A Active CA2673434C (fr) 2006-12-20 2007-11-26 Amelioration des performances d'un dispositif de memoire grace a un mecanisme de pre-effacement

Country Status (5)

Country Link
US (1) US7515500B2 (fr)
EP (1) EP2115595B1 (fr)
CN (1) CN101627373B (fr)
CA (1) CA2673434C (fr)
WO (1) WO2008084291A2 (fr)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080282059A1 (en) * 2007-05-09 2008-11-13 Kattamuri Ekanadham Method and apparatus for determining membership in a set of items in a computer system
US8407401B2 (en) * 2008-11-26 2013-03-26 Core Wireless Licensing S.A.R.L. Methods, apparatuses, and computer program products for enhancing memory erase functionality
US20100131726A1 (en) * 2008-11-26 2010-05-27 Nokia Corporation Methods, apparatuses, and computer program products for enhancing memory erase functionality
US7940568B1 (en) 2008-12-30 2011-05-10 Micron Technology, Inc. Dynamic polarization for reducing stress induced leakage current
US20100174865A1 (en) * 2009-01-06 2010-07-08 International Business Machines Corporation Dynamic data security erasure
US20100199020A1 (en) * 2009-02-04 2010-08-05 Silicon Storage Technology, Inc. Non-volatile memory subsystem and a memory controller therefor
US8036016B2 (en) * 2009-09-01 2011-10-11 Micron Technology, Inc. Maintenance process to enhance memory endurance
US8169833B2 (en) * 2009-10-01 2012-05-01 Micron Technology, Inc. Partitioning process to improve memory cell retention
US20110161560A1 (en) * 2009-12-31 2011-06-30 Hutchison Neil D Erase command caching to improve erase performance on flash memory
US9134918B2 (en) * 2009-12-31 2015-09-15 Sandisk Technologies Inc. Physical compression of data with flat or systematic pattern
US8706983B2 (en) 2010-06-30 2014-04-22 Sandisk Technologies Inc. Garbage collection of memory blocks using volatile memory
US8626986B2 (en) 2010-06-30 2014-01-07 Sandisk Technologies Inc. Pre-emptive garbage collection of memory blocks
US20120036301A1 (en) * 2010-08-03 2012-02-09 Caspole Eric R Processor support for filling memory regions
US8762627B2 (en) 2011-12-21 2014-06-24 Sandisk Technologies Inc. Memory logical defragmentation during garbage collection
US9754648B2 (en) 2012-10-26 2017-09-05 Micron Technology, Inc. Apparatuses and methods for memory operations having variable latencies
US20140129758A1 (en) * 2012-11-06 2014-05-08 Spansion Llc Wear leveling in flash memory devices with trim commands
US9330007B2 (en) 2012-11-30 2016-05-03 Dell Products, Lp Systems and methods for dynamic optimization of flash cache in storage devices
US9734097B2 (en) 2013-03-15 2017-08-15 Micron Technology, Inc. Apparatuses and methods for variable latency memory operations
US9727493B2 (en) 2013-08-14 2017-08-08 Micron Technology, Inc. Apparatuses and methods for providing data to a configurable storage area
US10013280B2 (en) * 2013-09-30 2018-07-03 Dell Products, Lp System and method for host-assisted background media scan (BMS)
KR102285462B1 (ko) 2014-03-26 2021-08-05 삼성전자주식회사 불휘발성 메모리 및 메모리 컨트롤러를 포함하는 메모리 시스템의 동작 방법
US10365835B2 (en) 2014-05-28 2019-07-30 Micron Technology, Inc. Apparatuses and methods for performing write count threshold wear leveling operations
CN104298766B (zh) * 2014-10-28 2018-03-20 四川秘无痕信息安全技术有限责任公司 一种清除SQLite数据库中数据的方法
CN104407822A (zh) * 2014-12-17 2015-03-11 四川秘无痕信息安全技术有限责任公司 一种清除安卓手机碎片数据的方法
CN104504117A (zh) * 2014-12-31 2015-04-08 四川秘无痕信息安全技术有限责任公司 一种清除正常文件尾部碎片数据的方法
US9891833B2 (en) 2015-10-22 2018-02-13 HoneycombData Inc. Eliminating garbage collection in nand flash devices
US10866746B2 (en) * 2017-12-28 2020-12-15 Silicon Motion Inc. Memory addressing methods and associated controller, memory device and host
CN108563586B (zh) * 2018-04-12 2021-11-02 华中科技大学 一种分离固态盘中垃圾回收数据与用户数据的方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05151097A (ja) * 1991-11-28 1993-06-18 Fujitsu Ltd 書換回数制限型メモリのデータ管理方式
JPH05233426A (ja) * 1992-02-20 1993-09-10 Fujitsu Ltd フラッシュ・メモリ使用方法
JP3215237B2 (ja) * 1993-10-01 2001-10-02 富士通株式会社 記憶装置および記憶装置の書き込み/消去方法
JP3706167B2 (ja) * 1995-02-16 2005-10-12 株式会社ルネサステクノロジ 半導体ディスク装置
US6081878A (en) * 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5978808A (en) * 1995-12-27 1999-11-02 Intel Corporation Virtual small block file manager for flash memory array
US5896393A (en) * 1996-05-23 1999-04-20 Advanced Micro Devices, Inc. Simplified file management scheme for flash memory
JP3718578B2 (ja) * 1997-06-25 2005-11-24 ソニー株式会社 メモリ管理方法及びメモリ管理装置
JP3898305B2 (ja) * 1997-10-31 2007-03-28 富士通株式会社 半導体記憶装置、半導体記憶装置の制御装置及び制御方法
CN1126037C (zh) * 1998-09-04 2003-10-29 奥托·穆勒 用于具有限制删除频率的存储器的存取控制的方法
US6279114B1 (en) * 1998-11-04 2001-08-21 Sandisk Corporation Voltage negotiation in a single host multiple cards system
GB9903490D0 (en) * 1999-02-17 1999-04-07 Memory Corp Plc Memory system
US6427186B1 (en) * 1999-03-30 2002-07-30 Frank (Fong-Long) Lin Memory, interface system and method for mapping logical block numbers to physical sector numbers in a flash memory, using a master index table and a table of physical sector numbers
CN100442393C (zh) * 1999-10-21 2008-12-10 松下电器产业株式会社 半导体存储卡的访问装置、初始化方法和半导体存储卡
DE60009031D1 (de) 2000-03-28 2004-04-22 St Microelectronics Srl Verfahren zur logischen Aufteilung einer nichtflüchtigen Speichermatrix
TWI240864B (en) * 2001-06-13 2005-10-01 Hitachi Ltd Memory device
KR100437609B1 (ko) * 2001-09-20 2004-06-30 주식회사 하이닉스반도체 반도체 메모리 장치의 어드레스 변환 방법 및 그 장치
DE10341618A1 (de) * 2003-09-10 2005-05-04 Hyperstone Ag Verwaltung gelöschter Blöcke in Flash-Speichern
DE10349595B3 (de) * 2003-10-24 2004-12-09 Hyperstone Ag Verfahren zum Schreiben von Speichersektoren in einem blockweise löschbaren Speicher
US20060184718A1 (en) 2005-02-16 2006-08-17 Sinclair Alan W Direct file data programming and deletion in flash memories

