CA965881A - Method of integrated circuit fabrication - Google Patents

Method of integrated circuit fabrication

Info

Publication number
CA965881A
CA965881A CA173,787A CA173787A CA965881A CA 965881 A CA965881 A CA 965881A CA 173787 A CA173787 A CA 173787A CA 965881 A CA965881 A CA 965881A
Authority
CA
Canada
Prior art keywords
integrated circuit
circuit fabrication
fabrication
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA173,787A
Other languages
English (en)
Inventor
Paul A. Gary
Jorge Agraz-Guerena
Martin P. Lepselter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA965881A publication Critical patent/CA965881A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
CA173,787A 1972-12-01 1973-06-12 Method of integrated circuit fabrication Expired CA965881A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00311289A US3841918A (en) 1972-12-01 1972-12-01 Method of integrated circuit fabrication

Publications (1)

Publication Number Publication Date
CA965881A true CA965881A (en) 1975-04-08

Family

ID=23206239

Family Applications (1)

Application Number Title Priority Date Filing Date
CA173,787A Expired CA965881A (en) 1972-12-01 1973-06-12 Method of integrated circuit fabrication

Country Status (10)

Country Link
US (1) US3841918A (fr)
JP (1) JPS4988483A (fr)
BE (1) BE807963A (fr)
CA (1) CA965881A (fr)
DE (1) DE2359406A1 (fr)
FR (1) FR2209220B1 (fr)
GB (1) GB1452305A (fr)
IT (1) IT1002125B (fr)
NL (1) NL7316151A (fr)
SE (1) SE390234B (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4047217A (en) * 1976-04-12 1977-09-06 Fairchild Camera And Instrument Corporation High-gain, high-voltage transistor for linear integrated circuits
JPS54128683A (en) * 1978-03-27 1979-10-05 Ibm Method of fabricating emitterrbase matching bipolar transistor
JPS5621372A (en) * 1979-07-31 1981-02-27 Fujitsu Ltd Manufacture of semiconductor device
EP0054303B1 (fr) * 1980-12-17 1986-06-11 Matsushita Electric Industrial Co., Ltd. Semiconducteur à circuit intégré
US4472873A (en) 1981-10-22 1984-09-25 Fairchild Camera And Instrument Corporation Method for forming submicron bipolar transistors without epitaxial growth and the resulting structure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1226899A (fr) * 1968-07-17 1971-03-31
US3655457A (en) * 1968-08-06 1972-04-11 Ibm Method of making or modifying a pn-junction by ion implantation
GB1280022A (en) * 1968-08-30 1972-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
JPS4837232B1 (fr) * 1968-12-04 1973-11-09
US3659675A (en) * 1969-06-30 1972-05-02 Transportation Specialists Inc Lubrication system and reservoir therefor
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure

Also Published As

Publication number Publication date
BE807963A (fr) 1974-03-15
JPS4988483A (fr) 1974-08-23
GB1452305A (en) 1976-10-13
DE2359406A1 (de) 1974-06-06
NL7316151A (fr) 1974-06-05
US3841918A (en) 1974-10-15
IT1002125B (it) 1976-05-20
SE390234B (sv) 1976-12-06
FR2209220A1 (fr) 1974-06-28
FR2209220B1 (fr) 1977-09-30

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