CA2780913A1 - Procede de fabrication de cellules photovoltaiques, cellules photovoltaiques produites selon ce procede, et utilisations de celles-ci - Google Patents

Procede de fabrication de cellules photovoltaiques, cellules photovoltaiques produites selon ce procede, et utilisations de celles-ci Download PDF

Info

Publication number: CA2780913A1
Authority: CA; Canada
Prior art keywords: layer; dopant; photovoltaic cell; substrate; concentration
Prior art date: 2009-11-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

CA2780913A

Other languages

English (en)

Inventor

Marat Zaks

Galina Kolomoets

Andrey Sitnikov

Oleg Solodukha

Lev Kreinin

Naftali P. Eisenberg

Ninel Bordin

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

B-Solar Ltd

SOLAR WIND TECHNOLOGIES Inc

Original Assignee

B-Solar Ltd

SOLAR WIND TECHNOLOGIES Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2009-11-18

Filing date

2010-11-17

Publication date

2011-05-26

2009-11-18 Priority claimed from US12/591,390 external-priority patent/US8586862B2/en

2009-11-18 Priority claimed from US12/591,391 external-priority patent/US20110114147A1/en

2010-11-17 Application filed by B-Solar Ltd, SOLAR WIND TECHNOLOGIES Inc filed Critical B-Solar Ltd

