CA2682092C - Cellule de memoire non reprogrammable du type et - Google Patents

Cellule de memoire non reprogrammable du type et Download PDF

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Publication number
CA2682092C
CA2682092C CA2682092A CA2682092A CA2682092C CA 2682092 C CA2682092 C CA 2682092C CA 2682092 A CA2682092 A CA 2682092A CA 2682092 A CA2682092 A CA 2682092A CA 2682092 C CA2682092 C CA 2682092C
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Canada
Prior art keywords
fuse
memory cell
memory
voltage level
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CA2682092A
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English (en)
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CA2682092A1 (fr
Inventor
Wlodek Kurjanowicz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Synopsys Inc
Original Assignee
Sidense Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sidense Corp filed Critical Sidense Corp
Priority to CA2682092A priority Critical patent/CA2682092C/fr
Publication of CA2682092A1 publication Critical patent/CA2682092A1/fr
Application granted granted Critical
Publication of CA2682092C publication Critical patent/CA2682092C/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

L'invention concerne une cellule de mémoire anti-fusible de type ET, ainsi qu'une mémoire se composant de cellules de mémoire anti-fusibles de type ET. Des chaînes de cellules anti-fusibles de type et sont reliées en séries les unes avec les autres. Chaque cellule anti-fusible de type ET comprend un transistor d'accès branchable en série à la ligne de bits ou aux transistors d'accès d'autres cellules anti-fusibles de type et, ainsi qu'un dispositif anti-fusible. La région de canal du transistor d'accès est reliée à la région de canal du dispositif anti-fusible. Les deux régions de canal sont couvertes par la même ligne de mot. La ligne de mot est poussée au niveau de tension de programmation pour programmer le dispositif anti-fusible, ou à un niveau de tension de lecture pour lire le dispositif anti-fusible.
CA2682092A 2009-10-30 2009-10-30 Cellule de memoire non reprogrammable du type et Active CA2682092C (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CA2682092A CA2682092C (fr) 2009-10-30 2009-10-30 Cellule de memoire non reprogrammable du type et

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA2682092A CA2682092C (fr) 2009-10-30 2009-10-30 Cellule de memoire non reprogrammable du type et

Publications (2)

Publication Number Publication Date
CA2682092A1 CA2682092A1 (fr) 2010-01-05
CA2682092C true CA2682092C (fr) 2010-11-02

Family

ID=41508489

Family Applications (1)

Application Number Title Priority Date Filing Date
CA2682092A Active CA2682092C (fr) 2009-10-30 2009-10-30 Cellule de memoire non reprogrammable du type et

Country Status (1)

Country Link
CA (1) CA2682092C (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9123572B2 (en) 2004-05-06 2015-09-01 Sidense Corporation Anti-fuse memory cell
WO2017117663A1 (fr) * 2016-01-08 2017-07-13 Sidense Corp. Génération de valeur de fonction physique non clonable (puf) au moyen d'un réseau de mémoires anti-fusible
US20240312543A1 (en) * 2020-02-27 2024-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. One-time-programmable memory

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI511144B (zh) * 2014-04-03 2015-12-01 席登斯公司 抗熔絲記憶單元
CN115910990B (zh) * 2023-02-23 2023-05-23 长鑫存储技术有限公司 反熔丝结构及反熔丝结构的制备方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9123572B2 (en) 2004-05-06 2015-09-01 Sidense Corporation Anti-fuse memory cell
WO2017117663A1 (fr) * 2016-01-08 2017-07-13 Sidense Corp. Génération de valeur de fonction physique non clonable (puf) au moyen d'un réseau de mémoires anti-fusible
US10032521B2 (en) 2016-01-08 2018-07-24 Synopsys, Inc. PUF value generation using an anti-fuse memory array
US20240312543A1 (en) * 2020-02-27 2024-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. One-time-programmable memory
US12518841B2 (en) * 2020-02-27 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. One-time-programmable memory

Also Published As

Publication number Publication date
CA2682092A1 (fr) 2010-01-05

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