Also Published As

Publication number Publication date
EP2115595B1 (fr) 2016-04-06
US7515500B2 (en) 2009-04-07
WO2008084291A3 (fr) 2008-09-04
CN101627373B (zh) 2012-10-10
WO2008084291A2 (fr) 2008-07-17
CA2673434A1 (fr) 2008-07-17
CN101627373A (zh) 2010-01-13
EP2115595A2 (fr) 2009-11-11
HK1137248A1 (en) 2010-07-23
US20080155301A1 (en) 2008-06-26

Similar Documents

Publication Publication Date Title
CA2673434C (fr) Amelioration des performances d'un dispositif de memoire grace a un mecanisme de pre-effacement
US8838875B2 (en) Systems, methods and computer program products for operating a data processing system in which a file delete command is sent to an external storage device for invalidating data thereon
US9940040B2 (en) Systems, solid-state mass storage devices, and methods for host-assisted garbage collection
US10007468B2 (en) Method and apparatus for erasing data in data section in flash memory
KR100843543B1 (ko) 플래시 메모리 장치를 포함하는 시스템 및 그것의 데이터복구 방법
US8521949B2 (en) Data deleting method and apparatus
US9582416B2 (en) Data erasing method, memory control circuit unit and memory storage apparatus
US20100332732A1 (en) Memory systems and mapping methods thereof
CN112231244B (zh) 应用于SoftSIM的SIM卡文件擦写系统、方法和可读存储介质
CN105868122A (zh) 快闪存储设备的数据处理方法及装置
EP3346387B1 (fr) Système de stockage et procédé de récupération d'espace mémoire système
US20130166828A1 (en) Data update apparatus and method for flash memory file system
CN102576333A (zh) 非易失性存储器中的数据高速缓存
WO2011095516A1 (fr) Procédé et système pour le stockage en masse sur une mémoire flash
CN101231617A (zh) 闪存设备的数据处理方法
CN106326132B (zh) 存储系统、存储管理装置、存储器、混合存储装置及存储管理方法
US20100318726A1 (en) Memory system and memory system managing method
US20100180072A1 (en) Memory controller, nonvolatile memory device, file system, nonvolatile memory system, data writing method and data writing program
HK1137248B (en) Memory device performance enhancement through pre-erase mechanism
CN117742582A (zh) 一种高效率垃圾回收方法及存储装置
US20090319587A1 (en) Memory controller, nonvolatile memory device, and nonvolatile memory system
KR20260018542A (ko) 스토리지 시스템 및 그 동작 방법
CN103038753A (zh) 用基于日志的缓冲向基于nand存储块的文件系统写入的方法

Legal Events

Date Code Title Description
EEER Examination request
MPN Maintenance fee for patent paid

Free format text: FEE DESCRIPTION TEXT: MF (PATENT, 18TH ANNIV.) - STANDARD

Year of fee payment: 18

U00 Fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U00-U101 (AS PROVIDED BY THE NATIONAL OFFICE); EVENT TEXT: MAINTENANCE REQUEST RECEIVED

Effective date: 20251007

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-U102 (AS PROVIDED BY THE NATIONAL OFFICE); EVENT TEXT: MAINTENANCE FEE PAYMENT PAID IN FULL

Effective date: 20251007