2011-05-26 Publication of CA2780913A1 publication Critical patent/CA2780913A1/fr

Status Abandoned legal-status Critical Current

Links

238000004519 manufacturing process Methods 0.000 title description 11
239000002019 doping agent Substances 0.000 claims abstract description 167
239000000758 substrate Substances 0.000 claims abstract description 106
238000000034 method Methods 0.000 claims abstract description 103
239000006117 anti-reflective coating Substances 0.000 claims abstract description 72
229910052710 silicon Inorganic materials 0.000 claims description 37
238000005530 etching Methods 0.000 claims description 36
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
239000010703 silicon Substances 0.000 claims description 35
229910052581 Si3N4 Inorganic materials 0.000 claims description 28
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 27
238000007669 thermal treatment Methods 0.000 claims description 25
239000004065 semiconductor Substances 0.000 claims description 15
238000010438 heat treatment Methods 0.000 claims description 12
239000000126 substance Substances 0.000 claims description 9
230000007423 decrease Effects 0.000 claims description 8
238000000576 coating method Methods 0.000 description 38
239000011248 coating agent Substances 0.000 description 33
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 21
229910052698 phosphorus Inorganic materials 0.000 description 21
239000011574 phosphorus Substances 0.000 description 21
125000004429 atom Chemical group 0.000 description 20
230000015572 biosynthetic process Effects 0.000 description 17
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 16
230000001965 increasing effect Effects 0.000 description 15
GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 13
DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 13
238000009792 diffusion process Methods 0.000 description 10
239000000463 material Substances 0.000 description 10
HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
238000005286 illumination Methods 0.000 description 9
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
230000003667 anti-reflective effect Effects 0.000 description 8
239000000377 silicon dioxide Substances 0.000 description 8
239000000243 solution Substances 0.000 description 8
230000008569 process Effects 0.000 description 7
230000005855 radiation Effects 0.000 description 7
235000012239 silicon dioxide Nutrition 0.000 description 7
235000012431 wafers Nutrition 0.000 description 7
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
229910052796 boron Inorganic materials 0.000 description 6
238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
230000006798 recombination Effects 0.000 description 6
238000005215 recombination Methods 0.000 description 6
238000006243 chemical reaction Methods 0.000 description 5
230000000694 effects Effects 0.000 description 5
230000005611 electricity Effects 0.000 description 5
238000001004 secondary ion mass spectrometry Methods 0.000 description 5
229910052810 boron oxide Inorganic materials 0.000 description 4
150000001875 compounds Chemical class 0.000 description 4
238000000151 deposition Methods 0.000 description 4
230000008021 deposition Effects 0.000 description 4
JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 4
230000005670 electromagnetic radiation Effects 0.000 description 4
238000005259 measurement Methods 0.000 description 4
239000000203 mixture Substances 0.000 description 4
238000012360 testing method Methods 0.000 description 4
KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
229910052785 arsenic Inorganic materials 0.000 description 3
238000005229 chemical vapour deposition Methods 0.000 description 3
YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 3
239000012535 impurity Substances 0.000 description 3
229910052757 nitrogen Inorganic materials 0.000 description 3
238000010561 standard procedure Methods 0.000 description 3
PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 3
239000004408 titanium dioxide Substances 0.000 description 3
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
239000012670 alkaline solution Substances 0.000 description 2
238000013459 approach Methods 0.000 description 2
238000003491 array Methods 0.000 description 2
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
239000002800 charge carrier Substances 0.000 description 2
230000002596 correlated effect Effects 0.000 description 2
230000003247 decreasing effect Effects 0.000 description 2
230000007547 defect Effects 0.000 description 2
230000002708 enhancing effect Effects 0.000 description 2
239000001257 hydrogen Substances 0.000 description 2
229910052739 hydrogen Inorganic materials 0.000 description 2
125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
239000004615 ingredient Substances 0.000 description 2
230000007246 mechanism Effects 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
239000012299 nitrogen atmosphere Substances 0.000 description 2
239000005360 phosphosilicate glass Substances 0.000 description 2
-1 poly(ethyl-vinyl acetate) Polymers 0.000 description 2
229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
238000000926 separation method Methods 0.000 description 2
238000011282 treatment Methods 0.000 description 2
238000010521 absorption reaction Methods 0.000 description 1
239000000654 additive Substances 0.000 description 1
230000000996 additive effect Effects 0.000 description 1
229910045601 alloy Inorganic materials 0.000 description 1
239000000956 alloy Substances 0.000 description 1
229940095054 ammoniac Drugs 0.000 description 1
239000007864 aqueous solution Substances 0.000 description 1
230000000903 blocking effect Effects 0.000 description 1
238000004364 calculation method Methods 0.000 description 1
230000001413 cellular effect Effects 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
238000010276 construction Methods 0.000 description 1
230000000875 corresponding effect Effects 0.000 description 1
239000013078 crystal Substances 0.000 description 1
230000002939 deleterious effect Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
239000005038 ethylene vinyl acetate Substances 0.000 description 1
239000012467 final product Substances 0.000 description 1
238000010304 firing Methods 0.000 description 1
239000002803 fossil fuel Substances 0.000 description 1
239000007789 gas Substances 0.000 description 1
239000011521 glass Substances 0.000 description 1
BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
238000010348 incorporation Methods 0.000 description 1
230000031700 light absorption Effects 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
230000005693 optoelectronics Effects 0.000 description 1
238000002161 passivation Methods 0.000 description 1
230000002093 peripheral effect Effects 0.000 description 1
238000001020 plasma etching Methods 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
238000012545 processing Methods 0.000 description 1
239000000047 product Substances 0.000 description 1
230000009467 reduction Effects 0.000 description 1
239000000523 sample Substances 0.000 description 1
238000005070 sampling Methods 0.000 description 1
238000007650 screen-printing Methods 0.000 description 1
239000000779 smoke Substances 0.000 description 1
238000002798 spectrophotometry method Methods 0.000 description 1
238000001228 spectrum Methods 0.000 description 1
OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/148—Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

Photovoltaic Devices (AREA)

CA2780913A 2009-11-18 2010-11-17 Procede de fabrication de cellules photovoltaiques, cellules photovoltaiques produites selon ce procede, et utilisations de celles-ci Abandoned CA2780913A1 (fr)

Applications Claiming Priority (5)

Application Number	Priority Date	Filing Date	Title
US12/591,391		2009-11-18
US12/591,390 US8586862B2 (en)	2009-11-18	2009-11-18	Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US12/591,391 US20110114147A1 (en)	2009-11-18	2009-11-18	Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US12/591,390		2009-11-18
PCT/IB2010/055221 WO2011061694A2 (fr)	2009-11-18	2010-11-17	Procédé de fabrication de cellules photovoltaïques, cellules photovoltaïques produites selon ce procédé, et utilisations de celles-ci

