CA966040A - Method of forming an epitaxial semiconductor layer with smooth surface - Google Patents

Method of forming an epitaxial semiconductor layer with smooth surface

Info

Publication number
CA966040A
CA966040A CA134,484A CA134484A CA966040A CA 966040 A CA966040 A CA 966040A CA 134484 A CA134484 A CA 134484A CA 966040 A CA966040 A CA 966040A
Authority
CA
Canada
Prior art keywords
forming
semiconductor layer
smooth surface
epitaxial semiconductor
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA134,484A
Other languages
English (en)
Other versions
CA134484S (en
Inventor
Vincent M. Cannuli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA966040A publication Critical patent/CA966040A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
CA134,484A 1971-06-21 1972-02-10 Method of forming an epitaxial semiconductor layer with smooth surface Expired CA966040A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15482471A 1971-06-21 1971-06-21

Publications (1)

Publication Number Publication Date
CA966040A true CA966040A (en) 1975-04-15

Family

ID=22552952

Family Applications (1)

Application Number Title Priority Date Filing Date
CA134,484A Expired CA966040A (en) 1971-06-21 1972-02-10 Method of forming an epitaxial semiconductor layer with smooth surface

Country Status (7)

Country Link
US (1) US3692594A (it)
JP (1) JPS5111914B1 (it)
CA (1) CA966040A (it)
DE (1) DE2213313B2 (it)
FR (1) FR2142919B1 (it)
GB (1) GB1373673A (it)
IT (1) IT950376B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3890194A (en) * 1974-04-11 1975-06-17 Rca Corp Method for depositing on a substrate a plurality of epitaxial layers in succession
US4089713A (en) * 1977-01-06 1978-05-16 Honeywell Inc. Diffusion of donors into (Hg Cd) Te through use of Ga-Al alloy
US9824892B2 (en) * 2011-05-17 2017-11-21 Mcmaster University Semiconductor formation by lateral diffusion liquid phase epitaxy

Also Published As

Publication number Publication date
FR2142919A1 (it) 1973-02-02
DE2213313A1 (de) 1972-12-28
DE2213313B2 (de) 1980-06-26
IT950376B (it) 1973-06-20
FR2142919B1 (it) 1976-10-29
US3692594A (en) 1972-09-19
JPS5111914B1 (it) 1976-04-14
GB1373673A (en) 1974-11-13

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