CA941964A - Electronic memory storage element - Google Patents
Electronic memory storage elementInfo
- Publication number
- CA941964A CA941964A CA075,342A CA75342A CA941964A CA 941964 A CA941964 A CA 941964A CA 75342 A CA75342 A CA 75342A CA 941964 A CA941964 A CA 941964A
- Authority
- CA
- Canada
- Prior art keywords
- storage element
- memory storage
- electronic memory
- electronic
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005055 memory storage Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80842169A | 1969-03-19 | 1969-03-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA941964A true CA941964A (en) | 1974-02-12 |
Family
ID=25198716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA075,342A Expired CA941964A (en) | 1969-03-19 | 1970-02-19 | Electronic memory storage element |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5623237B1 (fr) |
| CA (1) | CA941964A (fr) |
| CH (1) | CH540548A (fr) |
| DE (1) | DE2013233A1 (fr) |
| FR (1) | FR2037223B1 (fr) |
| GB (1) | GB1292265A (fr) |
| SE (3) | SE382275B (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037015U (ja) * | 1983-08-18 | 1985-03-14 | 丸山 スミエ | シヤツのポケツト |
-
1970
- 1970-02-19 CA CA075,342A patent/CA941964A/en not_active Expired
- 1970-02-25 GB GB9148/70A patent/GB1292265A/en not_active Expired
- 1970-03-17 FR FR7009566A patent/FR2037223B1/fr not_active Expired
- 1970-03-17 SE SE7003519A patent/SE382275B/xx unknown
- 1970-03-19 JP JP2279370A patent/JPS5623237B1/ja active Pending
- 1970-03-19 DE DE19702013233 patent/DE2013233A1/de active Pending
- 1970-03-19 CH CH417170A patent/CH540548A/fr not_active IP Right Cessation
-
1974
- 1974-11-29 SE SE7415002A patent/SE7415002L/ not_active Application Discontinuation
-
1975
- 1975-03-03 SE SE7502344A patent/SE396495B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB1292265A (en) | 1972-10-11 |
| CH540548A (fr) | 1973-08-15 |
| SE7415002L (fr) | 1974-11-29 |
| SE382275B (sv) | 1976-01-19 |
| DE2013233A1 (fr) | 1970-10-01 |
| FR2037223B1 (fr) | 1974-05-03 |
| FR2037223A1 (fr) | 1970-12-31 |
| JPS5623237B1 (fr) | 1981-05-29 |
| SE396495B (sv) | 1977-09-19 |
| SE7502344L (fr) | 1975-03-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1006568A (en) | Electronic storage tube | |
| CA925617A (en) | Read only memory | |
| AU2177170A (en) | Information storage devices | |
| CA946666A (en) | Hologram memory | |
| CA983167A (en) | Memory cell circuit | |
| CA922559A (en) | Hologram memory | |
| CA933655A (en) | Electronic resistance memory | |
| ZA704065B (en) | Read only memory | |
| CA927919A (en) | Electric quantity memory element | |
| CA941964A (en) | Electronic memory storage element | |
| AU410082B2 (en) | Electronic memory storage element | |
| CA887865A (en) | Core memory circuit | |
| AU1222170A (en) | Electronic memory storage element | |
| CA925616A (en) | Memory element and configuration | |
| CA824304A (en) | Memory circuit | |
| CA777415A (en) | Electronic memory | |
| AU434026B2 (en) | Read only memory | |
| AU445530B2 (en) | Data memory | |
| AU417729B2 (en) | Memory cell | |
| AU417927B2 (en) | Memory cell | |
| AU1649870A (en) | Read only memory | |
| AU439815B2 (en) | Solid state display circuit with inherent memory | |
| AU2368170A (en) | Data memory | |
| CA778006A (en) | Read only memory | |
| CA981794A (en) | Memory cell circuit |