Publications (1)

Publication Number	Publication Date
CA2780913A1 true CA2780913A1 (fr)	2011-05-26

Family

ID=44060135

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
CA2781085A Abandoned CA2781085A1 (fr)	2009-11-18	2010-11-17	Procede de fabrication de cellules photovoltaiques, cellules photovoltaiques produites selon ce procede, et utilisations de celles-ci
CA2780913A Abandoned CA2780913A1 (fr)	2009-11-18	2010-11-17	Procede de fabrication de cellules photovoltaiques, cellules photovoltaiques produites selon ce procede, et utilisations de celles-ci

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
CA2781085A Abandoned CA2781085A1 (fr)	2009-11-18	2010-11-17	Procede de fabrication de cellules photovoltaiques, cellules photovoltaiques produites selon ce procede, et utilisations de celles-ci

Country Status (5)

Country	Link
EP (2)	EP2502277A2 (fr)
JP (2)	JP6027443B2 (fr)
CN (2)	CN102754215A (fr)
CA (2)	CA2781085A1 (fr)
WO (2)	WO2011061694A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US8586862B2 (en)	2009-11-18	2013-11-19	Solar Wind Technologies, Inc.	Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US8796060B2 (en)	2009-11-18	2014-08-05	Solar Wind Technologies, Inc.	Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
KR101627029B1 (ko) *	2014-02-20	2016-06-03	제일모직주식회사	Ibc 태양전지의 제조방법
KR101627028B1 (ko) *	2014-02-20	2016-06-03	제일모직주식회사	양면형 태양전지의 제조방법
CN104051575B (zh) *	2014-06-20	2016-08-17	润峰电力有限公司	一种仿生双面受光太阳能电池的制作工艺
KR20180100301A (ko)	2015-10-25	2018-09-10	솔라라운드 리미티드	양면형 전지 제조 방법
CN107340785B (zh) *	2016-12-15	2021-05-18	江苏林洋新能源科技有限公司	一种基于智能化控制的双面光伏电池组件跟踪方法及控制器
CH713453A1 (de)	2017-02-13	2018-08-15	Evatec Ag	Verfahren zur Herstellung eines Substrates mit einer bordotierten Oberfläche.
AU2018399942B2 (en) *	2018-01-08	2023-02-02	Solaround Ltd.	Bifacial photovoltaic cell and method of fabrication
WO2020154784A1 (fr) *	2019-01-30	2020-08-06	Tégula Soluções Para Telhados Ltda	Cellule photovoltaïque, procédé de fabrication de cellule photovoltaïque encapsulée, ensemble de connextion électrique pour tuile photovoltaïque et tuile photovoltaïque
CN114649427B (zh) *	2021-09-14	2023-09-12	浙江晶科能源有限公司	太阳能电池及光伏组件
CN119850580B (zh) *	2025-01-03	2025-11-21	香港理工大学深圳研究院	一种接触网零部件检测方法、装置、终端及存储介质

