CA2683524A1 - Cellule photovoltaique a emetteur peu profond - Google Patents
Cellule photovoltaique a emetteur peu profond Download PDFInfo
- Publication number
- CA2683524A1 CA2683524A1 CA002683524A CA2683524A CA2683524A1 CA 2683524 A1 CA2683524 A1 CA 2683524A1 CA 002683524 A CA002683524 A CA 002683524A CA 2683524 A CA2683524 A CA 2683524A CA 2683524 A1 CA2683524 A1 CA 2683524A1
- Authority
- CA
- Canada
- Prior art keywords
- reflective coating
- conductive anti
- passivation layer
- conductors
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 264
- 238000002161 passivation Methods 0.000 claims abstract description 159
- 239000004065 semiconductor Substances 0.000 claims abstract description 81
- 239000000463 material Substances 0.000 claims abstract description 48
- 230000003667 anti-reflective effect Effects 0.000 claims abstract description 10
- 239000004020 conductor Substances 0.000 claims description 137
- 238000000034 method Methods 0.000 claims description 121
- 238000000576 coating method Methods 0.000 claims description 90
- 239000011248 coating agent Substances 0.000 claims description 89
- 239000000853 adhesive Substances 0.000 claims description 69
- 230000001070 adhesive effect Effects 0.000 claims description 68
- 229910045601 alloy Inorganic materials 0.000 claims description 61
- 239000000956 alloy Substances 0.000 claims description 61
- 229910052782 aluminium Inorganic materials 0.000 claims description 55
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000003825 pressing Methods 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 229910006854 SnOx Inorganic materials 0.000 claims description 15
- 229910003087 TiOx Inorganic materials 0.000 claims description 15
- 229910007667 ZnOx Inorganic materials 0.000 claims description 15
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052681 coesite Inorganic materials 0.000 claims description 14
- 229910052906 cristobalite Inorganic materials 0.000 claims description 14
- 229910052738 indium Inorganic materials 0.000 claims description 14
- 229910052682 stishovite Inorganic materials 0.000 claims description 14
- 239000011135 tin Substances 0.000 claims description 14
- 229910052718 tin Inorganic materials 0.000 claims description 14
- 229910052905 tridymite Inorganic materials 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 12
- 229910000679 solder Inorganic materials 0.000 claims description 12
- -1 InSnOx Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000003631 wet chemical etching Methods 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 238000000608 laser ablation Methods 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 5
- 229960002050 hydrofluoric acid Drugs 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 239000011800 void material Substances 0.000 claims description 2
- 239000002674 ointment Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 29
- 229910052709 silver Inorganic materials 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000010979 ruby Substances 0.000 description 2
- 229910001750 ruby Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW96117614 | 2007-05-17 | ||
| TW96117614 | 2007-05-17 | ||
| US11/751,524 US20080290368A1 (en) | 2007-05-21 | 2007-05-21 | Photovoltaic cell with shallow emitter |
| US11/751,524 | 2007-05-21 | ||
| PCT/CA2008/000349 WO2008141415A1 (fr) | 2007-05-17 | 2008-02-22 | Cellule photovoltaïque à émetteur peu profond |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2683524A1 true CA2683524A1 (fr) | 2008-11-27 |
Family
ID=40031346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002683524A Abandoned CA2683524A1 (fr) | 2007-05-17 | 2008-02-22 | Cellule photovoltaique a emetteur peu profond |
Country Status (2)
| Country | Link |
|---|---|
| CA (1) | CA2683524A1 (fr) |
| WO (1) | WO2008141415A1 (fr) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8933320B2 (en) | 2008-01-18 | 2015-01-13 | Tenksolar, Inc. | Redundant electrical architecture for photovoltaic modules |
| US8053867B2 (en) | 2008-08-20 | 2011-11-08 | Honeywell International Inc. | Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants |
| US7951696B2 (en) | 2008-09-30 | 2011-05-31 | Honeywell International Inc. | Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes |
| US8518170B2 (en) | 2008-12-29 | 2013-08-27 | Honeywell International Inc. | Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks |
| IN2012DN00387A (fr) | 2009-06-15 | 2015-08-21 | Tenksolar Inc | |
| US8324089B2 (en) | 2009-07-23 | 2012-12-04 | Honeywell International Inc. | Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions |
| US9773933B2 (en) | 2010-02-23 | 2017-09-26 | Tenksolar, Inc. | Space and energy efficient photovoltaic array |
| US9299861B2 (en) | 2010-06-15 | 2016-03-29 | Tenksolar, Inc. | Cell-to-grid redundandt photovoltaic system |
| CN102651406A (zh) * | 2011-02-23 | 2012-08-29 | 茂迪股份有限公司 | 晶硅太阳能电池的制造方法 |
| CN102157585B (zh) * | 2011-02-28 | 2013-01-23 | 中山大学 | 一种均匀浅发射极太阳电池的制备方法 |
| US8629294B2 (en) | 2011-08-25 | 2014-01-14 | Honeywell International Inc. | Borate esters, boron-comprising dopants, and methods of fabricating boron-comprising dopants |
| US8586397B2 (en) | 2011-09-30 | 2013-11-19 | Sunpower Corporation | Method for forming diffusion regions in a silicon substrate |
| US8992803B2 (en) | 2011-09-30 | 2015-03-31 | Sunpower Corporation | Dopant ink composition and method of fabricating a solar cell there from |
| US9559228B2 (en) * | 2011-09-30 | 2017-01-31 | Sunpower Corporation | Solar cell with doped groove regions separated by ridges |
| US8975170B2 (en) | 2011-10-24 | 2015-03-10 | Honeywell International Inc. | Dopant ink compositions for forming doped regions in semiconductor substrates, and methods for fabricating dopant ink compositions |
| TW201327897A (zh) * | 2011-10-28 | 2013-07-01 | 應用材料股份有限公司 | 光伏單元的背點接觸製程 |
| US20130199604A1 (en) * | 2012-02-06 | 2013-08-08 | Silicon Solar Solutions | Solar cells and methods of fabrication thereof |
| US9960287B2 (en) | 2014-02-11 | 2018-05-01 | Picasolar, Inc. | Solar cells and methods of fabrication thereof |
| CN111106183A (zh) * | 2019-12-26 | 2020-05-05 | 湖南红太阳光电科技有限公司 | 利用管式pecvd制备背面全钝化接触太阳电池的方法及背面全钝化接触太阳电池 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3722326B2 (ja) * | 1996-12-20 | 2005-11-30 | 三菱電機株式会社 | 太陽電池の製造方法 |
| US6552414B1 (en) * | 1996-12-24 | 2003-04-22 | Imec Vzw | Semiconductor device with selectively diffused regions |
| DE102004036734A1 (de) * | 2004-07-29 | 2006-03-23 | Konarka Technologies, Inc., Lowell | Kostengünstige organische Solarzelle und Verfahren zur Herstellung |
| US7375378B2 (en) * | 2005-05-12 | 2008-05-20 | General Electric Company | Surface passivated photovoltaic devices |
-
2008
- 2008-02-22 CA CA002683524A patent/CA2683524A1/fr not_active Abandoned
- 2008-02-22 WO PCT/CA2008/000349 patent/WO2008141415A1/fr not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008141415A1 (fr) | 2008-11-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |