CA799643A - Mos field effect transistor - Google Patents

Mos field effect transistor

Info

Publication number: CA799643A
Authority: CA; Canada
Prior art keywords: field effect; effect transistor; mos field; mos; transistor
Prior art date: 1968-11-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

CA799643A

Inventor

Arita Shigeru

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Panasonic Holdings Corp

Original Assignee

Matsushita Electronics Corp

Publication date

1968-11-19

1968-11-19 Application granted granted Critical

1968-11-19 Publication of CA799643A publication Critical patent/CA799643A/en

Status Expired legal-status Critical Current

Links

230000005669 field effect Effects 0.000 title 1

CA799643A Mos field effect transistor Expired CA799643A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CA799643T

Publications (1)

Publication Number	Publication Date
CA799643A true CA799643A (en)	1968-11-19

Family

ID=36267655

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA799643A Expired CA799643A (en)			Mos field effect transistor

Country Status (1)

Country	Link
CA (1)	CA799643A (en)

0
- CA CA799643A patent/CA799643A/en not_active Expired

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