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US4322571A (en) *	1980-07-17	1982-03-30	The Boeing Company	Solar cells and methods for manufacture thereof
US4989059A (en)	1988-05-13	1991-01-29	Mobil Solar Energy Corporation	Solar cell with trench through pn junction
DE19522539C2 (de) *	1995-06-21	1997-06-12	Fraunhofer Ges Forschung	Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben
CA2232857C (fr) *	1995-10-05	2003-05-13	Jalal Salami	Pile solaire a emetteur localement profondement diffuse auto-aligne
US5871591A (en)	1996-11-01	1999-02-16	Sandia Corporation	Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process
US6552414B1 (en)	1996-12-24	2003-04-22	Imec Vzw	Semiconductor device with selectively diffused regions
US6180869B1 (en)	1997-05-06	2001-01-30	Ebara Solar, Inc.	Method and apparatus for self-doping negative and positive electrodes for silicon solar cells and other devices
RU2139601C1 (ru)	1998-12-04	1999-10-10	ООО Научно-производственная фирма "Кварк"	Способ изготовления солнечного элемента с n+-p-p+ структурой
TW419833B (en)	1999-07-23	2001-01-21	Ind Tech Res Inst	Manufacturing method of solar cell
CN1284248C (zh) *	2000-10-06	2006-11-08	信越半导体株式会社	太阳能电池及其制造方法
JP4232597B2 (ja) *	2003-10-10	2009-03-04	株式会社日立製作所	シリコン太陽電池セルとその製造方法
DE102004036220B4 (de)	2004-07-26	2009-04-02	Jürgen H. Werner	Verfahren zur Laserdotierung von Festkörpern mit einem linienfokussierten Laserstrahl
US20070113881A1 (en) *	2005-11-22	2007-05-24	Guardian Industries Corp.	Method of making solar cell with antireflective coating using combustion chemical vapor deposition (CCVD) and corresponding product
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DE102007036921A1 (de)	2007-02-28	2008-09-04	Centrotherm Photovoltaics Technology Gmbh	Verfahren zur Herstellung von Siliziumsolarzellen
EP2165371B1 (fr) *	2007-07-18	2012-02-29	Imec	Procédé pour produire une structure d'émetteur et structures d'émetteur obtenues par ce procédé
WO2009118861A1 (fr) *	2008-03-27	2009-10-01	三菱電機株式会社	Dispositif d’alimentation photovoltaïque et procédé de fabrication de celui-ci
WO2009133607A1 (fr) *	2008-04-30	2009-11-05	三菱電機株式会社	Dispositif photovoltaïque et son procédé de fabrication

2010
- 2010-11-17 WO PCT/IB2010/055221 patent/WO2011061694A2/fr not_active Ceased
- 2010-11-17 WO PCT/IB2010/055219 patent/WO2011061693A2/fr not_active Ceased
- 2010-11-17 EP EP10793317A patent/EP2502277A2/fr not_active Withdrawn
- 2010-11-17 CN CN2010800616051A patent/CN102754215A/zh active Pending
- 2010-11-17 EP EP10793049A patent/EP2502278A2/fr not_active Withdrawn
- 2010-11-17 JP JP2012539461A patent/JP6027443B2/ja not_active Expired - Fee Related
- 2010-11-17 CN CN201080061602.8A patent/CN102725854B/zh not_active Expired - Fee Related
- 2010-11-17 CA CA2781085A patent/CA2781085A1/fr not_active Abandoned
- 2010-11-17 CA CA2780913A patent/CA2780913A1/fr not_active Abandoned
- 2010-11-17 JP JP2012539462A patent/JP2013511839A/ja active Pending

Also Published As

Publication number	Publication date
WO2011061694A3 (fr)	2012-01-19
CA2781085A1 (fr)	2011-05-26
JP2013511838A (ja)	2013-04-04
EP2502278A2 (fr)	2012-09-26
CN102725854B (zh)	2015-11-25
JP2013511839A (ja)	2013-04-04
WO2011061693A2 (fr)	2011-05-26
CN102725854A (zh)	2012-10-10
WO2011061694A2 (fr)	2011-05-26
JP6027443B2 (ja)	2016-11-16
EP2502277A2 (fr)	2012-09-26
WO2011061693A3 (fr)	2012-01-05
CN102754215A (zh)	2012-10-24

Legal Events

Date	Code	Title	Description
2015-01-13	FZDE	Discontinued	Effective date: 20141118

Publication	Publication Date	Title
CA2780913A1 (fr)	2011-05-26	Procede de fabrication de cellules photovoltaiques, cellules photovoltaiques produites selon ce procede, et utilisations de celles-ci
US20110114147A1 (en)	2011-05-19	Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US8586862B2 (en)	2013-11-19	Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US20140251424A1 (en)	2014-09-11	Solar cell
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